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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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Electrodes Of Semiconductors
(AREA)
Abstract
A process of CMOS with metal silicide includes: - forming field oxide on a substrate to isolate active area; - on the active area in sequence forming a gate oxide, a polysilicon layer, a metal silicide layer and a mask layer, and by etching defining pattern to form gate electrode; - forming lightly doped source/drain area by first ion implantation; - forming spacer on the gate sidewall; - forming source/drain area by second ion implantation; - forming a metal layer on the active area surface; - after first rapid annealing treatment, cleaning the active area surface to leave metal silicide of source/drain area; - completing the CMOS process by second rapid annealing treatment.
TW83107786A1994-08-241994-08-24Process of complementary metal oxide semiconductor
TW251380B
(en)