TW202449029A - 可濕式除去之含矽之光阻下層膜形成用組成物 - Google Patents

可濕式除去之含矽之光阻下層膜形成用組成物 Download PDF

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Publication number
TW202449029A
TW202449029A TW113115671A TW113115671A TW202449029A TW 202449029 A TW202449029 A TW 202449029A TW 113115671 A TW113115671 A TW 113115671A TW 113115671 A TW113115671 A TW 113115671A TW 202449029 A TW202449029 A TW 202449029A
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TW
Taiwan
Prior art keywords
group
silicon
photoresist
methyl
underlayer film
Prior art date
Application number
TW113115671A
Other languages
English (en)
Chinese (zh)
Inventor
志垣修平
柴山亘
Original Assignee
日商日產化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202449029A publication Critical patent/TW202449029A/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
TW113115671A 2023-04-27 2024-04-26 可濕式除去之含矽之光阻下層膜形成用組成物 TW202449029A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023073388 2023-04-27
JP2023-073388 2023-04-27

Publications (1)

Publication Number Publication Date
TW202449029A true TW202449029A (zh) 2024-12-16

Family

ID=93256820

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113115671A TW202449029A (zh) 2023-04-27 2024-04-26 可濕式除去之含矽之光阻下層膜形成用組成物

Country Status (5)

Country Link
JP (1) JPWO2024225431A1 (https=)
KR (1) KR20260003011A (https=)
CN (1) CN121002447A (https=)
TW (1) TW202449029A (https=)
WO (1) WO2024225431A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6250514B2 (ja) 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型bpsg膜形成用組成物、基板、及びパターン形成方法
CN110494807A (zh) 2017-03-31 2019-11-22 日产化学株式会社 具有羰基结构的含有硅的抗蚀剂下层膜形成用组合物
US12585188B2 (en) * 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film
US20240201593A1 (en) * 2021-03-31 2024-06-20 Nissan Chemical Corporation Composition for forming silicon-containing resist underlayer film

Also Published As

Publication number Publication date
CN121002447A (zh) 2025-11-21
KR20260003011A (ko) 2026-01-06
WO2024225431A1 (ja) 2024-10-31
JPWO2024225431A1 (https=) 2024-10-31

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