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Application filed by Winbond Electronics CorpfiledCriticalWinbond Electronics Corp
Priority to TW84104214ApriorityCriticalpatent/TW266320B/en
Application grantedgrantedCritical
Publication of TW266320BpublicationCriticalpatent/TW266320B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A new process of CMOS wafer comprises the steps of: coating mask-1 on semiconductor wafer for defining contact window of heavily doped area-1 on the semiconductor wafer; etching the semiconductor wafer; implanting ion-1; removing mask-1; coating mask-2 on semiconductor wafer for defining heavily doped area-2 and polysilicon contact window on the semiconductor wafer; etching the semiconductor wafer; implanting ion-2; removing mask-2.
TW84104214A1995-04-281995-04-28Process for CMOS wafer
TW266320B
(en)