TW326573B - Fabrication method of SRAM and its polysilicon loading resistance - Google Patents

Fabrication method of SRAM and its polysilicon loading resistance

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Publication number
TW326573B
TW326573B TW085111431A TW85111431A TW326573B TW 326573 B TW326573 B TW 326573B TW 085111431 A TW085111431 A TW 085111431A TW 85111431 A TW85111431 A TW 85111431A TW 326573 B TW326573 B TW 326573B
Authority
TW
Taiwan
Prior art keywords
driver
inter
poly
supply voltage
layer
Prior art date
Application number
TW085111431A
Other languages
Chinese (zh)
Inventor
Gwo-Haur Rau
Yeong-Shuenn Chen
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW085111431A priority Critical patent/TW326573B/en
Application granted granted Critical
Publication of TW326573B publication Critical patent/TW326573B/en

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Abstract

A fabrication method of SRAM and its polysilicon loading resistance includes the following steps: a. forming a MOS driver on the substrate, depositing a inter-poly-dielectric layer on the MOS driver and defining a pattern on the above layer to form one or plural holes. b. depositing a thick polysilicon layer on the inter-poly-dielectric layer c. using the first ion implanting to uniformly dope the thick polysilicon layer d. defining the polysilicon layer to be a driver coupling area which is connected to the driver and the supply voltage coupling through the holes on the inter-poly-dielectric layer. e. depositing a thin polysilicon layer on the driver, the supply voltage coupling area, and the part of the inter-poly-dielectric layer between the driver and the supply voltage coupling area. f. Using the second ion implanting on the thin polysilicon layer to form a loading resistance area which is conncted to the driver coupling and the supply voltage coupling.
TW085111431A 1996-09-18 1996-09-18 Fabrication method of SRAM and its polysilicon loading resistance TW326573B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085111431A TW326573B (en) 1996-09-18 1996-09-18 Fabrication method of SRAM and its polysilicon loading resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085111431A TW326573B (en) 1996-09-18 1996-09-18 Fabrication method of SRAM and its polysilicon loading resistance

Publications (1)

Publication Number Publication Date
TW326573B true TW326573B (en) 1998-02-11

Family

ID=58262287

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111431A TW326573B (en) 1996-09-18 1996-09-18 Fabrication method of SRAM and its polysilicon loading resistance

Country Status (1)

Country Link
TW (1) TW326573B (en)

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MM4A Annulment or lapse of patent due to non-payment of fees