WO2024018786A1 - Appareil de recuit laser, procédé de recuit laser et programme de recuit laser - Google Patents

Appareil de recuit laser, procédé de recuit laser et programme de recuit laser Download PDF

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Publication number
WO2024018786A1
WO2024018786A1 PCT/JP2023/022020 JP2023022020W WO2024018786A1 WO 2024018786 A1 WO2024018786 A1 WO 2024018786A1 JP 2023022020 W JP2023022020 W JP 2023022020W WO 2024018786 A1 WO2024018786 A1 WO 2024018786A1
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WO
WIPO (PCT)
Prior art keywords
laser
semiconductor wafer
pulse
temperature
activation
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PCT/JP2023/022020
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English (en)
Japanese (ja)
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雅史 萬
康弘 岡田
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住友重機械工業株式会社
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Publication of WO2024018786A1 publication Critical patent/WO2024018786A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Definitions

  • the present invention relates to a laser annealing device and the like.
  • Patent Document 1 discloses a laser annealing technique in which a semiconductor wafer is irradiated with laser light oscillated by a laser device. This technology, which aims to form extremely shallow p-n junctions, activates dopants added just below the surface of the semiconductor wafer by irradiating it with laser light strong enough not to melt the semiconductor wafer. Further, the subsequent "low temperature rapid thermal annealing" repairs damage to the crystals of the semiconductor wafer.
  • laser annealing unlike Patent Document 1, it is also common to repair damage caused by dopant ion implantation by melting the surface of the semiconductor wafer. Thus, laser annealing has two different roles: repairing damage by melting the surface of the semiconductor wafer and activating dopants implanted into the semiconductor wafer. As disclosed in Patent Document 2, in order to effectively achieve surface melting and subsurface activation, multiple different modes of laser light are required, and typically multiple different laser devices are required. It was necessary to prepare.
  • the present invention has been made in view of these circumstances, and it is an object of the present invention to provide a laser annealing device and the like that can effectively melt the surface of a semiconductor wafer and activate the subsurface of the semiconductor wafer using a single pulse laser device. purpose.
  • a laser annealing apparatus irradiates a semiconductor wafer with laser pulses oscillated by a pulsed laser apparatus, and heats the surface of the semiconductor wafer above its melting point using a plurality of laser pulses.
  • a surface melting step in which the semiconductor wafer is melted, and a laser pulse is continuously irradiated to the semiconductor wafer from the surface melting step, and the subsurface of the semiconductor wafer is raised to a predetermined activation temperature or higher for at least a predetermined time using a plurality of laser pulses. heating and activating dopants added below the surface of the semiconductor wafer.
  • one pulsed laser device continues to irradiate the semiconductor wafer with laser pulses through successive surface melting steps and activation steps, thereby performing both surface melting and subsurface activation.
  • the surface of the semiconductor wafer melted in the surface melting step continues to be intermittently irradiated with laser pulses even in the activation step, but due to heat radiation from the surface during the non-pulse period when the laser pulse is not irradiated, the surface of the semiconductor wafer melted during the activation step. This prevents the surface of the semiconductor wafer from becoming overheated. Note that the surface melting step and the activation step may overlap in time.
  • Another aspect of the present invention is a laser annealing method.
  • This method consists of a surface melting step in which the semiconductor wafer is irradiated with laser pulses emitted by a pulsed laser device, and the surface of the semiconductor wafer is heated to a temperature higher than the melting point by multiple laser pulses and melted, and the surface melting step is continued.
  • the semiconductor wafer is irradiated with a laser pulse, and the temperature below the surface of the semiconductor wafer is raised to a predetermined activation temperature or higher for at least a predetermined period of time using multiple laser pulses, thereby activating the dopants added below the surface of the semiconductor wafer. an activation step of activating the method.
  • the present invention also encompasses any combination of the above components and the conversion of these expressions into methods, devices, systems, recording media, computer programs, etc.
  • melting on the surface of a semiconductor wafer and activation below the surface of the semiconductor wafer can be effectively achieved with one pulse laser device.
  • FIG. 1 is a perspective view schematically showing the configuration of a laser annealing device.
  • the configuration of an optical fiber, which is a main part of a fiber laser device, and the principles of laser pulse generation and amplification in the optical fiber are schematically shown.
  • the configuration of a pulse laser device as a fiber laser device is schematically shown.
  • 3 shows the time course of the surface temperature of a semiconductor wafer irradiated with various laser beams.
  • FIG. 1 is a perspective view schematically showing the configuration of a laser annealing apparatus 1 according to an embodiment of the present invention.
  • the laser annealing device 1 is a device that performs an annealing process (heating process) by irradiating the semiconductor wafer 3 with laser pulses generated by a pulsed laser device 2 .
  • the semiconductor wafer 3 fixedly mounted on the wafer table 31 can be driven integrally with the wafer table 31 in the illustrated x direction by a stage device 4, which will be described later. Further, the laser pulse (laser light) oscillated by the pulse laser device 2 can be scanned in the y direction orthogonal to the x direction by a galvano scanner 14, which will be described later. Laser pulses (laser light) scanned in the y direction by the galvano scanner 14 are reflected by a mirror 16, which will be described later, and are incident on the semiconductor wafer 3 in the z direction orthogonal to the x and y directions.
  • the x direction which is the driving direction of the semiconductor wafer 3 is parallel to the X-axis direction (X direction)
  • the y direction which is the scanning direction of the laser pulse (laser light)
  • the z direction which is the direction of incidence of the laser pulse (laser light) on the wafer 3, is parallel to the Z-axis direction (Z direction).
  • the x direction and the X direction will also be referred to as the vertical direction
  • the y direction and the Y direction will also be referred to as the horizontal direction
  • the z direction and the Z direction will also be referred to as the height direction.
  • the pulse laser device 2 is a laser device that oscillates laser pulses at a frequency of 100kHz or higher.
  • the frequency of the laser pulse oscillated by the pulsed laser device 2 is, for example, between 100kHz and 10MHz, and between 500kHz and 5MHz. , more preferably between 700kHz and 3MHz.
  • the frequency of the laser pulse oscillated by the pulse laser device 2 is 800 kHz will be described.
  • the pulse laser device 2 is configured by, for example, a fiber laser device that oscillates laser pulses using an optical fiber.
  • FIG. 2 schematically shows the configuration of an optical fiber 20, which is a main part of the fiber laser device, and the principle of generation and amplification of laser pulses LP in the optical fiber 20.
  • the optical fiber 20 includes a core 201 in the center, a first clad 202 provided around the core 201, and a second clad 203 provided around the first clad 202.
  • the refractive index of the core 201 is higher than the refractive index of the first cladding 202
  • the refractive index of the first cladding 202 is higher than the refractive index of the second cladding 203. That is, the refractive index of the optical fiber 20 is higher as it is closer to the center (core 201) and lower as it is closer to the periphery (second cladding 203).
  • Excitation light EL generated by a light emitting element such as a laser diode enters from one end of the optical fiber 20 (for example, the left end in FIG. 2).
  • This excitation light EL propagates inside the core 201 and the first cladding 202 while being totally reflected at the interface between the first cladding 202 and the second cladding 203.
  • Each time the excitation light EL passes through the core 201 it excites a rare earth element such as Yb added to the core 201, and generates stimulated emission light that becomes the source of the laser pulse LP (laser light).
  • the stimulated emission light generated in the core 201 propagates inside the core 201 while being totally reflected at the interface between the core 201 and the first cladding 202 .
  • mirrors such as total reflection mirrors such as FBG (Fiber Bragg Grating) and output mirrors are formed at both ends of the core 201, and the stimulated emission light that is repeatedly reflected between these mirrors is reflected back to the core.
  • a laser pulse LP laser light
  • This laser pulse LP is formed by being amplified while reciprocating inside the 201. This laser pulse LP is output to the outside of the optical fiber 20 from an output mirror formed at one end of the core 201 (for example, the right end in FIG. 2).
  • FIG. 3 schematically shows the configuration of a pulse laser device 2 as a fiber laser device including an optical fiber 20 as shown in FIG.
  • the pulse laser device 2 includes an excitation light supply section 21, a laser light generation section 22, and a laser light supply section 23.
  • the excitation light supply unit 21 includes a light emitting element 211 such as one or more laser diodes that emits light that is the source of the excitation light EL, and when a plurality of light emitting elements 211 are provided, combines the respective lights to generate the excitation light EL. It includes an optical coupling section 212 to be formed.
  • the excitation light supply section 21 supplies excitation light EL based on the light emitted by the light emitting element 211 to the laser light generation section 22 .
  • the laser light generation unit 22 includes the aforementioned optical fiber 20 to which the excitation light EL is supplied from the input end (left end in FIG. 3), and an input mirror 221 and an output mirror 222 formed at both ends thereof.
  • the input mirror 221 and the output mirror 222 are both formed by FBG at both ends of the core 201, for example. It is preferable that the reflectance of the input mirror 221 provided on the input side (excitation light supply section 21 side) is higher than the reflectance of the output mirror 222 provided on the output side (laser light supply section 23 side).
  • the input mirror 221 is preferably configured as a total reflection mirror that totally reflects the stimulated emission light inside the core 201, which is the source of the laser pulse LP (laser light), toward the output side.
  • the output mirror 222 reflects a part of the stimulated emission light inside the core 201 to the input side, and outputs the rest to the laser light supply section 23 .
  • the laser light supply section 23 includes an optical fiber 231 that guides the laser pulse LP (laser light) generated by the laser light generation section 22 to the output point OP of the pulse laser device 2.
  • the output point of the laser beam generation section 22 may be the output point OP of the pulsed laser device 2, and in that case, it is not necessary to provide the laser beam supply section 23.
  • the laser pulse LP is emitted from the output point OP of the pulse laser device 2 in the X direction.
  • a laser annealing device 1 that guides this laser pulse LP to a semiconductor wafer 3 to be irradiated includes a beam expander 11, a mirror 12, a beam shaping optical element 13, a galvano scanner 14, an f ⁇ lens 15, and a mirror 16. .
  • the beam expander 11 adjusts the laser pulse LP (laser light) emitted from the output point OP of the pulse laser device 2 to a predetermined size (diameter). For example, when the cross section of the laser pulse LP (laser light) emitted from the output point OP of the pulse laser device 2 is approximately circular with a diameter D0, the beam expander 11 adjusts the cross section of the laser pulse LP (laser light) to a predetermined shape. Convert (typically enlarge) into a substantially circular shape with diameter D1.
  • the beam expander 11 is composed of a plurality of lenses 111, 112, and 113.
  • lens 111 is a convex lens
  • lens 112 is a concave lens
  • lens 113 is a convex lens
  • the number and type of lenses and other optical elements constituting the beam expander 11 are arbitrary as long as the desired function and/or effect of adjusting the size of the laser pulse LP can be obtained.
  • the beam expander 11 may be composed of two or more convex lenses and one or more concave lenses arranged in any order, or may be composed only of three or more convex lenses.
  • the mirror 12 reflects the laser pulse LP whose size has been adjusted by the beam expander 11, and changes its traveling direction from the X direction to the Y direction.
  • the beam shaping optical element 13 shapes the laser pulse LP whose size has been adjusted by the beam expander 11, and adjusts its shape and/or intensity distribution.
  • the cross section of the laser pulse LP whose size has been adjusted by the beam expander 11 is approximately circular and has an intensity distribution that follows a Gaussian distribution or a normal distribution, but is shaped by the beam shaping optical element 13 to be approximately rectangular and have an approximately uniform intensity distribution. be done.
  • Such a beam shaping optical element 13 is constituted by, for example, a diffractive optical element (DOE).
  • DOE diffractive optical element
  • the galvano scanner 14 is a laser pulse scanning unit that scans the laser pulse LP shaped by the beam shaping optical element 13 in the y direction (Y direction).
  • the galvano scanner 14 includes a galvano mirror 141 that can reflect the laser pulse LP, and a motor 142 that rotates the galvano mirror 141 around the Z axis.
  • the motor 142 adjusts the rotational position or rotational angle of the galvano mirror 141 around the Z axis, so that the laser pulse LP incident on the galvano mirror 141 is reflected to an arbitrary position in the y direction.
  • the laser pulse scanning unit that scans the laser pulse LP in the y direction is not limited to the galvano scanner 14, but may also be configured by a polygon mirror scanner equipped with a polygon mirror that can be rotated, a MEMS (Micro Electro Mechanical Systems) mirror, etc. good.
  • the scanning direction of the laser pulse LP by the laser pulse scanning unit such as the galvano scanner 14 is not limited to the y direction (Y direction), but may be a direction intersecting the y direction (Y direction) such as the x direction (X direction). , the x direction (X direction) and the y direction (Y direction) may be used.
  • the laser pulse scanning unit such as the galvano scanner 14 can scan the laser pulse LP within the xy plane (XY plane), that is, within the plane of the semiconductor wafer 3, the semiconductor wafer 3 and the wafer table 31 are It is not necessary to provide a stage device 4 that is driven in a direction (X direction) or the like.
  • the f ⁇ lens 15 focuses the laser pulse LP scanned in the y direction (Y direction) by the galvano scanner 14 onto the semiconductor wafer 3 to be annealed.
  • a mirror 16 provided between the f ⁇ lens 15 and the semiconductor wafer 3 reflects the laser pulse LP in the X direction from the f ⁇ lens 15 and irradiates the semiconductor wafer 3 in the Z direction (z direction).
  • the laser pulse LP thus focused on the semiconductor wafer 3 by the f ⁇ lens 15 and the mirror 16 moves in the Y direction within the plane of the semiconductor wafer 3 by scanning in the Y direction by the galvano scanner 14.
  • the size of the laser pulse LP focused on the semiconductor wafer 3 can be arbitrarily designed, it is preferably between 0.10 mm square and 0.15 mm square, and more preferably between 0.12 mm square and 0.13 mm square.
  • the scanning speed of the laser pulse LP in the Y direction on the semiconductor wafer 3 surface can be arbitrarily designed; for example, 100 cm/s and 500 cm. It is preferably between 250 cm/s and 350 cm/s, more preferably between 250 cm/s and 350 cm/s.
  • the laser pulse LP moves relatively within the surface of the semiconductor wafer 3 in the X direction.
  • the laser pulse LP can be moved within the xy plane (in the XY plane), that is, the semiconductor wafer 3. Can scan in 3 planes.
  • the driving direction of the semiconductor wafer 3 by the stage device 4 is not limited to the x direction (X direction), but may also be a direction intersecting the x direction (X direction) such as the y direction (Y direction), or ) and the y direction (Y direction).
  • X direction x direction
  • Y direction y direction
  • a galvanometer that scans the laser pulse LP in the y direction (Y direction) etc.
  • a laser pulse scanning unit such as the scanner 14 may not be provided.
  • FIG. 4 shows the time course of the surface temperature of the semiconductor wafer 3 irradiated with various laser beams.
  • the solid line indicates the surface temperature when the laser pulse LP of high frequency (800 kHz in the illustrated example) oscillated by the fiber laser device as the pulse laser device 2 according to the present embodiment is irradiated.
  • the dashed line indicates the surface temperature when irradiated with a high peak power (typically several 100 kW) and low frequency (typically between 2 kHz and several 10 kHz) laser pulses emitted by conventional pulsed laser equipment. show.
  • the dashed-dotted line indicates the surface temperature when irradiated with a low peak power (typically several kW) and low frequency laser light emitted by a conventional diode laser device. Note that the peak power is the value obtained by dividing the pulse energy by the pulse width.
  • a high peak power, low frequency laser pulse emitted by a conventional pulse oscillation laser device shown by a broken line is used for the purpose of repairing damage caused by dopant ion implantation by melting the surface of the semiconductor wafer 3.
  • the semiconductor wafer 3 is made of general silicon, the surface will be melted by heating it above its melting point (1,410° C.).
  • the surface temperature of the semiconductor wafer 3 instantaneously rises to over 1,500°C due to the high peak power laser pulses emitted by the conventional pulsed laser device shown by the broken line.
  • the surface of the formed semiconductor wafer 3 is melted and damage is repaired.
  • the conventional laser pulse has a low frequency, the surface temperature of the semiconductor wafer 3 drops rapidly immediately after the laser pulse is irradiated. For this reason, the interior or subsurface of the semiconductor wafer 3 into which the dopant is implanted is not sufficiently heated, and the dopant is not activated.
  • a low peak power and low frequency laser beam oscillated by a conventional diode laser device shown by a dashed line is used. Since this laser beam has a low peak power, it cannot heat the surface of the semiconductor wafer 3 above its melting point, but it continuously heats the inside or under the surface of the semiconductor wafer 3 to activate the implanted dopant. can. In this way, a pulsed laser device (dashed line) is generally used for melting on the surface of the semiconductor wafer 3, and a diode laser device (dotted chain line) is used for activation below the surface of the semiconductor wafer 3. Met. Since it is necessary to prepare different laser devices for annealing for different purposes, this has led to an increase in the size and cost of the laser annealing device.
  • one pulse laser device 2 melts the surface of the semiconductor wafer 3 and melts the surface of the semiconductor wafer 3. Activation at the bottom can be effectively achieved.
  • the pulsed laser device 2 according to the present embodiment performs a surface melting step (a period of "surface melting” shown in the figure) in which the surface of the semiconductor wafer 3 is heated to a temperature higher than the melting point and melted by a plurality of laser pulses LP.
  • the semiconductor wafer 3 is irradiated with laser pulses LP, and the temperature below the surface of the semiconductor wafer 3 is raised to a predetermined activation temperature or higher for at least a predetermined period of time using a plurality of laser pulses LP. , an activation step (the illustrated "activation" period) for activating the dopant added below the surface of the semiconductor wafer 3.
  • the surface temperature of the semiconductor wafer 3 rises above the melting point (1,410° C.) by a large number of laser pulses LP that are intermittently irradiated at a high frequency (800 kHz in the illustrated example). Therefore, the surface of the semiconductor wafer 3 is melted, and damage caused by dopant ion implantation or the like is repaired.
  • the individual laser pulses LP do not have sufficient power to heat the surface of the semiconductor wafer 3 above the melting point, but the semiconductor wafer 3 is heated by being irradiated with high frequency. As a result of accumulation, the surface temperature can be raised above the melting point.
  • the surface melting step starts when the surface temperature of the semiconductor wafer 3 rises above the melting point, and ends when the surface temperature of the semiconductor wafer 3 falls below the melting point.
  • the laser pulse LP is scanned in the Y direction (y direction) on the semiconductor wafer 3 by the galvano scanner 14 as a laser pulse scanning unit, but the laser pulse LP having a width in the Y direction is scanned on the semiconductor wafer 3
  • the time required to pass through a point is substantially equal to the time of the surface melting step. Strictly speaking, the time from when the laser pulse LP starts hitting a point on the semiconductor wafer 3 until the surface temperature reaches the melting point, and the time from when the laser pulse LP passes a point on the semiconductor wafer 3 until the surface temperature falls below the melting point. Due to time constraints, there may be a slight time difference.
  • the semiconductor wafer 3 is irradiated with the laser pulse LP continuously from the surface melting step, so that the temperature inside or under the surface of the semiconductor wafer 3 into which the dopant is implanted is increased to a predetermined activation temperature or higher. , the dopant is activated.
  • the activation temperature may vary depending on the type of dopant and the material of the semiconductor wafer 3 (silicon, silicon carbide, gallium nitride, etc.), but the most common method is to implant an acceptor (P-type dopant) such as boron into a silicon semiconductor wafer 3. In a typical case, the temperature is about 1,000°C.
  • the temperature of that region is maintained at or above the activation temperature for a predetermined period of time.
  • This predetermined time may also vary depending on the type and amount of dopant and the material of the semiconductor wafer 3, but is typically about 10 ⁇ s.
  • the interior or subsurface region of the semiconductor wafer 3 into which the dopants have been implanted is heated to 1000° C. for at least 10 ⁇ s.
  • a typical goal is to increase the temperature above this level.
  • the activation step starts when the temperature of the activation region under the surface of the semiconductor wafer 3 into which the dopant is implanted rises above the activation temperature, and ends when the temperature of the activation region falls below the activation temperature. do. Since FIG. 4, which shows the surface temperature of the semiconductor wafer 3, does not show the temperature of the activation region below the surface, the start timing and end timing of the activation step are shown as a guide. Typically, the activation step is shorter than the surface fusing step, as shown. Additionally, the start timing of the activation step is typically later than the start timing of the surface melting step. Furthermore, the end timing of the activation step is substantially equal to the end timing of the surface melting step.
  • the temperature of the activation region in the semiconductor wafer 3 involved in the activation step is less likely to drop than the temperature of the surface of the semiconductor wafer 3 involved in the surface melting step.
  • the timing of the end of the surface melting step (the surface temperature decreases below the melting point) is considered to be slightly later than the end timing of the surface melting step (the surface temperature decreases below the melting point).
  • the activation step may be made longer than 10 ⁇ s.
  • the activation step can be lengthened by slowing down the scanning speed of the laser pulse LP in the Y direction (y direction) by the galvano scanner 14 as a laser pulse scanning unit.
  • the same effect can be obtained by setting the oscillation frequency of the laser pulse LP by the pulse laser device 2 higher than 800 kHz.
  • the surface melting step will inevitably be lengthened, but the surface of the semiconductor wafer 3 may become overheated due to heat radiation from the surface of the semiconductor wafer 3 during the non-pulse period when the intermittent laser pulse LP is not irradiated. (In the example shown, the surface temperature is kept below 2,000°C.) In this way, according to the present embodiment, the surface melting step can be appropriately performed regardless of the length of the activation step.
  • one pulsed laser device 2 continues to irradiate the semiconductor wafer 3 with laser pulses LP through the successive surface melting steps and activation steps, thereby combining melting on the surface and activation below the surface. You can do it.
  • each device and each method described in the embodiments can be realized by hardware resources or software resources, or by cooperation of hardware resources and software resources.
  • hardware resources for example, a processor, ROM, RAM, and various integrated circuits can be used.
  • software resources for example, programs such as operating systems and applications can be used.
  • the present invention relates to a laser annealing device and the like.
  • Laser annealing device 2. Pulse laser device, 3. Semiconductor wafer, 4. Stage device, 11. Beam expander, 13. Beam shaping optical element, 14. Galvano scanner, 20. Optical fiber, 22. Laser light generation unit, LP laser pulse.

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Abstract

Cet appareil de recuit laser réalise : une étape de fusion de surface pour irradier une tranche de semi-conducteur à l'aide d'impulsions laser (LP) oscillées par un dispositif laser à impulsions et faire fondre la surface de la tranche de semi-conducteur par chauffage de sa surface à un point de fusion ou à un point supérieur au moyen d'une pluralité d'impulsions laser (LP) ; et une étape d'activation pour irradier la tranche de semi-conducteur à l'aide des impulsions laser (LP) consécutivement à partir de l'étape de fusion de surface, et pour chauffer en outre la partie inférieure de la surface de la tranche de semi-conducteur à une température d'activation prédéterminée ou à une température supérieure au moyen de la pluralité d'impulsions laser (LP) pendant au moins une période prédéterminée, de telle sorte qu'un dopant ajouté à la partie inférieure de la surface de la tranche de semi-conducteur est activé. Dans l'étape d'activation, une région de jusqu'à 10 μm au-dessous de la surface de la tranche de semi-conducteur est chauffée à une température supérieure ou égale à 1 000 °C pendant au moins 10 μs.
PCT/JP2023/022020 2022-07-19 2023-06-14 Appareil de recuit laser, procédé de recuit laser et programme de recuit laser WO2024018786A1 (fr)

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JP2022114798 2022-07-19

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223301A (ja) * 2003-06-24 2005-08-18 Fuji Electric Device Technology Co Ltd 半導体素子の製造方法
JP2020202242A (ja) * 2019-06-07 2020-12-17 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223301A (ja) * 2003-06-24 2005-08-18 Fuji Electric Device Technology Co Ltd 半導体素子の製造方法
JP2020202242A (ja) * 2019-06-07 2020-12-17 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置

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