TW272339B - - Google Patents

Info

Publication number
TW272339B
TW272339B TW084102955A TW84102955A TW272339B TW 272339 B TW272339 B TW 272339B TW 084102955 A TW084102955 A TW 084102955A TW 84102955 A TW84102955 A TW 84102955A TW 272339 B TW272339 B TW 272339B
Authority
TW
Taiwan
Application number
TW084102955A
Original Assignee
Toshiba Co Ltd
Toshiba Micro Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd, Toshiba Micro Electronics filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW272339B publication Critical patent/TW272339B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H03K5/151Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs
TW084102955A 1994-03-16 1995-03-27 TW272339B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04577894A JP3190199B2 (ja) 1994-03-16 1994-03-16 同相信号出力回路、逆相信号出力回路、二相信号出力回路及び信号出力回路

Publications (1)

Publication Number Publication Date
TW272339B true TW272339B (zh) 1996-03-11

Family

ID=12728759

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102955A TW272339B (zh) 1994-03-16 1995-03-27

Country Status (5)

Country Link
US (1) US5596295A (zh)
EP (1) EP0673116A1 (zh)
JP (1) JP3190199B2 (zh)
KR (1) KR0142985B1 (zh)
TW (1) TW272339B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805123A (en) * 1995-03-16 1998-09-08 Texas Instruments Incorporated Display panel driving circuit having an integrated circuit portion and a high power portion attached to the integrated circuit
JP3851893B2 (ja) * 2003-08-27 2006-11-29 株式会社東芝 半導体集積回路装置
WO2009086200A1 (en) * 2007-12-20 2009-07-09 Trivascular2, Inc. Hinged endovascular device
US9093549B2 (en) 2013-07-02 2015-07-28 Kulicke And Soffa Industries, Inc. Bond heads for thermocompression bonders, thermocompression bonders, and methods of operating the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103188A (en) * 1977-08-22 1978-07-25 Rca Corporation Complementary-symmetry amplifier
DE3274039D1 (en) * 1981-02-25 1986-12-04 Toshiba Kk Complementary mosfet logic circuit
US4498021A (en) * 1982-07-13 1985-02-05 Matsushita Electric Industrial Co., Ltd. Booster for transmitting digital signal
JPH0720060B2 (ja) * 1985-08-14 1995-03-06 株式会社東芝 出力回路装置
JPS62193316A (ja) * 1986-02-19 1987-08-25 Sony Corp 出力回路
US4829199A (en) * 1987-07-13 1989-05-09 Ncr Corporation Driver circuit providing load and time adaptive current
US4950920A (en) * 1987-09-30 1990-08-21 Kabushiki Kaisha Toshiba Complementary signal output circuit with reduced skew
US5293082A (en) * 1988-06-21 1994-03-08 Western Digital Corporation Output driver for reducing transient noise in integrated circuits
US4871928A (en) * 1988-08-23 1989-10-03 Motorola Inc. BICMOS driver circuit with complementary outputs
US4958089A (en) * 1988-12-20 1990-09-18 Gazelle Microcircuits, Inc. High output drive FET buffer for providing high initial current to a subsequent stage
US5063308A (en) * 1988-12-21 1991-11-05 Intel Corporation Output driver with static and transient parts
US4933574A (en) * 1989-01-30 1990-06-12 Integrated Device Technology, Inc. BiCMOS output driver
US5128555A (en) * 1991-03-18 1992-07-07 Motorola, Inc. Pulsed CMOS logic circuit having selectable rise and fall times
KR920022699A (ko) * 1991-05-16 1992-12-19 김광호 지연 보상 회로
DE69411312T2 (de) * 1993-04-19 1999-02-11 Philips Electronics Nv BiCMOS Ausgangstreiberschaltung
US5410189A (en) * 1993-09-27 1995-04-25 Xilinx, Inc. Input buffer having an accelerated signal transition

Also Published As

Publication number Publication date
KR950028313A (ko) 1995-10-18
US5596295A (en) 1997-01-21
JP3190199B2 (ja) 2001-07-23
JPH07254850A (ja) 1995-10-03
EP0673116A1 (en) 1995-09-20
KR0142985B1 (ko) 1998-08-17

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