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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83105556ApriorityCriticalpatent/TW245822B/en
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Publication of TW245822BpublicationCriticalpatent/TW245822B/en
A process for device isolation of IC includes the following steps: 1. forming one pad oxide on the Si substrate surface; 2. forming the first masking layer on the pad oxide surface; 3. etching the first masking layer and the part of pad oxide uncovered by mask to form opening, exposing the area of Si substrate to be formed as device isolation; 4. etching the exposed part of Si substrate to form trench; 5. forming one second masking layer on the sidewall of those trenches, forming one thin oxide on the bottom of those trenches; 6. depositing one field oxide by liquid-phase deposition to fill up the trench; 7. removing the first and second masking layer and the pad oxide, forming gap between those trenches and those field oxides; 8. thermal treating to densify the field oxide; 9. depositing one dielectric layer to fill up those gaps, finishing the device isolation of IC.
TW83105556A1994-06-201994-06-20Process for device isolation of IC
TW245822B
(en)