TW216469B - - Google Patents

Info

Publication number
TW216469B
TW216469B TW081102164A TW81102164A TW216469B TW 216469 B TW216469 B TW 216469B TW 081102164 A TW081102164 A TW 081102164A TW 81102164 A TW81102164 A TW 81102164A TW 216469 B TW216469 B TW 216469B
Authority
TW
Taiwan
Application number
TW081102164A
Other languages
Chinese (zh)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Application granted granted Critical
Publication of TW216469B publication Critical patent/TW216469B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
TW081102164A 1991-06-13 1992-03-23 TW216469B (env)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4119531A DE4119531A1 (de) 1991-06-13 1991-06-13 Epitaxierte halbleiterscheiben mit sauerstoffarmer zone einstellbarer ausdehnung und verfahren zu ihrer herstellung

Publications (1)

Publication Number Publication Date
TW216469B true TW216469B (env) 1993-11-21

Family

ID=6433879

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081102164A TW216469B (env) 1991-06-13 1992-03-23

Country Status (6)

Country Link
US (1) US5355831A (env)
EP (1) EP0518325B1 (env)
JP (1) JPH0834189B2 (env)
KR (1) KR960001464B1 (env)
DE (2) DE4119531A1 (env)
TW (1) TW216469B (env)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730338A (zh) * 2012-10-12 2014-04-16 富士电机株式会社 半导体器件的制造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923071A (en) * 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
EP0573921A3 (en) * 1992-06-12 1994-09-28 Seiko Instr Inc Semiconductor device having a semiconductor film of low oxygen concentration
US5342805A (en) * 1993-07-01 1994-08-30 G.I. Corporation Method of growing a semiconductor material by epilaxy
DE19520175A1 (de) * 1995-06-01 1996-12-12 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
JP3312553B2 (ja) * 1996-03-09 2002-08-12 信越半導体株式会社 シリコン単結晶およびシリコン単結晶薄膜の製造方法
TW429478B (en) * 1997-08-29 2001-04-11 Toshiba Corp Semiconductor device and method for manufacturing the same
DE19740905C1 (de) * 1997-09-17 1999-03-04 Siemens Ag Verfahren zum Beseitigen von Sauerstoff-Restverunreinigungen aus tiegelgezogenen Siliziumwafern
US6022793A (en) * 1997-10-21 2000-02-08 Seh America, Inc. Silicon and oxygen ion co-implantation for metallic gettering in epitaxial wafers
US6339016B1 (en) * 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
JP2003124219A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウエーハおよびエピタキシャルシリコンウエーハ
US6809003B1 (en) * 2003-04-02 2004-10-26 Polarfab Llc Bi-directional epitaxial doping technique
DE102009004557B4 (de) * 2009-01-14 2018-03-08 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102013008787A1 (de) 2013-05-22 2014-11-27 Hans-Martin Paschetag Holzhebewerkzeug und Verfahren zum Ablegen oder Abwerfen von Holzteilen
DE102015224446A1 (de) * 2015-12-07 2017-06-08 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
DE102018200415A1 (de) 2018-01-11 2019-07-11 Siltronic Ag Halbleiterscheibe mit epitaktischer Schicht
DE102018202059A1 (de) 2018-02-09 2019-08-14 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
JPS55160443A (en) * 1979-05-22 1980-12-13 Semiconductor Res Found Manufacture of semiconductor integrated circuit device
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
IT1216212B (it) * 1986-10-29 1990-02-22 S G S Microelettrica S P A Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
JPH0493031A (ja) * 1990-08-09 1992-03-25 Nec Corp シリコン半導体基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730338A (zh) * 2012-10-12 2014-04-16 富士电机株式会社 半导体器件的制造方法

Also Published As

Publication number Publication date
US5355831A (en) 1994-10-18
EP0518325A3 (en) 1993-03-17
KR930001304A (ko) 1993-01-16
DE59202300D1 (de) 1995-06-29
JPH0834189B2 (ja) 1996-03-29
JPH05182920A (ja) 1993-07-23
EP0518325B1 (de) 1995-05-24
KR960001464B1 (ko) 1996-01-30
EP0518325A2 (de) 1992-12-16
DE4119531A1 (de) 1992-12-17

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