TW202405942A - 用於半導體製造的蝕刻方法 - Google Patents

用於半導體製造的蝕刻方法 Download PDF

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Publication number
TW202405942A
TW202405942A TW112111227A TW112111227A TW202405942A TW 202405942 A TW202405942 A TW 202405942A TW 112111227 A TW112111227 A TW 112111227A TW 112111227 A TW112111227 A TW 112111227A TW 202405942 A TW202405942 A TW 202405942A
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TW
Taiwan
Prior art keywords
substrate
processing
dielectric layer
phosphorus
hydrogen
Prior art date
Application number
TW112111227A
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English (en)
Chinese (zh)
Inventor
蔡宇浩
張度
明梅 王
大類貴俊
高橋基
横井雅彦
田中康基
木原嘉英
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202405942A publication Critical patent/TW202405942A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW112111227A 2022-03-25 2023-03-24 用於半導體製造的蝕刻方法 TW202405942A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/704,372 US12400863B2 (en) 2022-03-25 2022-03-25 Method for etching for semiconductor fabrication
US17/704,372 2022-03-25

Publications (1)

Publication Number Publication Date
TW202405942A true TW202405942A (zh) 2024-02-01

Family

ID=88096309

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112111227A TW202405942A (zh) 2022-03-25 2023-03-24 用於半導體製造的蝕刻方法

Country Status (6)

Country Link
US (1) US12400863B2 (https=)
JP (1) JP2025509218A (https=)
KR (1) KR20240160105A (https=)
CN (1) CN118613901A (https=)
TW (1) TW202405942A (https=)
WO (1) WO2023183539A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025170896A1 (en) * 2024-02-07 2025-08-14 Lam Research Corporation Selective etch of stack using an iodine containing component

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867218A (en) 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
KR100485388B1 (ko) 2003-02-28 2005-04-27 삼성전자주식회사 트렌치 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2014049466A (ja) 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
US10246772B2 (en) * 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
TWI692799B (zh) * 2015-12-18 2020-05-01 美商應用材料股份有限公司 清潔方法
US10541144B2 (en) * 2017-12-18 2020-01-21 Lam Research Corporation Self-assembled monolayers as an etchant in atomic layer etching
SG10202010798QA (en) 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus

Also Published As

Publication number Publication date
JP2025509218A (ja) 2025-04-11
US12400863B2 (en) 2025-08-26
KR20240160105A (ko) 2024-11-08
US20230307242A1 (en) 2023-09-28
WO2023183539A1 (en) 2023-09-28
CN118613901A (zh) 2024-09-06

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