TW275667B - - Google Patents

Info

Publication number
TW275667B
TW275667B TW084100472A TW84100472A TW275667B TW 275667 B TW275667 B TW 275667B TW 084100472 A TW084100472 A TW 084100472A TW 84100472 A TW84100472 A TW 84100472A TW 275667 B TW275667 B TW 275667B
Authority
TW
Taiwan
Application number
TW084100472A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW275667B publication Critical patent/TW275667B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
TW084100472A 1994-07-26 1995-01-20 TW275667B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/280,967 US5528440A (en) 1994-07-26 1994-07-26 Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element

Publications (1)

Publication Number Publication Date
TW275667B true TW275667B (zh) 1996-05-11

Family

ID=23075403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100472A TW275667B (zh) 1994-07-26 1995-01-20

Country Status (9)

Country Link
US (1) US5528440A (zh)
EP (1) EP0694788A3 (zh)
JP (1) JPH0845032A (zh)
KR (1) KR100223390B1 (zh)
CN (1) CN1075651C (zh)
BR (1) BR9502918A (zh)
CA (1) CA2148964A1 (zh)
MY (1) MY113475A (zh)
TW (1) TW275667B (zh)

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JP3629309B2 (ja) * 1995-09-05 2005-03-16 アルプス電気株式会社 薄膜磁気ヘッド
US5764445A (en) * 1995-06-02 1998-06-09 Applied Magnetics Corporation Exchange biased magnetoresistive transducer
DE69619166T2 (de) * 1995-06-15 2002-06-20 Tdk Corp., Tokio/Tokyo Magnetoresistiver Wandler mit "Spin-Valve" Struktur und Herstellungsverfahren
US5896252A (en) * 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
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JP3291208B2 (ja) 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
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JP3255872B2 (ja) 1997-04-17 2002-02-12 アルプス電気株式会社 スピンバルブ型薄膜素子及びその製造方法
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US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
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JP3790356B2 (ja) * 1998-03-19 2006-06-28 富士通株式会社 Ｇｍｒヘッド、ｇｍｒヘッドの製造方法及び磁気ディスク駆動装置
US6117569A (en) * 1998-05-27 2000-09-12 International Business Machines Corporation Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers
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US6023395A (en) * 1998-05-29 2000-02-08 International Business Machines Corporation Magnetic tunnel junction magnetoresistive sensor with in-stack biasing
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JP3959881B2 (ja) 1999-02-08 2007-08-15 Ｔｄｋ株式会社 磁気抵抗効果センサの製造方法
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US6469877B1 (en) 1999-06-15 2002-10-22 Read-Rite Corporation Spin valve device with improved exchange layer defined track width and method of fabrication
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US6266218B1 (en) 1999-10-28 2001-07-24 International Business Machines Corporation Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing
JP2001126219A (ja) * 1999-10-28 2001-05-11 Read Rite Corp スピンバルブ型磁気抵抗センサ及び薄膜磁気ヘッド
US6542341B1 (en) * 1999-11-18 2003-04-01 International Business Machines Corporation Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer
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Also Published As

Publication number Publication date
CN1075651C (zh) 2001-11-28
US5528440A (en) 1996-06-18
KR960005450A (ko) 1996-02-23
EP0694788A2 (en) 1996-01-31
CA2148964A1 (en) 1996-01-27
CN1124866A (zh) 1996-06-19
JPH0845032A (ja) 1996-02-16
BR9502918A (pt) 1996-02-27
KR100223390B1 (ko) 1999-10-15
EP0694788A3 (en) 1996-12-04
MY113475A (en) 2002-03-30

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