TW230843B - - Google Patents

Info

Publication number
TW230843B
TW230843B TW082104256A TW82104256A TW230843B TW 230843 B TW230843 B TW 230843B TW 082104256 A TW082104256 A TW 082104256A TW 82104256 A TW82104256 A TW 82104256A TW 230843 B TW230843 B TW 230843B
Authority
TW
Taiwan
Application number
TW082104256A
Other languages
Chinese (zh)
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Application granted granted Critical
Publication of TW230843B publication Critical patent/TW230843B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
TW082104256A 1992-06-24 1993-05-28 TW230843B (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011008A KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법

Publications (1)

Publication Number Publication Date
TW230843B true TW230843B (en, 2012) 1994-09-21

Family

ID=19335176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082104256A TW230843B (en, 2012) 1992-06-24 1993-05-28

Country Status (4)

Country Link
JP (1) JPH0689968A (en, 2012)
KR (1) KR950012555B1 (en, 2012)
DE (1) DE4320089B4 (en, 2012)
TW (1) TW230843B (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851473A3 (en) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Method of making a layer with high dielectric K, gate and capacitor insulator layer and device
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
KR19980060601A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 캐패시터 제조방법
JP4353665B2 (ja) * 2001-10-31 2009-10-28 三洋アクアテクノ株式会社 濾過装置
KR20040019512A (ko) 2002-08-28 2004-03-06 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338248A (ja) * 1986-08-04 1988-02-18 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0689968A (ja) 1994-03-29
DE4320089A1 (de) 1994-01-05
KR950012555B1 (ko) 1995-10-18
DE4320089B4 (de) 2007-05-03
KR940001405A (ko) 1994-01-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees