TW257879B - - Google Patents

Info

Publication number
TW257879B
TW257879B TW083111655A TW83111655A TW257879B TW 257879 B TW257879 B TW 257879B TW 083111655 A TW083111655 A TW 083111655A TW 83111655 A TW83111655 A TW 83111655A TW 257879 B TW257879 B TW 257879B
Authority
TW
Taiwan
Application number
TW083111655A
Other languages
Chinese (zh)
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Application granted granted Critical
Publication of TW257879B publication Critical patent/TW257879B/zh

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW083111655A 1994-01-07 1994-12-14 TW257879B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00046194A JP3395318B2 (ja) 1994-01-07 1994-01-07 ３−５族化合物半導体結晶の成長方法

Publications (1)

Publication Number Publication Date
TW257879B true TW257879B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-09-21

Family

ID=11474441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111655A TW257879B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-01-07 1994-12-14

Country Status (8)

Country Link
US (1) US5603764A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0662532B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3395318B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100345583B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2139551C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69508801T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SG (1) SG43823A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW257879B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2004503920A (ja) * 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
AU2001264987A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc., A Corporation Of The State Of Delware Hybrid semiconductor structure and device
AU2001277001A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
US20090114274A1 (en) * 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
US8415187B2 (en) * 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
JP6055290B2 (ja) * 2012-11-26 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法
JP6055325B2 (ja) * 2013-01-30 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法

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Publication number Priority date Publication date Assignee Title
GB2055774B (en) * 1979-04-09 1983-02-02 Plessey Co Ltd Methods of producing semiconductor materials
EP0106537B1 (en) * 1982-10-19 1989-01-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Organometallic chemical vapour deposition of films
US4717597A (en) * 1986-03-21 1988-01-05 Motorola Inc. Method for providing impurities into a carrier gas line
JPH01179411A (ja) * 1988-01-08 1989-07-17 Nec Corp ３−５族化合物半導体気相成長方法
JPH01220432A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 化合物半導体層の製造方法
JPH0243365A (ja) * 1988-08-03 1990-02-13 Nippon Mining Co Ltd 気相成長用有機金属組成物及び気相成長方法
JP2781209B2 (ja) * 1989-06-20 1998-07-30 富士通株式会社 化合物半導体混晶の製造方法
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
US5480833A (en) * 1991-02-19 1996-01-02 Fujitsu Limited Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof
JP3347175B2 (ja) * 1993-03-19 2002-11-20 富士通株式会社 半導体装置とその製造方法
JP3022519U (ja) 1995-09-08 1996-03-26 株式会社ホクエツ マンホール用インバートブロック

Also Published As

Publication number Publication date
KR100345583B1 (ko) 2002-11-23
US5603764A (en) 1997-02-18
KR950034502A (ko) 1995-12-28
JP3395318B2 (ja) 2003-04-14
DE69508801D1 (de) 1999-05-12
DE69508801T2 (de) 1999-08-26
EP0662532B1 (en) 1999-04-07
CA2139551C (en) 2004-12-07
EP0662532A1 (en) 1995-07-12
CA2139551A1 (en) 1995-07-08
JPH07201737A (ja) 1995-08-04
SG43823A1 (en) 1997-11-14

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