JP2025509218A - 半導体製造のためのエッチング方法 - Google Patents

半導体製造のためのエッチング方法 Download PDF

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Publication number
JP2025509218A
JP2025509218A JP2024552716A JP2024552716A JP2025509218A JP 2025509218 A JP2025509218 A JP 2025509218A JP 2024552716 A JP2024552716 A JP 2024552716A JP 2024552716 A JP2024552716 A JP 2024552716A JP 2025509218 A JP2025509218 A JP 2025509218A
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JP
Japan
Prior art keywords
dielectric layer
gas
phosphorus
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024552716A
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English (en)
Japanese (ja)
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JP2025509218A5 (https=
Inventor
ツァイ，ユ‐ハオ
ジャン，ドゥ
ワン，ミンメイ
貴俊 大類
基 高橋
雅彦 横井
康基 田中
嘉英 木原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron US Holdings Inc filed Critical Tokyo Electron US Holdings Inc
Publication of JP2025509218A publication Critical patent/JP2025509218A/ja
Publication of JP2025509218A5 publication Critical patent/JP2025509218A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2024552716A 2022-03-25 2023-03-23 半導体製造のためのエッチング方法 Pending JP2025509218A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/704,372 US12400863B2 (en) 2022-03-25 2022-03-25 Method for etching for semiconductor fabrication
US17/704,372 2022-03-25
PCT/US2023/016163 WO2023183539A1 (en) 2022-03-25 2023-03-23 Method for etching for semiconductor fabrication

Publications (2)

Publication Number Publication Date
JP2025509218A true JP2025509218A (ja) 2025-04-11
JP2025509218A5 JP2025509218A5 (https=) 2026-03-11

Family

ID=88096309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024552716A Pending JP2025509218A (ja) 2022-03-25 2023-03-23 半導体製造のためのエッチング方法

Country Status (6)

Country Link
US (1) US12400863B2 (https=)
JP (1) JP2025509218A (https=)
KR (1) KR20240160105A (https=)
CN (1) CN118613901A (https=)
TW (1) TW202405942A (https=)
WO (1) WO2023183539A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025170896A1 (en) * 2024-02-07 2025-08-14 Lam Research Corporation Selective etch of stack using an iodine containing component

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867218A (en) 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
KR100485388B1 (ko) 2003-02-28 2005-04-27 삼성전자주식회사 트렌치 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2014049466A (ja) 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
US10246772B2 (en) * 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
TWI692799B (zh) * 2015-12-18 2020-05-01 美商應用材料股份有限公司 清潔方法
US10541144B2 (en) * 2017-12-18 2020-01-21 Lam Research Corporation Self-assembled monolayers as an etchant in atomic layer etching
SG10202010798QA (en) 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus

Also Published As

Publication number Publication date
US12400863B2 (en) 2025-08-26
KR20240160105A (ko) 2024-11-08
US20230307242A1 (en) 2023-09-28
WO2023183539A1 (en) 2023-09-28
CN118613901A (zh) 2024-09-06
TW202405942A (zh) 2024-02-01

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