TW264568B - - Google Patents

Info

Publication number
TW264568B
TW264568B TW083104823A TW83104823A TW264568B TW 264568 B TW264568 B TW 264568B TW 083104823 A TW083104823 A TW 083104823A TW 83104823 A TW83104823 A TW 83104823A TW 264568 B TW264568 B TW 264568B
Authority
TW
Taiwan
Application number
TW083104823A
Original Assignee
Mitsubishi Electric Machine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Machine filed Critical Mitsubishi Electric Machine
Application granted granted Critical
Publication of TW264568B publication Critical patent/TW264568B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
TW083104823A 1993-10-29 1994-05-27 TW264568B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27203193A JP3285438B2 (ja) 1993-10-29 1993-10-29 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW264568B true TW264568B (zh) 1995-12-01

Family

ID=17508168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104823A TW264568B (zh) 1993-10-29 1994-05-27

Country Status (5)

Country Link
US (1) US5486717A (zh)
JP (1) JP3285438B2 (zh)
KR (1) KR0174766B1 (zh)
DE (1) DE4437960C2 (zh)
TW (1) TW264568B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5703392A (en) * 1995-06-02 1997-12-30 Utron Technology Inc Minimum size integrated circuit static memory cell
JP3428240B2 (ja) * 1995-07-31 2003-07-22 三菱電機株式会社 半導体記憶装置
KR100215851B1 (ko) * 1995-12-26 1999-08-16 구본준 반도체 소자의 구조
RU2156013C2 (ru) * 1996-03-28 2000-09-10 Интел Корпорейшн Конструкция ячейки памяти с вертикально расположенными друг над другом пересечениями
US5705437A (en) * 1996-09-25 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Trench free process for SRAM
KR19980077674A (ko) * 1997-04-22 1998-11-16 김영환 에스램 반도체 장치
JPH1126604A (ja) * 1997-07-03 1999-01-29 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6104045A (en) * 1998-05-13 2000-08-15 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
US6128216A (en) * 1998-05-13 2000-10-03 Micron Technology Inc. High density planar SRAM cell with merged transistors
US6545297B1 (en) 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
DE69911641T2 (de) * 1998-11-27 2004-08-05 Synaptics (Uk) Ltd., Harston Positionssensor
US6472767B1 (en) * 1999-04-30 2002-10-29 Infineon Technologies Ag Static random access memory (SRAM)
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6366493B1 (en) * 2000-10-24 2002-04-02 United Microelectronics Corp. Four transistors static-random-access-memory cell
JP3656592B2 (ja) * 2001-03-26 2005-06-08 セイコーエプソン株式会社 半導体装置、メモリシステムおよび電子機器
US20050198361A1 (en) * 2003-12-29 2005-09-08 Chandra Prashant R. Method and apparatus for meeting a given content throughput using at least one memory channel
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
SG192532A1 (en) 2008-07-16 2013-08-30 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
KR20140049356A (ko) 2012-10-17 2014-04-25 삼성전자주식회사 반도체 소자
US9620509B1 (en) * 2015-10-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Static random access memory device with vertical FET devices
US11348640B1 (en) * 2021-04-05 2022-05-31 Micron Technology, Inc. Charge screening structure for spike current suppression in a memory array
US11715520B2 (en) 2021-04-05 2023-08-01 Micron Technology, Inc. Socket structure for spike current suppression in a memory array
US11862215B2 (en) 2021-08-27 2024-01-02 Micron Technology, Inc. Access line having a resistive layer for memory cell access

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
JPH0373146A (ja) * 1989-08-12 1991-03-28 Matsushita Electric Works Ltd 電動車椅子
JP2769011B2 (ja) * 1990-02-09 1998-06-25 株式会社日立製作所 半導体集積回路装置
JP2749687B2 (ja) * 1990-02-09 1998-05-13 株式会社日立製作所 半導体集積回路装置及びその製造方法
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
KR970001346B1 (ko) * 1992-10-12 1997-02-05 삼성전자 주식회사 반도체 메모리장치 및 그 제조방법

Also Published As

Publication number Publication date
KR0174766B1 (ko) 1999-02-01
US5486717A (en) 1996-01-23
JPH07130879A (ja) 1995-05-19
DE4437960A1 (de) 1995-05-04
DE4437960C2 (de) 2002-03-21
JP3285438B2 (ja) 2002-05-27
KR950012576A (ko) 1995-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees