TW252210B - - Google Patents

Info

Publication number
TW252210B
TW252210B TW082107852A TW82107852A TW252210B TW 252210 B TW252210 B TW 252210B TW 082107852 A TW082107852 A TW 082107852A TW 82107852 A TW82107852 A TW 82107852A TW 252210 B TW252210 B TW 252210B
Authority
TW
Taiwan
Application number
TW082107852A
Original Assignee
Gold Star Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Electronics filed Critical Gold Star Electronics
Application granted granted Critical
Publication of TW252210B publication Critical patent/TW252210B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
TW082107852A 1991-05-15 1993-09-23 TW252210B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007882A KR920022553A (ko) 1991-05-15 1991-05-15 Ldd 소자의 구조 및 제조방법

Publications (1)

Publication Number Publication Date
TW252210B true TW252210B (zh) 1995-07-21

Family

ID=19314488

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082107852A TW252210B (zh) 1991-05-15 1993-09-23

Country Status (5)

Country Link
US (1) US5904530A (zh)
JP (1) JPH06204469A (zh)
KR (1) KR920022553A (zh)
DE (1) DE4208537C2 (zh)
TW (1) TW252210B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125726B2 (ja) * 1997-08-26 2001-01-22 日本電気株式会社 半導体装置の製造方法
JP2000049344A (ja) * 1998-07-31 2000-02-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6180468B1 (en) * 1998-10-23 2001-01-30 Advanced Micro Devices Inc. Very low thermal budget channel implant process for semiconductors
US6200869B1 (en) 1998-11-06 2001-03-13 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit with ultra-shallow source/drain extensions
US6225173B1 (en) * 1998-11-06 2001-05-01 Advanced Micro Devices, Inc. Recessed channel structure for manufacturing shallow source/drain extensions
FR2788629B1 (fr) * 1999-01-15 2003-06-20 Commissariat Energie Atomique Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur
JP2000332236A (ja) * 1999-05-18 2000-11-30 Univ Hiroshima 微細化に適した新しい高性能ｍｏｓｆｅｔ
US6355528B1 (en) * 1999-08-11 2002-03-12 Advanced Micro Devices, Inc. Method to form narrow structure using double-damascene process
DE19957540B4 (de) * 1999-11-30 2005-07-07 Infineon Technologies Ag Verfahren zum Herstellen eines Feldeffekttransistors mit Anti-Punch-Through-Implantationsgebiet
US6541829B2 (en) * 1999-12-03 2003-04-01 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6333244B1 (en) 2000-01-26 2001-12-25 Advanced Micro Devices, Inc. CMOS fabrication process with differential rapid thermal anneal scheme
US6420218B1 (en) 2000-04-24 2002-07-16 Advanced Micro Devices, Inc. Ultra-thin-body SOI MOS transistors having recessed source and drain regions
US6361874B1 (en) 2000-06-20 2002-03-26 Advanced Micro Devices, Inc. Dual amorphization process optimized to reduce gate line over-melt
US6368947B1 (en) 2000-06-20 2002-04-09 Advanced Micro Devices, Inc. Process utilizing a cap layer optimized to reduce gate line over-melt
US6630386B1 (en) 2000-07-18 2003-10-07 Advanced Micro Devices, Inc CMOS manufacturing process with self-amorphized source/drain junctions and extensions
US6521502B1 (en) 2000-08-07 2003-02-18 Advanced Micro Devices, Inc. Solid phase epitaxy activation process for source/drain junction extensions and halo regions
KR100378183B1 (ko) 2000-09-18 2003-03-29 삼성전자주식회사 반도체 메모리 장치 및 그의 제조 방법
KR100436673B1 (ko) * 2001-05-28 2004-07-02 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
JP2007088488A (ja) * 2006-10-18 2007-04-05 Renesas Technology Corp 電界効果トランジスタ及びその製造方法
US9117687B2 (en) * 2011-10-28 2015-08-25 Texas Instruments Incorporated High voltage CMOS with triple gate oxide
US9117691B2 (en) * 2012-12-28 2015-08-25 Texas Instruments Incorporated Low cost transistors
CN105633156A (zh) * 2015-02-09 2016-06-01 中国科学院微电子研究所 半导体器件及其制造方法
CN111092120A (zh) * 2018-10-24 2020-05-01 长鑫存储技术有限公司 场效应管器件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256769A (ja) * 1985-05-10 1986-11-14 Toshiba Corp 半導体装置
JPS63129664A (ja) * 1986-11-20 1988-06-02 Toshiba Corp 半導体装置の製造方法
JPS63241965A (ja) * 1987-03-30 1988-10-07 Toshiba Corp 絶縁ゲ−ト型電界効果トランジスタおよびその製造方法
FR2625044B1 (fr) * 1987-12-18 1990-08-31 Commissariat Energie Atomique Transistor mos a extremite d'interface dielectrique de grille/substrat relevee et procede de fabrication de ce transistor
JPH0290567A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 半導体装置とその製造方法
JPH02174168A (ja) * 1988-12-26 1990-07-05 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ電界型トランジスタ
US5082794A (en) * 1989-02-13 1992-01-21 Motorola, Inc. Method of fabricating mos transistors using selective polysilicon deposition
US5073512A (en) * 1989-04-21 1991-12-17 Nec Corporation Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region
JPH036863A (ja) * 1989-06-05 1991-01-14 Takehide Shirato 半導体装置

Also Published As

Publication number Publication date
US5904530A (en) 1999-05-18
JPH06204469A (ja) 1994-07-22
DE4208537A1 (de) 1992-11-19
KR920022553A (ko) 1992-12-19
DE4208537C2 (de) 1997-04-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees