TW202449029A - 可濕式除去之含矽之光阻下層膜形成用組成物 - Google Patents
可濕式除去之含矽之光阻下層膜形成用組成物 Download PDFInfo
- Publication number
- TW202449029A TW202449029A TW113115671A TW113115671A TW202449029A TW 202449029 A TW202449029 A TW 202449029A TW 113115671 A TW113115671 A TW 113115671A TW 113115671 A TW113115671 A TW 113115671A TW 202449029 A TW202449029 A TW 202449029A
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- silicon
- photoresist
- methyl
- underlayer film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023073388 | 2023-04-27 | ||
| JP2023-073388 | 2023-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202449029A true TW202449029A (zh) | 2024-12-16 |
Family
ID=93256820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113115671A TW202449029A (zh) | 2023-04-27 | 2024-04-26 | 可濕式除去之含矽之光阻下層膜形成用組成物 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024225431A1 (https=) |
| KR (1) | KR20260003011A (https=) |
| CN (1) | CN121002447A (https=) |
| TW (1) | TW202449029A (https=) |
| WO (1) | WO2024225431A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6250514B2 (ja) | 2014-10-03 | 2017-12-20 | 信越化学工業株式会社 | 塗布型bpsg膜形成用組成物、基板、及びパターン形成方法 |
| CN110494807A (zh) | 2017-03-31 | 2019-11-22 | 日产化学株式会社 | 具有羰基结构的含有硅的抗蚀剂下层膜形成用组合物 |
| US12585188B2 (en) * | 2020-04-30 | 2026-03-24 | Nissan Chemical Corporation | Composition for forming resist underlying film |
| US20240201593A1 (en) * | 2021-03-31 | 2024-06-20 | Nissan Chemical Corporation | Composition for forming silicon-containing resist underlayer film |
-
2024
- 2024-04-26 JP JP2025516915A patent/JPWO2024225431A1/ja active Pending
- 2024-04-26 TW TW113115671A patent/TW202449029A/zh unknown
- 2024-04-26 KR KR1020257038799A patent/KR20260003011A/ko active Pending
- 2024-04-26 WO PCT/JP2024/016416 patent/WO2024225431A1/ja not_active Ceased
- 2024-04-26 CN CN202480027028.6A patent/CN121002447A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN121002447A (zh) | 2025-11-21 |
| KR20260003011A (ko) | 2026-01-06 |
| WO2024225431A1 (ja) | 2024-10-31 |
| JPWO2024225431A1 (https=) | 2024-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7197840B2 (ja) | アンモニウム基を有する有機基を含むシリコン含有レジスト下層膜形成組成物 | |
| TWI877359B (zh) | 光阻下層膜形成用組成物 | |
| TWI906277B (zh) | 膜形成用組成物 | |
| US20240295819A1 (en) | Composition for forming silicon-containing resist underlayer film | |
| TWI884943B (zh) | 膜形成用組成物 | |
| JP2025134863A (ja) | 添加剤含有シリコン含有レジスト下層膜形成組成物 | |
| TWI871457B (zh) | 膜形成用組成物 | |
| US20240377745A1 (en) | Silicon-containing resist underlayer film-forming composition and silicon-containing resist underlayer film | |
| US20240231230A1 (en) | Composition for forming silicon-containing resist underlayer film | |
| TW202449029A (zh) | 可濕式除去之含矽之光阻下層膜形成用組成物 | |
| TWI920274B (zh) | 含矽之光阻下層膜形成用組成物 | |
| TWI881099B (zh) | 膜形成用組成物 | |
| CN115485624B (en) | Composition for forming resist underlayer film | |
| TW202104381A (zh) | 膜形成用組成物 | |
| TW202445269A (zh) | 含矽抗蝕劑底層膜形成用組成物 | |
| TW202424060A (zh) | 含矽之光阻下層膜形成用組成物 | |
| TW202532972A (zh) | 含矽之下層膜形成用組成物 | |
| TW202411781A (zh) | 含有多官能磺酸之含矽之光阻下層膜形成用組成物 | |
| TW202438576A (zh) | i射線微影用之含矽之光阻下層膜形成用組成物 | |
| CN117396810A (zh) | 含有硅的抗蚀剂下层膜形成用组合物 | |
| KR20260002600A (ko) | 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성 조성물 | |
| US20240295815A1 (en) | Silicon-containing resist underlayer film-forming composition | |
| TW202542651A (zh) | 積層體之製造方法、及半導體元件之製造方法 | |
| KR20250160464A (ko) | 탄소-탄소 이중 결합을 가지는 실리콘 함유 레지스트 하층막 형성용 조성물 | |
| TW202248296A (zh) | 含矽之光阻下層膜形成用組成物 |