TW264567B - - Google Patents

Info

Publication number
TW264567B
TW264567B TW084100765A TW84100765A TW264567B TW 264567 B TW264567 B TW 264567B TW 084100765 A TW084100765 A TW 084100765A TW 84100765 A TW84100765 A TW 84100765A TW 264567 B TW264567 B TW 264567B
Authority
TW
Taiwan
Application number
TW084100765A
Other languages
Chinese (zh)
Original Assignee
Samsung Electronic Devices
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronic Devices filed Critical Samsung Electronic Devices
Application granted granted Critical
Publication of TW264567B publication Critical patent/TW264567B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW084100765A 1994-02-28 1995-01-27 TW264567B (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940003969A KR950026000A (ko) 1994-02-28 1994-02-28 반도체 메모리장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
TW264567B true TW264567B (cs) 1995-12-01

Family

ID=19378194

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100765A TW264567B (cs) 1994-02-28 1995-01-27

Country Status (4)

Country Link
JP (1) JPH07263649A (cs)
KR (1) KR950026000A (cs)
DE (1) DE19504994A1 (cs)
TW (1) TW264567B (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815762B2 (en) 1997-05-30 2004-11-09 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines
JPH1032316A (ja) * 1996-07-16 1998-02-03 Nec Corp 半導体記憶装置及びその製造方法
JPH1070252A (ja) * 1996-08-27 1998-03-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6588005B1 (en) * 1998-12-11 2003-07-01 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
KR100564422B1 (ko) * 1999-04-22 2006-03-28 주식회사 하이닉스반도체 Mml반도체소자의 디커플링 커패시터 및 그 형성방법

Also Published As

Publication number Publication date
JPH07263649A (ja) 1995-10-13
DE19504994A1 (de) 1995-08-31
KR950026000A (ko) 1995-09-18

Similar Documents

Publication Publication Date Title
DK105996A (cs)
DK0677466T3 (cs)
IN183464B (cs)
TW281813B (cs)
TW264578B (cs)
TW258684B (cs)
DE69535748D1 (cs)
EP0667627A3 (cs)
FR2724253B1 (cs)
DK0685247T3 (cs)
TW257713B (cs)
IN189136B (cs)
FR2727663B1 (cs)
FR2722008B1 (cs)
IN180159B (cs)
IN184206B (cs)
ECSMU940030U (cs)
ECSDI940187S (cs)
ITMI942200A0 (cs)
BR7402097U (cs)
ECSDI940185S (cs)
IN182165B (cs)
CU22450A3 (cs)
ECSDI940184S (cs)
ECSDI940182S (cs)