TW232084B - Semiconductor device and method for forming the same - Google Patents

Semiconductor device and method for forming the same

Info

Publication number
TW232084B
TW232084B TW083101758A TW83101758A TW232084B TW 232084 B TW232084 B TW 232084B TW 083101758 A TW083101758 A TW 083101758A TW 83101758 A TW83101758 A TW 83101758A TW 232084 B TW232084 B TW 232084B
Authority
TW
Taiwan
Prior art keywords
thin
forming
same
semiconductor device
drain
Prior art date
Application number
TW083101758A
Other languages
Chinese (zh)
Inventor
Yasuhiko Takemura
Hideomi Suzawa
Original Assignee
Semiconductor Energy Res Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34394593A external-priority patent/JPH06314785A/en
Priority claimed from JP6014889A external-priority patent/JPH06314787A/en
Application filed by Semiconductor Energy Res Co Ltd filed Critical Semiconductor Energy Res Co Ltd
Application granted granted Critical
Publication of TW232084B publication Critical patent/TW232084B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

Abstract

The object of this invention is to improve the insulation reliability between the gate electrode/lead and the thin-film semiconductor domain (active layer) of a thin-film transistor,and to improve the characteristics of the transistor. By introducing an impurity having a conductivity type opposite to that of the impurity domains (source and drain) into the edge part of a thin-film semiconductor, and particularly into that part of the edge part above which the gate electrode crosses leakage of current between the source and the drain is reduced.
TW083101758A 1993-03-05 1994-03-01 Semiconductor device and method for forming the same TW232084B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7110493 1993-03-05
JP34394593A JPH06314785A (en) 1993-03-05 1993-12-17 Thin film semiconductor device and its manufacture
JP6014889A JPH06314787A (en) 1993-03-05 1994-01-13 Thin film semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
TW232084B true TW232084B (en) 1994-10-11

Family

ID=51348674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101758A TW232084B (en) 1993-03-05 1994-03-01 Semiconductor device and method for forming the same

Country Status (2)

Country Link
KR (1) KR940022920A (en)
TW (1) TW232084B (en)

Also Published As

Publication number Publication date
KR940022920A (en) 1994-10-22

Similar Documents

Publication Publication Date Title
TW363276B (en) Thin-film semiconductor device, thin-film transistor and method for fabricating the same
TW344141B (en) An insulated gate field effect transistor having a crystalline channel region
JPS577161A (en) Mos semiconductor device
MY111990A (en) Mos transistor and method for making the same
TW332924B (en) Semiconductor
WO2000030182A3 (en) Offset drain fermi-threshold field effect transistors
TW429628B (en) Transistor having substantially isolated body and method of making the same
WO1997038447A3 (en) High-voltage lateral mosfet soi device having a semiconductor linkup region
TW374212B (en) Metal insulative semiconductor field effect transistor having a planar member and electrodes on its upper surface and method for manufacturing the same
GB2346481A (en) Field effect transistor
WO2000028601A3 (en) Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
FR2452789A1 (en) FIELD EFFECT TRANSISTOR
AU8261498A (en) Power devices in wide bandgap semiconductor
MY107193A (en) Semiconductor device having improved insulated gate type transistor.
TW232084B (en) Semiconductor device and method for forming the same
TW328609B (en) Field effect transistor with reduced delay variation
KR950021267A (en) Manufacturing method of semiconductor device for increasing hydrogenation effect
MY113848A (en) Junction field effect transistor and method of producing the same
KR0120542B1 (en) Semiconductor device and method thereof
JPS6489367A (en) High breakdown strength semiconductor device
KR950021134A (en) Contact formation method of semiconductor device
SU1828340A1 (en) Field-effect transistor with control p-n junction
JPS57106078A (en) Mos semiconductor device
ATE544181T1 (en) FIELD EFFECT TRANSISTOR
KR930005272A (en) LDD type MOS transistor and manufacturing method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees