IT1216212B - Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio - Google Patents

Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio

Info

Publication number
IT1216212B
IT1216212B IT8606616A IT661686A IT1216212B IT 1216212 B IT1216212 B IT 1216212B IT 8606616 A IT8606616 A IT 8606616A IT 661686 A IT661686 A IT 661686A IT 1216212 B IT1216212 B IT 1216212B
Authority
IT
Italy
Prior art keywords
many
controlled
epitaxial layers
silicon substrates
grown
Prior art date
Application number
IT8606616A
Other languages
English (en)
Other versions
IT8606616A0 (it
Inventor
Ferla Giuseppe
Beretta Giorgio
Original Assignee
S G S Microelettrica S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S G S Microelettrica S P A filed Critical S G S Microelettrica S P A
Priority to IT8606616A priority Critical patent/IT1216212B/it
Publication of IT8606616A0 publication Critical patent/IT8606616A0/it
Priority to EP87201965A priority patent/EP0265988A1/en
Priority to JP62270475A priority patent/JPS63116420A/ja
Application granted granted Critical
Publication of IT1216212B publication Critical patent/IT1216212B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT8606616A 1986-10-29 1986-10-29 Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio IT1216212B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8606616A IT1216212B (it) 1986-10-29 1986-10-29 Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio
EP87201965A EP0265988A1 (en) 1986-10-29 1987-10-13 Epitaxial layers with controlled quantities of nitrogen, grown on silicon substrates and method for producing the same
JP62270475A JPS63116420A (ja) 1986-10-29 1987-10-28 半導体基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8606616A IT1216212B (it) 1986-10-29 1986-10-29 Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio

Publications (2)

Publication Number Publication Date
IT8606616A0 IT8606616A0 (it) 1986-10-29
IT1216212B true IT1216212B (it) 1990-02-22

Family

ID=11121468

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8606616A IT1216212B (it) 1986-10-29 1986-10-29 Strati epitassiali con quanti ta' controllate di azoto cresciuti su substrati di silicio

Country Status (3)

Country Link
EP (1) EP0265988A1 (it)
JP (1) JPS63116420A (it)
IT (1) IT1216212B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4119531A1 (de) * 1991-06-13 1992-12-17 Wacker Chemitronic Epitaxierte halbleiterscheiben mit sauerstoffarmer zone einstellbarer ausdehnung und verfahren zu ihrer herstellung
JP4779519B2 (ja) * 2005-09-08 2011-09-28 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
TWI541864B (zh) * 2012-12-06 2016-07-11 世創電子材料公司 磊晶晶圓及其製造方法
JP6299835B1 (ja) * 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318678A1 (fr) * 1973-12-13 1977-02-18 Radiotechnique Compelec Procede de depot epitaxial de semiconducteur dope

Also Published As

Publication number Publication date
IT8606616A0 (it) 1986-10-29
EP0265988A1 (en) 1988-05-04
JPS63116420A (ja) 1988-05-20

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