CN121002447A - 能够湿式去除的含硅抗蚀剂下层膜形成用组合物 - Google Patents

能够湿式去除的含硅抗蚀剂下层膜形成用组合物

Info

Publication number
CN121002447A
CN121002447A CN202480027028.6A CN202480027028A CN121002447A CN 121002447 A CN121002447 A CN 121002447A CN 202480027028 A CN202480027028 A CN 202480027028A CN 121002447 A CN121002447 A CN 121002447A
Authority
CN
China
Prior art keywords
group
silicon
underlayer film
resist underlayer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480027028.6A
Other languages
English (en)
Chinese (zh)
Inventor
志垣修平
柴山亘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN121002447A publication Critical patent/CN121002447A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
CN202480027028.6A 2023-04-27 2024-04-26 能够湿式去除的含硅抗蚀剂下层膜形成用组合物 Pending CN121002447A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023073388 2023-04-27
JP2023-073388 2023-04-27
PCT/JP2024/016416 WO2024225431A1 (ja) 2023-04-27 2024-04-26 湿式除去可能なシリコン含有レジスト下層膜形成用組成物

Publications (1)

Publication Number Publication Date
CN121002447A true CN121002447A (zh) 2025-11-21

Family

ID=93256820

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480027028.6A Pending CN121002447A (zh) 2023-04-27 2024-04-26 能够湿式去除的含硅抗蚀剂下层膜形成用组合物

Country Status (5)

Country Link
JP (1) JPWO2024225431A1 (https=)
KR (1) KR20260003011A (https=)
CN (1) CN121002447A (https=)
TW (1) TW202449029A (https=)
WO (1) WO2024225431A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6250514B2 (ja) 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
CN110494807A (zh) 2017-03-31 2019-11-22 日产化学株式会社 具有羰基结构的含有硅的抗蚀剂下层膜形成用组合物
US12585188B2 (en) * 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film
US20240201593A1 (en) * 2021-03-31 2024-06-20 Nissan Chemical Corporation Composition for forming silicon-containing resist underlayer film

Also Published As

Publication number Publication date
KR20260003011A (ko) 2026-01-06
WO2024225431A1 (ja) 2024-10-31
JPWO2024225431A1 (https=) 2024-10-31
TW202449029A (zh) 2024-12-16

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