TW275704B - - Google Patents

Info

Publication number
TW275704B
TW275704B TW084104844A TW84104844A TW275704B TW 275704 B TW275704 B TW 275704B TW 084104844 A TW084104844 A TW 084104844A TW 84104844 A TW84104844 A TW 84104844A TW 275704 B TW275704 B TW 275704B
Authority
TW
Taiwan
Application number
TW084104844A
Other languages
Chinese (zh)
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW275704B publication Critical patent/TW275704B/zh

Links

Classifications

    • H10P50/268
    • H10P50/00
TW084104844A 1994-05-20 1995-05-16 TW275704B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6106447A JP2871460B2 (ja) 1994-05-20 1994-05-20 シリコンのエッチング方法

Publications (1)

Publication Number Publication Date
TW275704B true TW275704B (OSRAM) 1996-05-11

Family

ID=14433877

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084104844A TW275704B (OSRAM) 1994-05-20 1995-05-16

Country Status (4)

Country Link
EP (1) EP0683510A1 (OSRAM)
JP (1) JP2871460B2 (OSRAM)
KR (1) KR950034553A (OSRAM)
TW (1) TW275704B (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239442B1 (ko) * 1996-12-26 2000-01-15 김영환 콘택홀 내의 전도성 플로그 형성방법
KR102109884B1 (ko) * 2018-05-17 2020-05-12 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799991A (en) * 1987-11-02 1989-01-24 Motorola, Inc. Process for preferentially etching polycrystalline silicon
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
JPH0294520A (ja) 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
JPH0779102B2 (ja) 1990-08-23 1995-08-23 富士通株式会社 半導体装置の製造方法
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
EP0512677B1 (en) * 1991-04-04 1999-11-24 Hitachi, Ltd. Plasma treatment method and apparatus

Also Published As

Publication number Publication date
JPH07321092A (ja) 1995-12-08
KR950034553A (ko) 1995-12-28
JP2871460B2 (ja) 1999-03-17
EP0683510A1 (en) 1995-11-22

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