TW202503828A - 電漿處理裝置及電漿蝕刻方法 - Google Patents

電漿處理裝置及電漿蝕刻方法 Download PDF

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Publication number
TW202503828A
TW202503828A TW113103674A TW113103674A TW202503828A TW 202503828 A TW202503828 A TW 202503828A TW 113103674 A TW113103674 A TW 113103674A TW 113103674 A TW113103674 A TW 113103674A TW 202503828 A TW202503828 A TW 202503828A
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TW
Taiwan
Prior art keywords
substrate
light
plasma processing
processing device
plasma
Prior art date
Application number
TW113103674A
Other languages
English (en)
Chinese (zh)
Inventor
松本直樹
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202503828A publication Critical patent/TW202503828A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
TW113103674A 2023-02-03 2024-01-31 電漿處理裝置及電漿蝕刻方法 TW202503828A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2023015672 2023-02-03
JP2023-015672 2023-02-03
WOPCT/JP2024/002218 2024-01-25
PCT/JP2024/002218 WO2024162171A1 (ja) 2023-02-03 2024-01-25 プラズマ処理装置及びプラズマエッチング方法

Publications (1)

Publication Number Publication Date
TW202503828A true TW202503828A (zh) 2025-01-16

Family

ID=92146646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113103674A TW202503828A (zh) 2023-02-03 2024-01-31 電漿處理裝置及電漿蝕刻方法

Country Status (4)

Country Link
US (1) US20250349524A1 (https=)
JP (1) JPWO2024162171A1 (https=)
TW (1) TW202503828A (https=)
WO (1) WO2024162171A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022224795A1 (ja) * 2021-04-23 2022-10-27 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251397A (ja) * 1992-03-05 1993-09-28 Fujitsu Ltd 基板温度の測定方法
JPH08222549A (ja) * 1995-02-16 1996-08-30 Sony Corp プラズマ処理装置およびプラズマ処理方法
JP2020043180A (ja) * 2018-09-07 2020-03-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2020110192A1 (ja) * 2018-11-27 2020-06-04 株式会社日立ハイテクノロジーズ プラズマ処理装置及びそれを用いた試料の処理方法

Also Published As

Publication number Publication date
US20250349524A1 (en) 2025-11-13
JPWO2024162171A1 (https=) 2024-08-08
WO2024162171A1 (ja) 2024-08-08

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