TW280008B - - Google Patents
Info
- Publication number
- TW280008B TW280008B TW084110340A TW84110340A TW280008B TW 280008 B TW280008 B TW 280008B TW 084110340 A TW084110340 A TW 084110340A TW 84110340 A TW84110340 A TW 84110340A TW 280008 B TW280008 B TW 280008B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11704694A JP3583467B2 (ja) | 1994-05-30 | 1994-05-30 | 半導体装置の製造装置及び製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW280008B true TW280008B (US20100029827A1-20100204-C00018.png) | 1996-07-01 |
Family
ID=14702093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084110340A TW280008B (US20100029827A1-20100204-C00018.png) | 1994-05-30 | 1995-10-03 |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8636882B2 (en) | 2003-09-19 | 2014-01-28 | Hitachi Kokusai Electric Inc. | Producing method of semiconductor device and substrate processing apparatus |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100328820B1 (ko) * | 1999-02-25 | 2002-03-14 | 박종섭 | 화학기상증착 장비의 가스분사장치 |
| WO2002061179A1 (en) * | 2001-01-19 | 2002-08-08 | Tokyo Electron Limited | Method and apparatus for gas injection system with minimum particulate contamination |
| KR100431657B1 (ko) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
| US6744017B2 (en) * | 2002-05-29 | 2004-06-01 | Ibis Technology Corporation | Wafer heating devices for use in ion implantation systems |
| US7190889B2 (en) * | 2004-05-17 | 2007-03-13 | Neocera, Llc | Non-contact heater and method for non-contact heating of a substrate for material deposition |
| KR100706790B1 (ko) * | 2005-12-01 | 2007-04-12 | 삼성전자주식회사 | 산화 처리 장치 및 방법 |
| US9638466B2 (en) * | 2012-12-28 | 2017-05-02 | Jonathan Y. MELLEN | Furnace system with active cooling system and method |
| JP6368686B2 (ja) * | 2015-06-10 | 2018-08-01 | 東京エレクトロン株式会社 | 熱処理装置、熱処理装置の調整方法、及び、プログラム |
| JP6804309B2 (ja) * | 2017-01-12 | 2020-12-23 | 東京エレクトロン株式会社 | 熱処理装置及び温度制御方法 |
| US10712034B2 (en) * | 2018-03-20 | 2020-07-14 | Johnson Controls Technology Company | Variable frequency drives systems and methods |
| JP7055075B2 (ja) * | 2018-07-20 | 2022-04-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| CN113436996B (zh) * | 2021-06-22 | 2024-07-23 | 北京北方华创微电子装备有限公司 | 用于热处理设备的冷却装置及热处理设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4195820A (en) * | 1978-04-10 | 1980-04-01 | Pyreflex Corporation | Precise thermal processing apparatus |
| JPH0693439B2 (ja) * | 1987-03-20 | 1994-11-16 | 株式会社日立製作所 | 半導体ウエハの熱処理装置 |
| JPS6451619A (en) * | 1987-08-21 | 1989-02-27 | Dainippon Screen Mfg | Heat treatment equipment for substrate |
| FR2620207B1 (fr) * | 1987-09-04 | 1990-01-12 | Physique Appliquee Ind | Four electrique notamment pour traitement thermique |
| KR960012876B1 (ko) * | 1988-06-16 | 1996-09-25 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 열처리 장치 |
| US5207835A (en) * | 1989-02-28 | 1993-05-04 | Moore Epitaxial, Inc. | High capacity epitaxial reactor |
| US5053247A (en) * | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
| JP2998903B2 (ja) * | 1990-11-14 | 2000-01-17 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5249960A (en) * | 1991-06-14 | 1993-10-05 | Tokyo Electron Sagami Kabushiki Kaisha | Forced cooling apparatus for heat treatment apparatus |
| JP2755876B2 (ja) * | 1992-07-30 | 1998-05-25 | 株式会社東芝 | 熱処理成膜装置 |
| US5507639A (en) * | 1993-06-30 | 1996-04-16 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus and method thereof |
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1994
- 1994-05-30 JP JP11704694A patent/JP3583467B2/ja not_active Expired - Fee Related
-
1995
- 1995-05-26 US US08/451,509 patent/US5878191A/en not_active Expired - Fee Related
- 1995-05-30 KR KR1019950013870A patent/KR100231686B1/ko not_active IP Right Cessation
- 1995-10-03 TW TW084110340A patent/TW280008B/zh active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8636882B2 (en) | 2003-09-19 | 2014-01-28 | Hitachi Kokusai Electric Inc. | Producing method of semiconductor device and substrate processing apparatus |
| TWI449104B (zh) * | 2003-09-19 | 2014-08-11 | Hitachi Int Electric Inc | 半導體裝置之製造方法、基板處理裝置及基板處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950034617A (ko) | 1995-12-28 |
| JPH07326592A (ja) | 1995-12-12 |
| KR100231686B1 (ko) | 1999-11-15 |
| US5878191A (en) | 1999-03-02 |
| JP3583467B2 (ja) | 2004-11-04 |
