TW202447349A - 抗蝕劑底層膜形成用組成物、半導體基板的製造方法及抗蝕劑底層膜形成用聚合物 - Google Patents

抗蝕劑底層膜形成用組成物、半導體基板的製造方法及抗蝕劑底層膜形成用聚合物 Download PDF

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Publication number
TW202447349A
TW202447349A TW113110851A TW113110851A TW202447349A TW 202447349 A TW202447349 A TW 202447349A TW 113110851 A TW113110851 A TW 113110851A TW 113110851 A TW113110851 A TW 113110851A TW 202447349 A TW202447349 A TW 202447349A
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Taiwan
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group
formula
divalent
carbon atoms
composition
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TW113110851A
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English (en)
Chinese (zh)
Inventor
江原健悟
山田修平
出井慧
土橋将人
真弓公佑
田坪大来
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日商Jsr 股份有限公司
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Publication of TW202447349A publication Critical patent/TW202447349A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/38—Low-molecular-weight compounds having heteroatoms other than oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
TW113110851A 2023-03-30 2024-03-22 抗蝕劑底層膜形成用組成物、半導體基板的製造方法及抗蝕劑底層膜形成用聚合物 TW202447349A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-055660 2023-03-30
JP2023055660 2023-03-30

Publications (1)

Publication Number Publication Date
TW202447349A true TW202447349A (zh) 2024-12-01

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TW113110851A TW202447349A (zh) 2023-03-30 2024-03-22 抗蝕劑底層膜形成用組成物、半導體基板的製造方法及抗蝕劑底層膜形成用聚合物

Country Status (3)

Country Link
JP (1) JPWO2024203153A1 (https=)
TW (1) TW202447349A (https=)
WO (1) WO2024203153A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI293636B (en) * 2006-03-27 2008-02-21 Eternal Chemical Co Ltd Polyurethane polymer having bisphenol group and photoimageable composition containing the same
JP2015145944A (ja) * 2014-02-03 2015-08-13 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN108713164B (zh) * 2016-03-09 2022-03-18 日产化学工业株式会社 抗蚀剂下层膜形成用组合物及使用了该组合物的抗蚀剂图案的形成方法
US20230236504A1 (en) * 2019-12-17 2023-07-27 Lg Chem, Ltd. Compound, binder resin, negative-type photosensitive resin composition, and display device comprising black bank formed using same

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WO2024203153A1 (ja) 2024-10-03

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