CN118613901A - 用于半导体制造的蚀刻方法 - Google Patents
用于半导体制造的蚀刻方法 Download PDFInfo
- Publication number
- CN118613901A CN118613901A CN202380019266.8A CN202380019266A CN118613901A CN 118613901 A CN118613901 A CN 118613901A CN 202380019266 A CN202380019266 A CN 202380019266A CN 118613901 A CN118613901 A CN 118613901A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- phosphorus
- substrate
- etching
- polar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/704,372 US12400863B2 (en) | 2022-03-25 | 2022-03-25 | Method for etching for semiconductor fabrication |
| US17/704,372 | 2022-03-25 | ||
| PCT/US2023/016163 WO2023183539A1 (en) | 2022-03-25 | 2023-03-23 | Method for etching for semiconductor fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118613901A true CN118613901A (zh) | 2024-09-06 |
Family
ID=88096309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380019266.8A Pending CN118613901A (zh) | 2022-03-25 | 2023-03-23 | 用于半导体制造的蚀刻方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12400863B2 (https=) |
| JP (1) | JP2025509218A (https=) |
| KR (1) | KR20240160105A (https=) |
| CN (1) | CN118613901A (https=) |
| TW (1) | TW202405942A (https=) |
| WO (1) | WO2023183539A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025170896A1 (en) * | 2024-02-07 | 2025-08-14 | Lam Research Corporation | Selective etch of stack using an iodine containing component |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3867218A (en) | 1973-04-25 | 1975-02-18 | Philips Corp | Method of etching a pattern in a silicon nitride layer |
| KR100485388B1 (ko) | 2003-02-28 | 2005-04-27 | 삼성전자주식회사 | 트렌치 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP2014049466A (ja) | 2012-08-29 | 2014-03-17 | Tokyo Electron Ltd | エッチング処理方法及び基板処理装置 |
| US10246772B2 (en) * | 2015-04-01 | 2019-04-02 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices |
| TWI692799B (zh) * | 2015-12-18 | 2020-05-01 | 美商應用材料股份有限公司 | 清潔方法 |
| US10541144B2 (en) * | 2017-12-18 | 2020-01-21 | Lam Research Corporation | Self-assembled monolayers as an etchant in atomic layer etching |
| SG10202010798QA (en) | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
-
2022
- 2022-03-25 US US17/704,372 patent/US12400863B2/en active Active
-
2023
- 2023-03-23 JP JP2024552716A patent/JP2025509218A/ja active Pending
- 2023-03-23 CN CN202380019266.8A patent/CN118613901A/zh active Pending
- 2023-03-23 KR KR1020247028996A patent/KR20240160105A/ko active Pending
- 2023-03-23 WO PCT/US2023/016163 patent/WO2023183539A1/en not_active Ceased
- 2023-03-24 TW TW112111227A patent/TW202405942A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025509218A (ja) | 2025-04-11 |
| US12400863B2 (en) | 2025-08-26 |
| KR20240160105A (ko) | 2024-11-08 |
| US20230307242A1 (en) | 2023-09-28 |
| WO2023183539A1 (en) | 2023-09-28 |
| TW202405942A (zh) | 2024-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |