TW230843B - - Google Patents
Info
- Publication number
- TW230843B TW230843B TW082104256A TW82104256A TW230843B TW 230843 B TW230843 B TW 230843B TW 082104256 A TW082104256 A TW 082104256A TW 82104256 A TW82104256 A TW 82104256A TW 230843 B TW230843 B TW 230843B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H10P14/69393—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920011008A KR950012555B1 (ko) | 1992-06-24 | 1992-06-24 | 메모리셀 캐패시터의 유전막 누설전류 개선방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW230843B true TW230843B (OSRAM) | 1994-09-21 |
Family
ID=19335176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082104256A TW230843B (OSRAM) | 1992-06-24 | 1993-05-28 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0689968A (OSRAM) |
| KR (1) | KR950012555B1 (OSRAM) |
| DE (1) | DE4320089B4 (OSRAM) |
| TW (1) | TW230843B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548854B1 (en) | 1997-12-22 | 2003-04-15 | Agere Systems Inc. | Compound, high-K, gate and capacitor insulator layer |
| EP0851473A3 (en) * | 1996-12-23 | 1998-07-22 | Lucent Technologies Inc. | Method of making a layer with high dielectric K, gate and capacitor insulator layer and device |
| KR19980060601A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
| JP4353665B2 (ja) * | 2001-10-31 | 2009-10-28 | 三洋アクアテクノ株式会社 | 濾過装置 |
| KR20040019512A (ko) | 2002-08-28 | 2004-03-06 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6338248A (ja) * | 1986-08-04 | 1988-02-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
1992
- 1992-06-24 KR KR1019920011008A patent/KR950012555B1/ko not_active Expired - Fee Related
-
1993
- 1993-05-28 TW TW082104256A patent/TW230843B/zh not_active IP Right Cessation
- 1993-06-17 DE DE4320089A patent/DE4320089B4/de not_active Expired - Fee Related
- 1993-06-24 JP JP5153478A patent/JPH0689968A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR940001405A (ko) | 1994-01-11 |
| DE4320089B4 (de) | 2007-05-03 |
| JPH0689968A (ja) | 1994-03-29 |
| DE4320089A1 (de) | 1994-01-05 |
| KR950012555B1 (ko) | 1995-10-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |