KR20260003011A - 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성용 조성물 - Google Patents
습식 제거 가능한 실리콘 함유 레지스트 하층막 형성용 조성물Info
- Publication number
- KR20260003011A KR20260003011A KR1020257038799A KR20257038799A KR20260003011A KR 20260003011 A KR20260003011 A KR 20260003011A KR 1020257038799 A KR1020257038799 A KR 1020257038799A KR 20257038799 A KR20257038799 A KR 20257038799A KR 20260003011 A KR20260003011 A KR 20260003011A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- silicon
- underlayer film
- resist underlayer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H01L21/0274—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023073388 | 2023-04-27 | ||
| JPJP-P-2023-073388 | 2023-04-27 | ||
| PCT/JP2024/016416 WO2024225431A1 (ja) | 2023-04-27 | 2024-04-26 | 湿式除去可能なシリコン含有レジスト下層膜形成用組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260003011A true KR20260003011A (ko) | 2026-01-06 |
Family
ID=93256820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257038799A Pending KR20260003011A (ko) | 2023-04-27 | 2024-04-26 | 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성용 조성물 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024225431A1 (https=) |
| KR (1) | KR20260003011A (https=) |
| CN (1) | CN121002447A (https=) |
| TW (1) | TW202449029A (https=) |
| WO (1) | WO2024225431A1 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016074774A (ja) | 2014-10-03 | 2016-05-12 | 信越化学工業株式会社 | 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法 |
| WO2018181989A1 (ja) | 2017-03-31 | 2018-10-04 | 日産化学株式会社 | カルボニル構造を有するシリコン含有レジスト下層膜形成組成物 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12585188B2 (en) * | 2020-04-30 | 2026-03-24 | Nissan Chemical Corporation | Composition for forming resist underlying film |
| US20240201593A1 (en) * | 2021-03-31 | 2024-06-20 | Nissan Chemical Corporation | Composition for forming silicon-containing resist underlayer film |
-
2024
- 2024-04-26 JP JP2025516915A patent/JPWO2024225431A1/ja active Pending
- 2024-04-26 TW TW113115671A patent/TW202449029A/zh unknown
- 2024-04-26 KR KR1020257038799A patent/KR20260003011A/ko active Pending
- 2024-04-26 WO PCT/JP2024/016416 patent/WO2024225431A1/ja not_active Ceased
- 2024-04-26 CN CN202480027028.6A patent/CN121002447A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016074774A (ja) | 2014-10-03 | 2016-05-12 | 信越化学工業株式会社 | 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法 |
| WO2018181989A1 (ja) | 2017-03-31 | 2018-10-04 | 日産化学株式会社 | カルボニル構造を有するシリコン含有レジスト下層膜形成組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN121002447A (zh) | 2025-11-21 |
| WO2024225431A1 (ja) | 2024-10-31 |
| JPWO2024225431A1 (https=) | 2024-10-31 |
| TW202449029A (zh) | 2024-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |