TW241376B - Planarization process with increasing etching ratio - Google Patents

Planarization process with increasing etching ratio

Info

Publication number
TW241376B
TW241376B TW82110426A TW82110426A TW241376B TW 241376 B TW241376 B TW 241376B TW 82110426 A TW82110426 A TW 82110426A TW 82110426 A TW82110426 A TW 82110426A TW 241376 B TW241376 B TW 241376B
Authority
TW
Taiwan
Prior art keywords
oxide layer
planarization process
etching
doping
etching ratio
Prior art date
Application number
TW82110426A
Other languages
Chinese (zh)
Inventor
Ming-Tzong Yang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW82110426A priority Critical patent/TW241376B/en
Application granted granted Critical
Publication of TW241376B publication Critical patent/TW241376B/en

Links

Abstract

A planarization process with increasing etching ratio includes: 1. depositing oxide layer with high thickness on the uneven layer on the substrate; 2. overlaying one thin spin-on-glass on the oxide layer with high thickness; 3. implementing ion implantation, and doping the upper section of oxide layer; 4. wet selective etching back; By the above ion implantation the extruding parts of oxide layer upper section becomes with high etching rate features by doping in order to conduct wet selective etching back to constitue planarization by even etching sweepingly.
TW82110426A 1993-12-09 1993-12-09 Planarization process with increasing etching ratio TW241376B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW82110426A TW241376B (en) 1993-12-09 1993-12-09 Planarization process with increasing etching ratio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW82110426A TW241376B (en) 1993-12-09 1993-12-09 Planarization process with increasing etching ratio

Publications (1)

Publication Number Publication Date
TW241376B true TW241376B (en) 1995-02-21

Family

ID=51400917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW82110426A TW241376B (en) 1993-12-09 1993-12-09 Planarization process with increasing etching ratio

Country Status (1)

Country Link
TW (1) TW241376B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19837395A1 (en) * 1998-08-18 2000-03-02 Siemens Ag Method for producing a semiconductor insulation layer and a semiconductor component containing this semiconductor insulation layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19837395A1 (en) * 1998-08-18 2000-03-02 Siemens Ag Method for producing a semiconductor insulation layer and a semiconductor component containing this semiconductor insulation layer
US6207517B1 (en) 1998-08-18 2001-03-27 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer and a semiconductor component containing the semiconductor insulation layer
DE19837395C2 (en) * 1998-08-18 2001-07-19 Infineon Technologies Ag Method for producing a semiconductor component containing a structured insulation layer
US6365525B2 (en) 1998-08-18 2002-04-02 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer

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