TW230843B - - Google Patents

Info

Publication number
TW230843B
TW230843B TW082104256A TW82104256A TW230843B TW 230843 B TW230843 B TW 230843B TW 082104256 A TW082104256 A TW 082104256A TW 82104256 A TW82104256 A TW 82104256A TW 230843 B TW230843 B TW 230843B
Authority
TW
Taiwan
Application number
TW082104256A
Other languages
Chinese (zh)
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Application granted granted Critical
Publication of TW230843B publication Critical patent/TW230843B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
TW082104256A 1992-06-24 1993-05-28 TW230843B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011008A KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법

Publications (1)

Publication Number Publication Date
TW230843B true TW230843B (de) 1994-09-21

Family

ID=19335176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082104256A TW230843B (de) 1992-06-24 1993-05-28

Country Status (4)

Country Link
JP (1) JPH0689968A (de)
KR (1) KR950012555B1 (de)
DE (1) DE4320089B4 (de)
TW (1) TW230843B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
EP0851473A3 (de) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Methode zur Herstellung einer Schicht mit hoher Dielektrizitätskonstante, Gate- und Kondensator-Isolationsschicht und ihre Anwendung
KR19980060601A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 캐패시터 제조방법
JP4353665B2 (ja) * 2001-10-31 2009-10-28 三洋アクアテクノ株式会社 濾過装置
KR20040019512A (ko) 2002-08-28 2004-03-06 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338248A (ja) * 1986-08-04 1988-02-18 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR950012555B1 (ko) 1995-10-18
JPH0689968A (ja) 1994-03-29
DE4320089A1 (de) 1994-01-05
KR940001405A (ko) 1994-01-11
DE4320089B4 (de) 2007-05-03

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees