TW271008B - - Google Patents

Info

Publication number
TW271008B
TW271008B TW083111269A TW83111269A TW271008B TW 271008 B TW271008 B TW 271008B TW 083111269 A TW083111269 A TW 083111269A TW 83111269 A TW83111269 A TW 83111269A TW 271008 B TW271008 B TW 271008B
Authority
TW
Taiwan
Application number
TW083111269A
Other languages
Chinese (zh)
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW271008B publication Critical patent/TW271008B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225Auxiliary circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW083111269A 1993-12-22 1994-12-05 TW271008B (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32482593A JP3279025B2 (ja) 1993-12-22 1993-12-22 半導体メモリ

Publications (1)

Publication Number Publication Date
TW271008B true TW271008B (enrdf_load_html_response) 1996-02-21

Family

ID=18170104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111269A TW271008B (enrdf_load_html_response) 1993-12-22 1994-12-05

Country Status (4)

Country Link
JP (1) JP3279025B2 (enrdf_load_html_response)
KR (1) KR100343646B1 (enrdf_load_html_response)
CN (1) CN1047249C (enrdf_load_html_response)
TW (1) TW271008B (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3622304B2 (ja) * 1995-12-27 2005-02-23 株式会社日立製作所 半導体記憶装置
US5828596A (en) * 1996-09-26 1998-10-27 Sharp Kabushiki Kaisha Semiconductor memory device
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
WO2008105076A1 (ja) * 2007-02-27 2008-09-04 Fujitsu Limited Rfidタグlsiおよびrfidタグ制御方法
WO2016190880A1 (en) * 2015-05-28 2016-12-01 Intel Corporation Ferroelectric based memory cell with non-volatile retention

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
JPH07182872A (ja) 1995-07-21
KR950020705A (ko) 1995-07-24
CN1112716A (zh) 1995-11-29
CN1047249C (zh) 1999-12-08
JP3279025B2 (ja) 2002-04-30
KR100343646B1 (ko) 2002-12-02

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