TW270270B - - Google Patents

Info

Publication number
TW270270B
TW270270B TW083104702A TW83104702A TW270270B TW 270270 B TW270270 B TW 270270B TW 083104702 A TW083104702 A TW 083104702A TW 83104702 A TW83104702 A TW 83104702A TW 270270 B TW270270 B TW 270270B
Authority
TW
Taiwan
Application number
TW083104702A
Other languages
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Horiike Yasuko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP05092304A external-priority patent/JP3081885B2/ja
Priority claimed from JP09230393A external-priority patent/JP3174981B2/ja
Application filed by Tokyo Electron Co Ltd, Horiike Yasuko filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW270270B publication Critical patent/TW270270B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW083104702A 1993-03-26 1994-05-24 TW270270B (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05092304A JP3081885B2 (ja) 1993-03-26 1993-03-26 プラズマ処理装置
JP09230393A JP3174981B2 (ja) 1993-03-26 1993-03-26 ヘリコン波プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW270270B true TW270270B (cg-RX-API-DMAC7.html) 1996-02-11

Family

ID=26433751

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104702A TW270270B (cg-RX-API-DMAC7.html) 1993-03-26 1994-05-24

Country Status (3)

Country Link
US (1) US5487785A (cg-RX-API-DMAC7.html)
KR (1) KR100267959B1 (cg-RX-API-DMAC7.html)
TW (1) TW270270B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8307782B2 (en) 2007-12-26 2012-11-13 Kochi Industrial Promotion Center Deposition apparatus and deposition method

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JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3329128B2 (ja) * 1995-03-28 2002-09-30 ソニー株式会社 半導体装置の製造方法
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US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
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US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
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US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
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US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
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US6203862B1 (en) * 1998-05-13 2001-03-20 Intevac, Inc. Processing systems with dual ion sources
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US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
EP1212787B1 (en) * 1999-08-10 2014-10-08 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
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US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
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US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
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US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
JP5099101B2 (ja) * 2009-01-23 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
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US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
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US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
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US20160097118A1 (en) * 2014-10-01 2016-04-07 Seagate Technology Llc Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
US20170140900A1 (en) * 2015-11-13 2017-05-18 Applied Materials, Inc. Uniform low electron temperature plasma source with reduced wafer charging and independent control over radical composition
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TWI872423B (zh) 2017-11-17 2025-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
JP7235761B2 (ja) 2017-11-17 2023-03-08 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8307782B2 (en) 2007-12-26 2012-11-13 Kochi Industrial Promotion Center Deposition apparatus and deposition method

Also Published As

Publication number Publication date
US5487785A (en) 1996-01-30
KR100267959B1 (ko) 2000-11-01
KR940022720A (ko) 1994-10-21

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