TW202348825A - 用於選擇性金屬沉積的選擇性抑制 - Google Patents

用於選擇性金屬沉積的選擇性抑制 Download PDF

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Publication number
TW202348825A
TW202348825A TW112107265A TW112107265A TW202348825A TW 202348825 A TW202348825 A TW 202348825A TW 112107265 A TW112107265 A TW 112107265A TW 112107265 A TW112107265 A TW 112107265A TW 202348825 A TW202348825 A TW 202348825A
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Taiwan
Prior art keywords
metal
substrate
smi
lmi
processing
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TW112107265A
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English (en)
Chinese (zh)
Inventor
尤凱鴻
羅伯特 Ｄ 克拉克
米澤亮太
新實寬明
容候補呈
坎達巴拉 泰伯利
宮原孝広
科瑞 瓦伊達
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202348825A publication Critical patent/TW202348825A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H10W20/0765—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches the thin functional dielectric layers being temporary, e.g. sacrificial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW112107265A 2022-02-28 2023-03-01 用於選擇性金屬沉積的選擇性抑制 TW202348825A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202263315062P 2022-02-28 2022-02-28
US63/315,062 2022-02-28
US18/156,142 2023-01-18
US18/156,142 US12588435B2 (en) 2022-02-28 2023-01-18 Selective inhibition for selective metal deposition

Publications (1)

Publication Number Publication Date
TW202348825A true TW202348825A (zh) 2023-12-16

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TW112107265A TW202348825A (zh) 2022-02-28 2023-03-01 用於選擇性金屬沉積的選擇性抑制

Country Status (5)

Country Link
US (1) US12588435B2 (enExample)
JP (1) JP2025512235A (enExample)
KR (1) KR20240157662A (enExample)
TW (1) TW202348825A (enExample)
WO (1) WO2023164685A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121865857A (zh) * 2026-03-13 2026-04-14 上海稷以科技有限公司 一种间隙特征的填充方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240431025A1 (en) * 2023-06-26 2024-12-26 International Business Machines Corporation Corrosion resistant single damascene interconnects
WO2025217071A1 (en) * 2024-04-08 2025-10-16 Lam Research Corporation Isonitrile inhibitors in ald
CN118291951B (zh) * 2024-04-08 2025-02-25 合肥安德科铭半导体科技有限公司 一种有机小分子抑制剂及其在薄膜沉积中的应用方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242019B2 (en) 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
KR102711644B1 (ko) 2018-03-20 2024-09-27 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
KR102800886B1 (ko) 2018-08-23 2025-04-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
KR102759932B1 (ko) * 2018-10-10 2025-01-23 도쿄엘렉트론가부시키가이샤 반도체 소자의 함입형 형상부를 저-저항률 금속으로 충전하기 위한 방법
US11282745B2 (en) 2019-04-28 2022-03-22 Applied Materials, Inc. Methods for filling features with ruthenium
US20200347493A1 (en) 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
US11286556B2 (en) 2020-04-14 2022-03-29 Applied Materials, Inc. Selective deposition of titanium films
US20230245924A1 (en) 2020-06-23 2023-08-03 Lam Research Corporation Selective deposition using graphene as an inhibitor
US11094543B1 (en) 2020-12-04 2021-08-17 Tokyo Electron Limited Defect correction on metal resists

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121865857A (zh) * 2026-03-13 2026-04-14 上海稷以科技有限公司 一种间隙特征的填充方法

Also Published As

Publication number Publication date
WO2023164685A1 (en) 2023-08-31
JP2025512235A (ja) 2025-04-17
US12588435B2 (en) 2026-03-24
US20230274932A1 (en) 2023-08-31
KR20240157662A (ko) 2024-11-01

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