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A fabrication method of SRAM polysilicon load resistor comprises the steps of: forming field oxide layer necessary for separating active area; forming MOS transistor; depositing polysilicon layer and performing load resistor ion implantation; depositing SiO2 layer and defining load resistor photoresist pattern; by reactive ion etching anisotropically etching SiO2 layer and removing photoresist; depositing Ti metal thin film layer; performing metal silicidation; removing Ti metal thin film on SiO2 layer surface; defining metal silicide pattern as interconnection.
TW82111167A1993-12-271993-12-27Fabrication method of SRAM polysilicon load resistor
TW278243B
(en)