TW202433655A - 基板支持器及電漿處理裝置 - Google Patents

基板支持器及電漿處理裝置 Download PDF

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Publication number
TW202433655A
TW202433655A TW112139908A TW112139908A TW202433655A TW 202433655 A TW202433655 A TW 202433655A TW 112139908 A TW112139908 A TW 112139908A TW 112139908 A TW112139908 A TW 112139908A TW 202433655 A TW202433655 A TW 202433655A
Authority
TW
Taiwan
Prior art keywords
hole
support
insulating member
electrode
substrate
Prior art date
Application number
TW112139908A
Other languages
English (en)
Chinese (zh)
Inventor
山口伸
佐藤大樹
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202433655A publication Critical patent/TW202433655A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW112139908A 2022-10-24 2023-10-19 基板支持器及電漿處理裝置 TW202433655A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202263418682P 2022-10-24 2022-10-24
US63/418,682 2022-10-24
WOPCT/JP2023/037424 2023-10-16
PCT/JP2023/037424 WO2024090276A1 (ja) 2022-10-24 2023-10-16 基板支持器及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
TW202433655A true TW202433655A (zh) 2024-08-16

Family

ID=90830683

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112139908A TW202433655A (zh) 2022-10-24 2023-10-19 基板支持器及電漿處理裝置

Country Status (6)

Country Link
US (1) US20250246416A1 (https=)
JP (1) JPWO2024090276A1 (https=)
KR (1) KR20250095635A (https=)
CN (1) CN120077479A (https=)
TW (1) TW202433655A (https=)
WO (1) WO2024090276A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
JP5984504B2 (ja) * 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
JP7149739B2 (ja) 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
JP7232404B2 (ja) * 2018-07-30 2023-03-03 Toto株式会社 静電チャック
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7534292B2 (ja) * 2018-11-01 2024-08-14 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
JP7204893B2 (ja) * 2019-03-29 2023-01-16 京セラ株式会社 ガスプラグ、静電吸着用部材およびプラズマ処理装置
JP7387764B2 (ja) * 2019-05-24 2023-11-28 アプライド マテリアルズ インコーポレイテッド 結合層の保護が改善された基板支持キャリア
US20200411355A1 (en) * 2019-06-28 2020-12-31 Applied Materials, Inc. Apparatus for reduction or prevention of arcing in a substrate support
KR102768789B1 (ko) * 2021-02-04 2025-02-14 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 부재 및 그 제법

Also Published As

Publication number Publication date
US20250246416A1 (en) 2025-07-31
JPWO2024090276A1 (https=) 2024-05-02
CN120077479A (zh) 2025-05-30
WO2024090276A1 (ja) 2024-05-02
KR20250095635A (ko) 2025-06-26

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