TW239888B - - Google Patents

Info

Publication number
TW239888B
TW239888B TW082105369A TW82105369A TW239888B TW 239888 B TW239888 B TW 239888B TW 082105369 A TW082105369 A TW 082105369A TW 82105369 A TW82105369 A TW 82105369A TW 239888 B TW239888 B TW 239888B
Authority
TW
Taiwan
Application number
TW082105369A
Other languages
Chinese (zh)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW239888B publication Critical patent/TW239888B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
TW082105369A 1992-08-28 1993-07-06 TW239888B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93762092A 1992-08-28 1992-08-28

Publications (1)

Publication Number Publication Date
TW239888B true TW239888B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-02-01

Family

ID=25470170

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082105369A TW239888B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-08-28 1993-07-06

Country Status (9)

Country Link
US (1) US5574605A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0585009B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2725977B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR0128269B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1043935C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69317178T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY136486A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SG (1) SG44357A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW239888B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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TW342136U (en) * 1993-12-14 1998-10-01 Ibm Thin film magnetic transducer having a stable soft film for reducing asymmetry variations
US5668523A (en) * 1993-12-29 1997-09-16 International Business Machines Corporation Magnetoresistive sensor employing an exchange-bias enhancing layer
US5546253A (en) * 1994-05-06 1996-08-13 Quantum Corporation Digitial output magnetoresistive (DOMR) head and methods associated therewith
US5898546A (en) * 1994-09-08 1999-04-27 Fujitsu Limited Magnetoresistive head and magnetic recording apparatus
US5991125A (en) * 1994-09-16 1999-11-23 Kabushiki Kaisha Toshiba Magnetic head
JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜
US5796560A (en) * 1995-03-13 1998-08-18 Kabushiki Kaisha Toshiba Magnetoresistive head
JP3629309B2 (ja) * 1995-09-05 2005-03-16 アルプス電気株式会社 薄膜磁気ヘッド
US5764445A (en) * 1995-06-02 1998-06-09 Applied Magnetics Corporation Exchange biased magnetoresistive transducer
JP3651619B2 (ja) * 1995-06-29 2005-05-25 富士通株式会社 磁気抵抗効果型トランスデューサ及び磁気記録装置
US5768067A (en) 1995-09-19 1998-06-16 Alps Electric Co., Ltd. Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer
EP0768641A1 (en) * 1995-10-09 1997-04-16 TDK Corporation Manufacturing method of magnetic head apparatus with spin valve effect magnetoresistive head
US5843589A (en) * 1995-12-21 1998-12-01 Hitachi, Ltd. Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon
US6087027A (en) * 1995-12-21 2000-07-11 Hitachi, Ltd. Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon
JPH09205234A (ja) * 1996-01-26 1997-08-05 Nec Corp 磁気抵抗効果素子及び磁気抵抗効果センサ
JPH09274710A (ja) * 1996-04-04 1997-10-21 Fujitsu Ltd スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録装置
US5739988A (en) * 1996-09-18 1998-04-14 International Business Machines Corporation Spin valve sensor with enhanced magnetoresistance
JP3291208B2 (ja) 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
JP3255872B2 (ja) * 1997-04-17 2002-02-12 アルプス電気株式会社 スピンバルブ型薄膜素子及びその製造方法
US6166891A (en) * 1997-06-30 2000-12-26 Read-Rite Corporation Magnetoresistive sensor for high temperature environment using iridium manganese
US6025979A (en) * 1997-09-04 2000-02-15 Oki Electric Industry Co., Ltd. Magnetoresistive sensor and head with alternating magnetic bias field
JP3833362B2 (ja) * 1997-10-01 2006-10-11 富士通株式会社 磁気抵抗効果型ヘッド
JPH11296823A (ja) 1998-04-09 1999-10-29 Nec Corp 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ，磁気記録システム
US6127053A (en) * 1998-05-27 2000-10-03 International Business Machines Corporation Spin valves with high uniaxial anisotropy reference and keeper layers
US6117569A (en) * 1998-05-27 2000-09-12 International Business Machines Corporation Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers
US6351355B1 (en) * 1999-02-09 2002-02-26 Read-Rite Corporation Spin valve device with improved thermal stability
US6219208B1 (en) 1999-06-25 2001-04-17 International Business Machines Corporation Dual spin valve sensor with self-pinned layer specular reflector
US7196880B1 (en) 1999-07-19 2007-03-27 Western Digital (Fremont), Inc. Spin valve sensor having a nonmagnetic enhancement layer adjacent an ultra thin free layer
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
US6560077B2 (en) 2000-01-10 2003-05-06 The University Of Alabama CPP spin-valve device
US6649254B1 (en) 2000-02-04 2003-11-18 Seagate Technology Llc Compensated crystalline superlattice ferrimagnets
US6583969B1 (en) 2000-04-12 2003-06-24 International Business Machines Corporation Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensor
JP2001358381A (ja) * 2000-06-14 2001-12-26 Fujitsu Ltd 磁気抵抗効果膜、磁気抵抗効果型ヘッド、および情報再生装置
JP2002050011A (ja) * 2000-08-03 2002-02-15 Nec Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム
JP2002117508A (ja) 2000-10-06 2002-04-19 Hitachi Ltd 磁気ヘッドおよびその製造方法
US6885527B1 (en) * 2000-10-26 2005-04-26 Headway Technologies, Inc. Process to manufacture a top spin valve
KR100427183B1 (ko) * 2000-12-16 2004-04-17 한국전기연구원 고감도 자기 저항 소자 및 그 제조 방법
US7050274B2 (en) * 2001-03-15 2006-05-23 Seagate Technology Llc Multilayer permanent magnet films
TW560095B (en) * 2001-04-02 2003-11-01 Canon Kk Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
US6624985B1 (en) * 2002-01-07 2003-09-23 International Business Machines Corporation Pinning layer seeds for CPP geometry spin valve sensors
JP2004133982A (ja) * 2002-10-09 2004-04-30 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびヘッドスライダ
KR100733782B1 (ko) * 2005-01-19 2007-07-02 고려대학교 산학협력단 ＣｏＦｅＺｒ을 포함하는 거대 자기 저항 소자의 제조 방법
DE102005043574A1 (de) * 2005-03-30 2006-10-05 Universität Duisburg-Essen Magnetoresistives Element, insbesondere Speicherelement oder Lokikelement, und Verfahren zum Schreiben von Informationen in ein derartiges Element
US7423849B2 (en) * 2005-09-19 2008-09-09 Hitachi Global Sotrage Technologies Netherlands B.V. Magnetoresistive (MR) elements having pinned layers with canted magnetic moments
US7926176B2 (en) * 2005-10-19 2011-04-19 General Electric Company Methods for magnetically directed self assembly
US20070231826A1 (en) * 2005-10-19 2007-10-04 General Electric Company Article and assembly for magnetically directed self assembly
US8022416B2 (en) * 2005-10-19 2011-09-20 General Electric Company Functional blocks for assembly
FR2918761B1 (fr) * 2007-07-10 2009-11-06 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit.
US8674212B2 (en) * 2008-01-15 2014-03-18 General Electric Company Solar cell and magnetically self-assembled solar cell assembly
US9574906B2 (en) 2013-10-28 2017-02-21 Hitachi Metals, Ltd. Magnetic medium for magnetic encoder, magnetic encoder and method for manufacturing magnetic medium
US9947347B1 (en) * 2016-12-20 2018-04-17 Western Digital Technologies, Inc. Magnetic sensor using inverse spin hall effect
CN113884956B (zh) * 2020-07-02 2024-01-19 华润微电子控股有限公司 锑-铟系化合物半导体磁阻连续电流传感器及其制造方法
CN111965571B (zh) * 2020-07-29 2022-11-11 珠海多创科技有限公司 一种gmr磁场传感器的制备方法
US11437061B1 (en) 2021-06-25 2022-09-06 Western Digital Technologies, Inc. Read head having one or more antiferromagnetic layers above soft bias side shields, and related methods
US11514930B1 (en) 2021-06-25 2022-11-29 Western Digital Technologies, Inc. Soft bias side shield stabilized by hard bias for read head design
US11514936B1 (en) 2021-06-25 2022-11-29 Western Digital Technologies, Inc. Read head having one or more antiferromagnetic layers below soft bias side shields, and related methods
US11514932B1 (en) 2021-06-25 2022-11-29 Western Digital Technologies, Inc. Soft bias shape anisotropy stabilization read head design and method of making same

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Also Published As

Publication number Publication date
JPH06111252A (ja) 1994-04-22
MY136486A (en) 2008-10-31
EP0585009A2 (en) 1994-03-02
EP0585009A3 (en) 1995-02-15
KR0128269B1 (ko) 1998-04-02
SG44357A1 (en) 1997-12-19
KR950015410A (ko) 1995-06-16
CN1083250A (zh) 1994-03-02
US5574605A (en) 1996-11-12
JP2725977B2 (ja) 1998-03-11
EP0585009B1 (en) 1998-03-04
DE69317178T2 (de) 1998-10-29
DE69317178D1 (de) 1998-04-09
CN1043935C (zh) 1999-06-30

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