TW202402768A - 在烴基配位基中具有氧雜原子之輻射敏感性有機錫組成物及其應用 - Google Patents

在烴基配位基中具有氧雜原子之輻射敏感性有機錫組成物及其應用 Download PDF

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Publication number
TW202402768A
TW202402768A TW112118297A TW112118297A TW202402768A TW 202402768 A TW202402768 A TW 202402768A TW 112118297 A TW112118297 A TW 112118297A TW 112118297 A TW112118297 A TW 112118297A TW 202402768 A TW202402768 A TW 202402768A
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TW
Taiwan
Prior art keywords
organotin
carbon atoms
composition
formula
coating
Prior art date
Application number
TW112118297A
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English (en)
Chinese (zh)
Inventor
羅伯特E 伊列克
布萊恩J 卡迪諾
露西 蘇 曉 霍夫曼
斯蒂芬T 梅爾
Original Assignee
美商英培雅股份有限公司
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Application filed by 美商英培雅股份有限公司 filed Critical 美商英培雅股份有限公司
Publication of TW202402768A publication Critical patent/TW202402768A/zh

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D171/00Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22Tin compounds
    • C07F7/2208Compounds having tin linked only to carbon, hydrogen and/or halogen
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22Tin compounds
    • C07F7/2224Compounds having one or more tin-oxygen linkages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
TW112118297A 2022-05-18 2023-05-17 在烴基配位基中具有氧雜原子之輻射敏感性有機錫組成物及其應用 TW202402768A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263343331P 2022-05-18 2022-05-18
US63/343,331 2022-05-18

Publications (1)

Publication Number Publication Date
TW202402768A true TW202402768A (zh) 2024-01-16

Family

ID=88792199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112118297A TW202402768A (zh) 2022-05-18 2023-05-17 在烴基配位基中具有氧雜原子之輻射敏感性有機錫組成物及其應用

Country Status (6)

Country Link
US (1) US20230374338A1 (https=)
EP (1) EP4526734A1 (https=)
JP (1) JP2025517914A (https=)
KR (1) KR20250011129A (https=)
TW (1) TW202402768A (https=)
WO (1) WO2023225046A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019246254A1 (en) * 2018-06-21 2019-12-26 Inpria Corporation Stable solutions of monoalkyl tin alkoxides and their hydrolysis and condensation products
WO2023235534A1 (en) 2022-06-02 2023-12-07 Gelest, Inc. High purity alkyl tin compounds and manufacturing methods thereof
KR102703674B1 (ko) * 2022-08-02 2024-09-04 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20250040045A (ko) 2022-08-12 2025-03-21 젤리스트 인코퍼레이티드 불포화 치환기를 함유하는 고순도 주석 화합물 및 이의 제조 방법
US12607929B2 (en) * 2022-08-29 2026-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
US12606577B2 (en) 2022-09-28 2026-04-21 Gelest, Inc. Iodoalkyl tin compounds and preparation methods thereof
WO2025056568A1 (en) 2023-09-13 2025-03-20 Merck Patent Gmbh Intramolecular stabilized mono alkyl metal compounds with improved thermal and light stability and their use thereof
KR20250106992A (ko) * 2024-01-04 2025-07-11 삼성에스디아이 주식회사 패턴 형성 방법 및 포토레지스트 막
KR20250125796A (ko) * 2024-02-15 2025-08-22 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
WO2026052767A1 (en) 2024-09-09 2026-03-12 Merck Patent Gmbh Intramolecular stabilized mono alkyl metal alkoxides and their use thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide
US10787466B2 (en) * 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US12211691B2 (en) * 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
JP2023539735A (ja) * 2020-08-25 2023-09-19 インプリア・コーポレイション 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法

Also Published As

Publication number Publication date
KR20250011129A (ko) 2025-01-21
JP2025517914A (ja) 2025-06-12
US20230374338A1 (en) 2023-11-23
WO2023225046A9 (en) 2024-11-28
EP4526734A1 (en) 2025-03-26
WO2023225046A1 (en) 2023-11-23

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