TW202409224A - SiC基板之製造方法以及用於研磨SiC基板之研磨材漿料 - Google Patents

SiC基板之製造方法以及用於研磨SiC基板之研磨材漿料 Download PDF

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Publication number
TW202409224A
TW202409224A TW112123483A TW112123483A TW202409224A TW 202409224 A TW202409224 A TW 202409224A TW 112123483 A TW112123483 A TW 112123483A TW 112123483 A TW112123483 A TW 112123483A TW 202409224 A TW202409224 A TW 202409224A
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TW
Taiwan
Prior art keywords
polishing
sic substrate
slurry
abrasive slurry
sic
Prior art date
Application number
TW112123483A
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English (en)
Chinese (zh)
Inventor
中邨拓馬
猿渡康允
原周平
Original Assignee
日商三井金屬鑛業股份有限公司
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Application filed by 日商三井金屬鑛業股份有限公司 filed Critical 日商三井金屬鑛業股份有限公司
Publication of TW202409224A publication Critical patent/TW202409224A/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW112123483A 2022-06-27 2023-06-21 SiC基板之製造方法以及用於研磨SiC基板之研磨材漿料 TW202409224A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-102368 2022-06-27
JP2022102368 2022-06-27

Publications (1)

Publication Number Publication Date
TW202409224A true TW202409224A (zh) 2024-03-01

Family

ID=89382203

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112123483A TW202409224A (zh) 2022-06-27 2023-06-21 SiC基板之製造方法以及用於研磨SiC基板之研磨材漿料

Country Status (3)

Country Link
JP (1) JPWO2024004752A1 (fr)
TW (1) TW202409224A (fr)
WO (1) WO2024004752A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103890127B (zh) * 2011-10-13 2015-09-09 三井金属矿业株式会社 研磨剂浆料及研磨方法
WO2013088928A1 (fr) * 2011-12-14 2013-06-20 旭硝子株式会社 Agent de nettoyage et procédé de préparation d'un substrat monocristallin de carbure de silicium
WO2018116521A1 (fr) * 2016-12-22 2018-06-28 三井金属鉱業株式会社 Liquide de polissage et procédé de polissage
WO2020255921A1 (fr) * 2019-06-17 2020-12-24 株式会社フジミインコーポレーテッド Composition de polissage

Also Published As

Publication number Publication date
WO2024004752A1 (fr) 2024-01-04
JPWO2024004752A1 (fr) 2024-01-04

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