JPWO2024162171A1 - - Google Patents
Info
- Publication number
- JPWO2024162171A1 JPWO2024162171A1 JP2024574836A JP2024574836A JPWO2024162171A1 JP WO2024162171 A1 JPWO2024162171 A1 JP WO2024162171A1 JP 2024574836 A JP2024574836 A JP 2024574836A JP 2024574836 A JP2024574836 A JP 2024574836A JP WO2024162171 A1 JPWO2024162171 A1 JP WO2024162171A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023015672 | 2023-02-03 | ||
| PCT/JP2024/002218 WO2024162171A1 (ja) | 2023-02-03 | 2024-01-25 | プラズマ処理装置及びプラズマエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024162171A1 true JPWO2024162171A1 (https=) | 2024-08-08 |
| JPWO2024162171A5 JPWO2024162171A5 (https=) | 2025-10-16 |
Family
ID=92146646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024574836A Pending JPWO2024162171A1 (https=) | 2023-02-03 | 2024-01-25 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250349524A1 (https=) |
| JP (1) | JPWO2024162171A1 (https=) |
| TW (1) | TW202503828A (https=) |
| WO (1) | WO2024162171A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022224795A1 (ja) * | 2021-04-23 | 2022-10-27 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板処理方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251397A (ja) * | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | 基板温度の測定方法 |
| JPH08222549A (ja) * | 1995-02-16 | 1996-08-30 | Sony Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP2020043180A (ja) * | 2018-09-07 | 2020-03-19 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| WO2020110192A1 (ja) * | 2018-11-27 | 2020-06-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた試料の処理方法 |
-
2024
- 2024-01-25 WO PCT/JP2024/002218 patent/WO2024162171A1/ja not_active Ceased
- 2024-01-25 JP JP2024574836A patent/JPWO2024162171A1/ja active Pending
- 2024-01-31 TW TW113103674A patent/TW202503828A/zh unknown
-
2025
- 2025-07-24 US US19/278,865 patent/US20250349524A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202503828A (zh) | 2025-01-16 |
| US20250349524A1 (en) | 2025-11-13 |
| WO2024162171A1 (ja) | 2024-08-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250723 |