TW221081B - - Google Patents

Info

Publication number
TW221081B
TW221081B TW081104891A TW81104891A TW221081B TW 221081 B TW221081 B TW 221081B TW 081104891 A TW081104891 A TW 081104891A TW 81104891 A TW81104891 A TW 81104891A TW 221081 B TW221081 B TW 221081B
Authority
TW
Taiwan
Application number
TW081104891A
Other languages
Chinese (zh)
Original Assignee
Semiconductor Energy Res Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Res Co Ltd filed Critical Semiconductor Energy Res Co Ltd
Application granted granted Critical
Publication of TW221081B publication Critical patent/TW221081B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R25/00—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles
    • B60R25/01—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens
    • B60R25/04—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor
    • B60R25/06—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor operating on the vehicle transmission
    • B60R25/066—Locking of hand actuated control actuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW081104891A 1992-03-26 1992-06-22 TW221081B (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10047992 1992-03-26
JP4108489A JPH05326429A (ja) 1992-03-26 1992-04-01 レーザー処理方法およびレーザー処理装置

Publications (1)

Publication Number Publication Date
TW221081B true TW221081B (enrdf_load_stackoverflow) 1994-02-11

Family

ID=14275060

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081104891A TW221081B (enrdf_load_stackoverflow) 1992-03-26 1992-06-22

Country Status (3)

Country Link
JP (2) JPH05326429A (enrdf_load_stackoverflow)
KR (1) KR960008499B1 (enrdf_load_stackoverflow)
TW (1) TW221081B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US5616935A (en) 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6562705B1 (en) 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
KR20020085577A (ko) * 2001-05-09 2002-11-16 아남반도체 주식회사 게이트전극 제조방법
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4737366B2 (ja) * 2004-02-25 2011-07-27 セイコーエプソン株式会社 半導体装置の製造方法
JP2008243975A (ja) * 2007-03-26 2008-10-09 Japan Steel Works Ltd:The アモルファス薄膜の結晶化方法および結晶化装置
CN114465086B (zh) * 2022-01-19 2024-03-15 河南仕佳光子科技股份有限公司 一种dfb激光器光学膜的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50117374A (enrdf_load_stackoverflow) * 1974-02-28 1975-09-13
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS5630721A (en) * 1979-08-21 1981-03-27 Nec Corp Diffusing device of selected impurity
JPS57162339A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
JPS62130562A (ja) * 1985-11-30 1987-06-12 Nippon Gakki Seizo Kk 電界効果トランジスタの製法
JP2611236B2 (ja) * 1987-07-03 1997-05-21 ソニー株式会社 半導体製造装置
JPH01101625A (ja) * 1987-10-15 1989-04-19 Komatsu Ltd 半導体装置の製造方法
JP2628064B2 (ja) * 1988-04-11 1997-07-09 東京エレクトロン株式会社 被処理体の処理装置
JPH02222545A (ja) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JP2764425B2 (ja) * 1989-02-27 1998-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2805321B2 (ja) * 1989-02-28 1998-09-30 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法

Also Published As

Publication number Publication date
KR960008499B1 (ko) 1996-06-26
JPH05326430A (ja) 1993-12-10
KR930020566A (ko) 1993-10-20
JP3375988B2 (ja) 2003-02-10
JPH05326429A (ja) 1993-12-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees