TW202444768A - 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 Download PDF

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TW202444768A
TW202444768A TW113108159A TW113108159A TW202444768A TW 202444768 A TW202444768 A TW 202444768A TW 113108159 A TW113108159 A TW 113108159A TW 113108159 A TW113108159 A TW 113108159A TW 202444768 A TW202444768 A TW 202444768A
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Taiwan
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formula
resin
represented
repeating unit
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TW113108159A
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金子明弘
後藤研由
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日商富士軟片股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
TW113108159A 2023-03-07 2024-03-06 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 TW202444768A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023034922 2023-03-07
JP2023-034922 2023-03-07

Publications (1)

Publication Number Publication Date
TW202444768A true TW202444768A (zh) 2024-11-16

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TW113108159A TW202444768A (zh) 2023-03-07 2024-03-06 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法

Country Status (8)

Country Link
US (1) US20260003269A1 (https=)
EP (1) EP4679174A1 (https=)
JP (1) JPWO2024185674A1 (https=)
KR (1) KR20250145061A (https=)
CN (1) CN120836011A (https=)
IL (1) IL323134A (https=)
TW (1) TW202444768A (https=)
WO (1) WO2024185674A1 (https=)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
KR101744608B1 (ko) 2011-03-28 2017-06-08 후지필름 가부시키가이샤 감활성 광선성 또는 감방사선성 수지 조성물, 및 이 조성물을 이용한 감활성 광선성 또는 감방사선성 막 및 패턴 형성 방법
JP2013061648A (ja) 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトレジスト上塗り組成物および電子デバイスを形成する方法
KR102075960B1 (ko) 2012-03-14 2020-02-11 제이에스알 가부시끼가이샤 포토레지스트 조성물, 레지스트 패턴 형성 방법, 산 확산 제어제 및 화합물
JP5850873B2 (ja) 2012-07-27 2016-02-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5836299B2 (ja) 2012-08-20 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法
JP6002705B2 (ja) 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
JP5676021B2 (ja) 2014-01-06 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
US9644056B2 (en) 2015-02-18 2017-05-09 Sumitomo Chemical Company, Limited Compound, resin and photoresist composition
JP6518475B2 (ja) 2015-03-20 2019-05-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物
JP6394481B2 (ja) 2015-04-28 2018-09-26 信越化学工業株式会社 レジスト組成物及びパターン形成方法
KR102077500B1 (ko) * 2015-05-14 2020-02-14 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 감활성광선성 또는 감방사선성 수지 조성물
JP6650509B2 (ja) * 2016-03-07 2020-02-19 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
KR102395705B1 (ko) 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
KR102537251B1 (ko) 2018-06-28 2023-05-26 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지
JP7076570B2 (ja) 2018-09-25 2022-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2020158337A1 (ja) 2019-01-28 2020-08-06 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
KR102826221B1 (ko) 2020-07-27 2025-06-27 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7828308B2 (ja) 2021-02-15 2026-03-11 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法
JP7622586B2 (ja) 2021-08-31 2025-01-28 三菱ケミカルインフラテック株式会社 床暖房パネル、その設置方法及びヘッダー

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Publication number Publication date
US20260003269A1 (en) 2026-01-01
CN120836011A (zh) 2025-10-24
KR20250145061A (ko) 2025-10-13
EP4679174A1 (en) 2026-01-14
IL323134A (en) 2025-11-01
WO2024185674A1 (ja) 2024-09-12
JPWO2024185674A1 (https=) 2024-09-12

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