TW202432638A - 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 Download PDF

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Publication number
TW202432638A
TW202432638A TW112145666A TW112145666A TW202432638A TW 202432638 A TW202432638 A TW 202432638A TW 112145666 A TW112145666 A TW 112145666A TW 112145666 A TW112145666 A TW 112145666A TW 202432638 A TW202432638 A TW 202432638A
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Taiwan
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radiation
formula
alkyl group
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TW112145666A
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English (en)
Chinese (zh)
Inventor
川端健志
後藤研由
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日商富士軟片股份有限公司
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Publication of TW202432638A publication Critical patent/TW202432638A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW112145666A 2022-11-30 2023-11-24 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 TW202432638A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-192071 2022-11-30
JP2022192071 2022-11-30

Publications (1)

Publication Number Publication Date
TW202432638A true TW202432638A (zh) 2024-08-16

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ID=91323482

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TW112145666A TW202432638A (zh) 2022-11-30 2023-11-24 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法

Country Status (3)

Country Link
JP (1) JPWO2024116797A1 (https=)
TW (1) TW202432638A (https=)
WO (1) WO2024116797A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH087441B2 (ja) * 1986-12-29 1996-01-29 凸版印刷株式会社 ポジ型高感度放射線感応性レジスト
JP3542106B2 (ja) * 1999-05-11 2004-07-14 日本電信電話株式会社 パターン形成方法およびポジ型レジスト組成物
JP2001201853A (ja) * 2000-01-17 2001-07-27 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2001330954A (ja) * 2000-05-24 2001-11-30 Fuji Photo Film Co Ltd ポジ型画像形成材料
JP2004093768A (ja) * 2002-08-30 2004-03-25 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4480141B2 (ja) * 2004-06-28 2010-06-16 キヤノン株式会社 インクジェット記録ヘッドの製造方法
US10831102B2 (en) * 2018-03-05 2020-11-10 International Business Machines Corporation Photoactive polymer brush materials and EUV patterning using the same

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JPWO2024116797A1 (https=) 2024-06-06
WO2024116797A1 (ja) 2024-06-06

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