TW256939B - - Google Patents
Info
- Publication number
- TW256939B TW256939B TW082108897A TW82108897A TW256939B TW 256939 B TW256939 B TW 256939B TW 082108897 A TW082108897 A TW 082108897A TW 82108897 A TW82108897 A TW 82108897A TW 256939 B TW256939 B TW 256939B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29352692A JP2887032B2 (ja) | 1992-10-30 | 1992-10-30 | 薄膜トランジスタ回路およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW256939B true TW256939B (enrdf_load_stackoverflow) | 1995-09-11 |
Family
ID=17795887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082108897A TW256939B (enrdf_load_stackoverflow) | 1992-10-30 | 1993-10-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5471070A (enrdf_load_stackoverflow) |
| EP (1) | EP0595648B1 (enrdf_load_stackoverflow) |
| JP (1) | JP2887032B2 (enrdf_load_stackoverflow) |
| KR (1) | KR970009850B1 (enrdf_load_stackoverflow) |
| DE (1) | DE69322604T2 (enrdf_load_stackoverflow) |
| TW (1) | TW256939B (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| US5637519A (en) * | 1996-03-21 | 1997-06-10 | Industrial Technology Research Institute | Method of fabricating a lightly doped drain thin-film transistor |
| JPH1020331A (ja) * | 1996-06-28 | 1998-01-23 | Sharp Corp | 液晶表示装置 |
| US5870330A (en) | 1996-12-27 | 1999-02-09 | Stmicroelectronics, Inc. | Method of making and structure of SRAM storage cell with N channel thin film transistor load devices |
| US6235586B1 (en) | 1999-07-13 | 2001-05-22 | Advanced Micro Devices, Inc. | Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications |
| US20040004251A1 (en) * | 2002-07-08 | 2004-01-08 | Madurawe Raminda U. | Insulated-gate field-effect thin film transistors |
| EP2202802B1 (en) * | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR101791713B1 (ko) * | 2010-02-05 | 2017-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치 |
| CN103098376B (zh) * | 2010-09-02 | 2016-06-22 | 夏普株式会社 | 晶体管电路、触发器、信号处理电路、驱动电路以及显示装置 |
| KR20220161602A (ko) | 2021-05-27 | 2022-12-07 | 삼성디스플레이 주식회사 | 스캔 드라이버 및 표시 장치 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232456A (ja) * | 1983-06-16 | 1984-12-27 | Hitachi Ltd | 薄膜回路素子 |
| JPS60182169A (ja) * | 1984-02-29 | 1985-09-17 | Fujitsu Ltd | アモルフアスシリコンインバ−タ |
| JPS60182168A (ja) * | 1984-02-29 | 1985-09-17 | Fujitsu Ltd | アモルフアスシリコンインバ−タの製造方法 |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| JPS6113665A (ja) * | 1984-06-29 | 1986-01-21 | Fujitsu Ltd | シフトレジスタ集積回路 |
| JPS61234623A (ja) * | 1985-04-10 | 1986-10-18 | Nec Ic Microcomput Syst Ltd | Ｎａｎｄ−ｎｏｒ論理変換回路 |
| JPS6240823A (ja) * | 1985-08-19 | 1987-02-21 | Fujitsu Ltd | 論理回路 |
| SU1411934A1 (ru) * | 1986-07-09 | 1988-07-23 | Ленинградский электротехнический институт им.В.И.Ульянова (Ленина) | Г-триггер |
| JPH01287958A (ja) * | 1988-05-13 | 1989-11-20 | Fujitsu Ltd | 半導体記憶装置 |
| WO1991011027A1 (en) * | 1990-01-16 | 1991-07-25 | Iowa State University Research Foundation, Inc. | Non-crystalline silicon active device for large-scale digital and analog networks |
| JP2881894B2 (ja) * | 1990-01-22 | 1999-04-12 | ソニー株式会社 | 抵抗体 |
| JP2959077B2 (ja) * | 1990-08-18 | 1999-10-06 | セイコーエプソン株式会社 | 半導体装置 |
| JPH04207416A (ja) * | 1990-11-30 | 1992-07-29 | Casio Comput Co Ltd | 薄膜トランジスタによる論理回路 |
-
1992
- 1992-10-30 JP JP29352692A patent/JP2887032B2/ja not_active Expired - Lifetime
-
1993
- 1993-10-26 TW TW082108897A patent/TW256939B/zh not_active IP Right Cessation
- 1993-10-28 KR KR1019930022659A patent/KR970009850B1/ko not_active Expired - Lifetime
- 1993-10-29 DE DE69322604T patent/DE69322604T2/de not_active Expired - Lifetime
- 1993-10-29 EP EP93308655A patent/EP0595648B1/en not_active Expired - Lifetime
-
1995
- 1995-02-13 US US08/387,361 patent/US5471070A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69322604T2 (de) | 1999-06-17 |
| JPH06151848A (ja) | 1994-05-31 |
| DE69322604D1 (de) | 1999-01-28 |
| EP0595648A1 (en) | 1994-05-04 |
| EP0595648B1 (en) | 1998-12-16 |
| KR970009850B1 (ko) | 1997-06-18 |
| KR940010389A (ko) | 1994-05-26 |
| US5471070A (en) | 1995-11-28 |
| JP2887032B2 (ja) | 1999-04-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |