TW202507794A - 壁構件及電漿處理裝置 - Google Patents

壁構件及電漿處理裝置 Download PDF

Info

Publication number
TW202507794A
TW202507794A TW113105292A TW113105292A TW202507794A TW 202507794 A TW202507794 A TW 202507794A TW 113105292 A TW113105292 A TW 113105292A TW 113105292 A TW113105292 A TW 113105292A TW 202507794 A TW202507794 A TW 202507794A
Authority
TW
Taiwan
Prior art keywords
cavity
wall member
circumferential direction
pipe member
valve body
Prior art date
Application number
TW113105292A
Other languages
English (en)
Chinese (zh)
Inventor
平隆志
馬場涼仁
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202507794A publication Critical patent/TW202507794A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/166—Sealing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW113105292A 2023-02-21 2024-02-15 壁構件及電漿處理裝置 TW202507794A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-024921 2023-02-21
JP2023024921 2023-02-21

Publications (1)

Publication Number Publication Date
TW202507794A true TW202507794A (zh) 2025-02-16

Family

ID=92501208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113105292A TW202507794A (zh) 2023-02-21 2024-02-15 壁構件及電漿處理裝置

Country Status (6)

Country Link
US (1) US20250364232A1 (https=)
JP (1) JP7770611B2 (https=)
KR (1) KR20250153776A (https=)
CN (1) CN120693683A (https=)
TW (1) TW202507794A (https=)
WO (1) WO2024176976A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093411A (ja) * 2004-09-24 2006-04-06 Hitachi Kokusai Electric Inc 基板処理装置
JP5651317B2 (ja) 2009-03-31 2015-01-07 東京エレクトロン株式会社 半導体製造装置及び温調方法
JP5396256B2 (ja) 2009-12-10 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
JP7066512B2 (ja) * 2018-05-11 2022-05-13 東京エレクトロン株式会社 プラズマ処理装置
JP7374016B2 (ja) * 2019-06-18 2023-11-06 東京エレクトロン株式会社 基板処理装置
JP7519874B2 (ja) * 2020-10-27 2024-07-22 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
WO2024176976A1 (ja) 2024-08-29
CN120693683A (zh) 2025-09-23
JPWO2024176976A1 (https=) 2024-08-29
US20250364232A1 (en) 2025-11-27
KR20250153776A (ko) 2025-10-27
JP7770611B2 (ja) 2025-11-14

Similar Documents

Publication Publication Date Title
CN111524850B (zh) 载置台和基片处理装置
JP7551765B2 (ja) 基板処理チャンバにおける処理キットのシース及び温度制御
US11862436B2 (en) Plasma processing apparatus and plasma processing method
US10304691B2 (en) Method of etching silicon oxide and silicon nitride selectively against each other
US20180330925A1 (en) Supporting unit and substrate treating apparatus including the same
KR102042612B1 (ko) 반도체 프로세싱에서 엣지 링의 열 관리
TWI861321B (zh) 用於射頻環境的冷卻的基板支撐組件
JP2022548010A (ja) 極低温静電チャック
TWI902937B (zh) 電漿處理裝置
TW201936014A (zh) 電漿處理裝置
JP2004342703A (ja) プラズマ処理装置及びプラズマ処理方法
KR102899384B1 (ko) 셔터 기구 및 기판 처리 장치
JP7629984B2 (ja) 冷却された静電チャックを使用した半導体処理
TW202507794A (zh) 壁構件及電漿處理裝置
CN116364517A (zh) 基板处理设备
KR100734016B1 (ko) 기판 재치대 및 이를 구비한 플라즈마 처리 장치
TW202529163A (zh) 電漿處理腔室蓋冷卻
JP2026007621A (ja) 基板処理装置、および基板処理方法
TW202607818A (zh) 基板處理裝置及擋門機構