TW202404729A - 雷射退火裝置、雷射退火方法、雷射退火程式 - Google Patents

雷射退火裝置、雷射退火方法、雷射退火程式 Download PDF

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Publication number
TW202404729A
TW202404729A TW112126492A TW112126492A TW202404729A TW 202404729 A TW202404729 A TW 202404729A TW 112126492 A TW112126492 A TW 112126492A TW 112126492 A TW112126492 A TW 112126492A TW 202404729 A TW202404729 A TW 202404729A
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TW
Taiwan
Prior art keywords
laser
semiconductor wafer
pulse
activation
temperature
Prior art date
Application number
TW112126492A
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English (en)
Chinese (zh)
Inventor
萬雅史
岡田康弘
Original Assignee
日商住友重機械工業股份有限公司
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Application filed by 日商住友重機械工業股份有限公司 filed Critical 日商住友重機械工業股份有限公司
Publication of TW202404729A publication Critical patent/TW202404729A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
TW112126492A 2022-07-19 2023-07-17 雷射退火裝置、雷射退火方法、雷射退火程式 TW202404729A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-114798 2022-07-19
JP2022114798 2022-07-19

Publications (1)

Publication Number Publication Date
TW202404729A true TW202404729A (zh) 2024-02-01

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ID=89617510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112126492A TW202404729A (zh) 2022-07-19 2023-07-17 雷射退火裝置、雷射退火方法、雷射退火程式

Country Status (2)

Country Link
TW (1) TW202404729A (fr)
WO (1) WO2024018786A1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590880B2 (ja) * 2003-06-24 2010-12-01 富士電機システムズ株式会社 半導体素子の製造方法
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置

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Publication number Publication date
WO2024018786A1 (fr) 2024-01-25

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