TW202347570A - 半導體製造裝置用構件 - Google Patents

半導體製造裝置用構件 Download PDF

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TW202347570A
TW202347570A TW112111847A TW112111847A TW202347570A TW 202347570 A TW202347570 A TW 202347570A TW 112111847 A TW112111847 A TW 112111847A TW 112111847 A TW112111847 A TW 112111847A TW 202347570 A TW202347570 A TW 202347570A
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小木曽裕佑
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日商日本碍子股份有限公司
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Abstract

本發明之半導體製造裝置用構件於AlN陶瓷基體之表面設有晶圓載置用突起。AlN陶瓷基體中未設突起之部分具有從表面至預定深度之表層區域及表層區域之下側的母材區域。預定深度為5μm以下。表層區域之含氧率高於母材區域之含氧率。

Description

半導體製造裝置用構件
本發明係有關於一種半導體製造裝置用構件。
以往，半導體製造裝置用構件已知有具備表面設有多個小突起之AlN陶瓷基體、埋設於AlN陶瓷基體之電阻發熱體者。晶圓以與多個小突起接觸之狀態載置於AlN陶瓷基體之表面。載置於AlN陶瓷基體之晶圓需盡可能地不混入雜質。考慮此點，在專利文獻1，提出了於小突起之側面具有線狀延伸的複數個雷射標記。藉如此進行，而防止晶粒從小突起脫落而產生粒子。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本專利公報第6960260號
［發明欲解決之課題］
然而，在專利文獻1，由於在小突起之側面線狀延伸的雷射標記形成為所謂之浮渣(暫時熔融之材料固化的部分)，故有浮渣造成粒子產生之虞。
本發明係為解決此種課題而作成，主目的係有效地防止粒子產生。 ［用以解決課題之手段］
［1］本發明之半導體製造裝置用構件於AlN陶瓷基體之表面設有晶圓載置用突起，該AlN陶瓷基體中未設該突起之部分的至少一部分具有從該表面至預定深度之表層區域及該表層區域之下側的母材區域，該預定深度為5μm以下，該表層區域之含氧率高於該母材區域之含氧率。
在此半導體製造裝置用構件，表層區域之含氧率高於母材區域之含氧率。藉此，設於AlN陶瓷基體之表面中未設突起的部分之至少一部分的表層區域比母材區域硬。因此，進行晶圓處理之際，可有效地防止粒子產生。
［2］在上述半導體製造裝置用構件(如該［1］之半導體製造裝置用構件)中，該表層區域之含氧率以該母材區域之含氧率的2.0倍以上為佳。
［3］在上述半導體製造裝置用構件(如該［1］或［2］之半導體製造裝置用構件)中，該表層區域以黑色化者為佳。如此一來，由於表層區域易吸收熱，故易釋出輻射熱。因此，易使晶圓溫度均一。
［4］在上述半導體製造裝置用構件(如該［1］至［3］中任一項之半導體製造裝置用構件)中，以在該表層區域看不到浮渣為佳。如此一來，由於看不到可能造成粒子產生之浮渣，故可更有效地防止粒子之產生。
［5］在上述半導體製造裝置用構件(如該［1］至［4］中任一項之半導體製造裝置用構件)中，該表層區域之質量比O/N以大於該母材區域之質量比O/N的值為佳。
［6］在上述半導體製造裝置用構件(如該［5］之半導體製造裝置用構件)中，該表層區域之質量比O/N以該母材區域之質量比O/N的2.2倍以上為更佳。
［7］在上述半導體製造裝置用構件(如該［1］至［6］中任一項之半導體製造裝置用構件)中，該表層區域之質量比Al/N以大於該母材區域之質量比Al/N的值為佳。
［8］在上述半導體製造裝置用構件(如該［1］至［7］中任一項之半導體製造裝置用構件)中，亦可該AlN陶瓷基體中未設該突起之部分具有該表層區域與該母材區域。
［用以實施發明之形態］
以下一面參照圖式，一面說明本發明之更佳實施形態。圖1係AlN加熱器10之俯視圖。圖2係圖1之A-A剖面圖。
在以下之說明中，「上」「下」並非表示絕對之位置關係，而是表示相對之位置關係。因此，依AlN加熱器10之方向，「上」「下」會變成「下」「上」、「左」「右」或「前」「後」。又，顯示數值範圍之「～」係用作包含記載於其前後之數值作為下限值及上限值之意。
本實施形態之AlN加熱器10係本發明之半導體製造裝置用構件的一例，於AlN陶瓷基體12之表面設有晶圓載置用突起(小突起14及密封環帶15)，於AlN陶瓷基體12之內部設有電極16。
AlN陶瓷基體12係以AlN為主成分之圓形燒結體。AlN陶瓷基體之尺寸係例如直徑200～450mm，厚度10～30mm。AlN陶瓷基體12除了含有AlN以外，還可含有來自助燒結劑之成分。AlN之助燒結劑可舉例如稀土金屬氧化物為例。稀土金屬氧化物可舉例如Y 2O 3或Yb 2O 3等為例。此外，「主成分」係指占50體積%以上(以70體積%以上為佳，以85體積%以上為更佳)之成分或全成分中體積比例最高之成分(以下相同)。
小突起14係於AlN陶瓷基體12之表面整面隔著間隔而設之多個扁平圓柱突起。小突起14之尺寸為例如直徑0.5～3mm，高度10～50μm。
密封環帶15係於AlN陶瓷基體12之表面，沿著AlN陶瓷基體12之外緣而設的環狀突起。密封環帶15設成包圍多個小突起14。密封環帶15之高度與小突起14之高度相同。
電極16係於AlN陶瓷基體12之內部設成與AlN陶瓷基體12之表面平行。在本實施形態，電極16係加熱器電極。加熱器電極係於從上觀看AlN陶瓷基體12時，在AlN陶瓷基體12整體從一端至另一端有電阻發熱體一筆劃地配線。電極16之材料可舉例如W、Mo等高熔點金屬或該等之碳化物為例。此外，所謂「平行」者除了完全平行之情形外，即使不完全平行，只要在容許之誤差(公差等)的範圍內，便可視為平行(以下相同)。
AlN陶瓷基體12中未設突起(小突起14及密封環帶15)之部分12A具有從表面至預定深度之表層區域12Aa、該表層區域12Aa之下側的母材區域12Ab。預定深度係5μm以下(以0.1～2.0μm為佳)。表層區域12Aa之含氧率以母材區域12Ab之含氧率的2.0倍以上為佳，以2.9倍以上為更佳。表層區域12Aa以黑色化者為佳。以在表層區域12Aa看不到浮渣為佳。表層區域12Aa之質量比O/N以大於母材區域12Ab之質量比O/N的值為佳，以母材區域12Ab之質量比O/N的2.2倍以上為更佳，以3.6倍以上為又更佳。表層區域12Aa之質量比Al/N以大於母材區域12Ab之質量比Al/N的值為佳，以母材區域12Ab之質量比Al/N的1.1倍以上為更佳，以1.2倍以上為又更佳。
接著，就AlN加熱器10之使用例作說明。首先，將AlN加熱器10設置於圖中未示之腔室內。然後，將晶圓載置於AlN加熱器10之表面。以多個小突起14之頂面及密封環帶15之頂面支持晶圓。之後，將外部加熱器電源連接於加熱器電極亦即電極16，而使電流流至電極16。藉此，電極16發熱而將晶圓加熱至預定溫度。從將AlN加熱器10於上下方向貫穿之圖中未示的氣體通路，將熱傳導氣體(例如He氣體)供給予被表層區域12Aa、多個小突起14、密封環帶15與晶圓包圍之空間。在此狀態下，對晶圓施行各種處理。處理結束後，結束電極16之通電，從AlN加熱器10之表面取下晶圓。
接著，就AlN加熱器10之製造例作說明。圖3係AlN加熱器10之製造過程圖。首先，準備圓板狀AlN陶瓷燒結體21，於此AlN陶瓷燒結體21之上表面將電極膏印刷成預定電極圖案，而形成加熱器電極前驅物26(圖3A)。電極膏係將有機溶媒與黏結劑加入電極材料粉末與AlN粉末之混合粉末中，進行混合、拌合而成。接著，將圓板狀AlN陶瓷成形體22積層成覆蓋加熱器電極前驅物26，作為積層體23(圖3B)。然後，藉著對該積層體23進行熱壓燒成，加熱器電極前驅物26會燒結而形成為電極16(加熱器電極)，此時將該加熱器電極前驅物26夾在其中的AlN陶瓷燒結體21與陶瓷成形體22會燒結而成為一體，形成為AlN陶瓷構造體24(圖3C)。
接著，研磨AlN陶瓷構造體24之表面而加工成鏡面，之後，對表面中要形成小突起14及密封環帶15之區域以外的區域掃描短脈衝雷射而進行磨耗加工。藉此，於AlN陶瓷構造體24之表面形成多個小突起14及密封環帶15。結果，AlN陶瓷構造體24形成為AlN陶瓷基體12，而獲得AlN加熱器10(圖3D)。小突起14及密封環帶15之頂面維持為鏡面。在磨耗加工，藉切斷原子間鍵結而去除物質，經去除物質之部分在結晶構造會產生變化而被改質。藉此，表層區域12Aa之含氧率為母材區域12Ab之含氧率的2.0倍以上，表層區域12Aa之質量比O/N及Al/N為大於母材區域12Ab之質量比O/N及Al/N之值。短脈衝雷射之脈衝寬度以奈秒級或其以下(皮秒級或飛秒級)為佳。在磨耗加工，經施行雷射加工之面由於改質而硬度增加，故可抑制粒子之產生，且可使表面之顏色黑色化。又，在磨耗加工，由於可抑制造成粒子產生的浮渣形成，故比起形成有浮渣之情形，可抑制粒子產生。再者，在磨耗加工，由於僅去除吸收了雷射之部分，故對小突起14及密封環帶15之熱影響會減少，而可使小突起14及密封環帶15之邊緣大約垂直。藉此，即使小突起14及密封環帶15磨損，仍可將該等與晶圓之接觸面積維持為一定。
在以上所說明之本實施形態的AlN加熱器10，AlN陶瓷基體12之表面中未設突起(小突起14及密封環帶15)之部分的表層區域12Aa之含氧率為母材區域12Ab之含氧率的2.0倍以上。藉此，表層區域12Aa比母材區域12Ab硬。因此，進行晶圓處理之際，可有效地防止粒子產生。
又，表層區域12Aa以黑色化者為佳。如此一來，由於表層區域12Aa易吸收熱，故易釋出輻射熱。因此，易使晶圓溫度均一。
再者，以在表層區域12Aa看不到浮渣為佳。如此一來，由於看不到可能造成粒子產生之浮渣，故可更有效地防止粒子產生。
又，表層區域12Aa之質量比O/N以大於母材區域12Ab之質量比O/N的值為佳，以該母材區域之質量比O/N的2.2倍以上為更佳。表層區域12Aa之質量比Al/N以大於母材區域12Ab之質量比Al/N的值為佳。
此外，本發明並不限於上述實施形態，只要屬於本發明之技術範圍，可以各種態樣實施是無須贅言的。
在上述實施形態，例示了於AlN陶瓷基體12內置加熱器電極作為電極16，但並未特別限於此。舉例而言，亦可內置靜電電極，或內置RF電極作為電極16。又，除了內置加熱器電極，另外內置靜電電極及/或RF電極也可以。
在上述實施形態，研磨AlN陶瓷構造體24之表面而加工成鏡面，之後，對表面中要形成突起(小突起14及密封環帶15)之區域以外的區域掃描短脈衝雷射而進行磨耗加工，但不限於此。舉例而言，亦可於製作AlN陶瓷構造體24後，研磨其表面前，對要形成突起之區域以外的區域掃描短脈衝雷射，進行磨耗加工，藉此，形成突起，之後，研磨突起之表面而加工成鏡面。又，就突起之形成而言，除了僅以雷射加工法來達成外，亦可將雷射加工法組合噴砂加工等其他加工法來實施突起之形成。舉例而言，亦可於製作AlN陶瓷構造體24後，如圖4A所示，以噴砂加工(以研磨材撞擊表面之處理)磨削表面中要形成突起之區域以外的區域，而形成小突起14及密封環帶15(圖4B)，對已磨削之區域照射雷射，而使該區域改質，形成表層區域12Aa而獲得AlN加熱器10(圖4C)。又，突起之頂面及/或側面亦需要改質時，亦可對突起之頂面及/或側面照射雷射。舉例而言，亦可對AlN加熱器10之小突起14及密封環帶15之頂面及側面掃描短脈衝雷射，進行磨耗加工(圖5A)，而於包含小突起14及密封環帶15之頂面及側面的AlN加熱器10之表面整面形成表層區域12Aa(圖5B)。此時，為了避免突起消失，以調整雷射之輸出為佳。
在上述實施形態，AlN陶瓷基體12中未設突起(小突起14及密封環帶15)之部分12A整體具有表層區域12Aa及母材區域12Ab，但並未特別限於此。舉例而言，亦可部分12A之一部分具有表層區域12Aa及母材區域12Ab。此種構造亦包含在本發明之技術範圍內。如此，由於只要未設突起之部分12A的至少一部分具有表層區域12Aa及母材區域12Ab，便包含在本發明之技術範圍內，故突起部分具有或不具有表層區域12Aa及母材區域Ab皆可。舉例而言，突起之頂面的至少一部分亦可具有表層區域12Aa及母材區域12Ab，突起之頂面亦可不具有表層區域12Aa與母材區域12Ab。又，突起之側面的至少一部分亦可具有表層區域12Aa與母材區域12Ab，突起之側面亦可不具有表層區域12Aa與母材區域12Ab。 ［實施例］
以下，就本發明之實施例作說明。此外，以下之實施例絲毫不限定本發明。
［參考例1］ 如以下進行，製成未內置電極之圓板狀AlN陶瓷基體(母材A、直徑320mm、厚度20mm)。首先，藉使用球磨機(圓筒篩)，將氮化鋁粉末(純度99.7%)100質量份、氧化釔5質量份、分散劑(聚羧酸系共聚合體)2質量份、分散媒(多元酸酯)30質量份混合14小時，而獲得了陶瓷漿料前驅物。藉對此陶瓷漿料前驅物加入異氰酸酯(4,4’-二苯甲烷-二異氰酸酯)4.5質量份、水0.1質量份、觸媒(6-二甲胺-1-已醇)0.4質量份後混合，而獲得了陶瓷漿料。將此陶瓷漿料流入具有圓板形內部空間之成形模具，藉異氰酸酯與水之反學化應，使有機黏結劑(乙酯樹脂)生成後，從成形模具取出硬化之成形體。以100℃將該成形體乾燥10小時，在氫氣環境下，以最高溫度1300℃進行脫脂及燒成，而獲得陶瓷燒成體。藉在氮氣中，以加壓力250kgf/cm 2、1860℃對該陶瓷燒成體進行熱壓燒成6小時，而製成AlN陶瓷基體。對所得之AlN陶瓷基體，以EDX分析，求出N、O、Al、Y之質量%。又，目視測定AlN陶瓷基體之顏色，並以三豐(Mitutoyo)製微小維克氏硬度測試機HM-211測定硬度。於表1顯示此等之結果。
［實施例1］ 利用皮秒雷射加工機，將母材A之表面進行了磨耗加工。皮秒雷射加工機一面使檢流計反射鏡之馬達與台之馬達驅動，一面以5μm間隔平行掃描基體表面，進行磨耗加工。將加工波長、掃描速度、脈衝寬度及雷射輸出設定為表1所示之值，將頻率設定為200kHz。加工次數為2次。加工結束後，調查AlN陶瓷基體之剖面後，結果分為表層區域(表面至0.5μm之變質成黑色的區域)與該表層區域之下側的母材區域。對表層區域，與母材A同樣地，求出N、O、Al、Y之質量%。又，求出了表層區域之含氧率對母材區域之含氧率的比例、表層區域之質量比O/N對母材區域之質量比O/N的比例、表層區域之質量比Al/N對母材區域之質量比Al/N的比例。再者，與母材A同樣地，測定表層區域之顏色及硬度。於表1顯示此等之結果。表層區域之硬度為670Hv，與母材區域之硬度(523Hv)相比，約1.28倍。如此，由於實施例1之表層區域的硬度比母材A(參考例1)硬，故與母材A相比，粒子抑制效果提高。又，以掃描電子顯微鏡(SEM)觀察實施例1之表層區域後，結果未看到浮渣。因此，與專利文獻1相比，粒子抑制效果提高。
［參考例2］ 以與母材A相同之方法，製成與母材A相同之尺寸的圓板狀AlN陶瓷基體(母材B)。對所得之AlN陶瓷基體，與母材A同樣地，求出N、O、Al、Y之質量%。由於母材B之批與母材A不同，故元素之質量%不同。又，與母材A同樣地測定AlN陶瓷基體之顏色與硬度。於表1顯示此等之結果。
［實施例2～4］ 利用奈秒雷射加工機，將母材B之表面進行了磨耗加工。奈秒雷射加工機一面使檢流計反射鏡之馬達與台之馬達驅動，一面以5μm間隔平行掃描基體表面，進行磨耗加工。在實施例2～4，將加工波長、掃描速度、脈衝寬度及雷射輸出分別設定為表1所示之值，將頻率設定為50kHz，加工次數為1次。加工結束後，調查AlN陶瓷基體之剖面後，結果分為表層區域與該表層區域之下側的母材區域。實施例2之表層區域為從表面至0.2μm之區域，實施例3之表層區域為從表面至0.3μm之區域，實施例4之表層區域為從表面至0.2μm之區域。對實施例2～4之各表層區域，與母材A同樣地，求出N、O、Al、Y之質量%。又，求出了表層區域之含氧率對母材區域之含氧率的比例、表層區域之質量比O/N對母材區域之質量比O/N的比例、表層區域之質量比Al/N對母材區域之質量比Al/N的比例。再者，與母材A同樣地，測定表層區域之顏色及硬度。於表1顯示此等之結果。表層區域之硬度為650～690Hv，與母材區域之硬度(560Hv)相比，約1.16～1.23倍。如此，由於實施例2～4之各表層區域的硬度比母材B(參考例2)硬，故與母材B相比，粒子抑制效果提高。又，以掃描電子顯微鏡(SEM)觀察實施例2～4之各表層區域後，結果未看到浮渣。因此，與專利文獻1相比，粒子抑制效果提高。
［參考例3］ 以與母材A相同之方法，製成與母材A相同之尺寸的圓板狀AlN陶瓷基體(母材C)。對所得之AlN陶瓷基體，與母材A同樣地，求出N、O、Al、Y之質量%。由於母材C之批與母材A不同，故元素之質量%不同。又，與母材A同樣地測定AlN陶瓷基體之顏色與硬度。於表1顯示此等之結果。
［實施例5、6］ 利用皮秒雷射加工機，將母材C之表面進行了磨耗加工。皮秒雷射加工機一面使檢流計反射鏡之馬達與台之馬達驅動，一面以5μm間隔平行掃描基體表面，進行磨耗加工。在實施例5、6，將加工波長、掃描速度、脈衝寬度及雷射輸出分別設定為表1所示之值，將頻率設定為200kHz，加工次數為1次。加工結束後，調查AlN陶瓷基體之剖面後，結果分為表層區域與該表層區域之下側的母材區域。實施例5、6之表層區域皆為從表面至0.5μm之區域。對實施例5、6之各表層區域，與母材A同樣地，求出N、O、Al、Y之質量%。又，求出了表層區域之含氧率對母材區域之含氧率的比例、表層區域之質量比O/N對母材區域之質量比O/N的比例、表層區域之質量比Al/N對母材區域之質量比Al/N的比例。再者，與母材A同樣地，測定表層區域之顏色及硬度。於表1顯示此等之結果。表層區域之硬度為459.9～635.9Hv，與母材區域之硬度(413Hv)相比，約1.11～1.54倍。如此，由於實施例5、6之各表層區域的硬度比母材C硬，故與母材C相比，粒子抑制效果提高。又，以掃描電子顯微鏡(SEM)觀察實施例5、6之各表層區域後，結果未看到浮渣。因此，與專利文獻1相比，粒子抑制效果提高。
［表1］
圖6係放大實施例1之AlN陶瓷基體的剖面之圖像，圖7係放大實施例2之AlN陶瓷基體的剖面之圖像。在圖6及圖7，比例尺整體(10個刻度量)之長度為1.00μm。
本申請案以2022年3月30日提申之日本專利申請案第2022-055112號為優先權主張之基礎，其所有內容藉引用而包含在本說明書中。 ［產業上之可利用性］
本發明可利用於處理晶圓的晶圓處理裝置等之半導體製造裝置用構件。
10:AlN加熱器 12:AlN陶瓷基體 12A:未設突起之部分 12Aa:表層區域 12Ab:母材區域 14:小突起 15:密封環帶 16:電極 21:AlN陶瓷燒結體 22:AlN陶瓷成形體 23:積層體 24:AlN陶瓷構造體 26:加熱器電極前驅物
圖1係AlN加熱器10之俯視圖。 圖2係圖1之A-A剖面圖。 圖3A～D係AlN加熱器10之製造過程圖。 圖4A～C係AlN加熱器10之製造過程圖。 圖5A～B係AlN加熱器10之製造過程圖。 圖6係放大實施例1之AlN陶瓷基體的剖面之圖像。 圖7係放大實施例2之AlN陶瓷基體的剖面之圖像。

Claims (8)

  1. 一種半導體製造裝置用構件，於AlN陶瓷基體之表面設有晶圓載置用突起， 該AlN陶瓷基體中未設該突起之部分的至少一部分具有從該表面至預定深度之表層區域及該表層區域之下側的母材區域，該預定深度為5μm以下，該表層區域之含氧率高於該母材區域之含氧率。
  2. 如請求項1之半導體製造裝置用構件，其中， 該表層區域之含氧率為該母材區域之含氧率的2.0倍以上。
  3. 如請求項1或2之半導體製造裝置用構件，其中， 該表層區域係黑色化。
  4. 如請求項1或2之半導體製造裝置用構件，其中， 在該表層區域看不到浮渣。
  5. 如請求項1或2之半導體製造裝置用構件，其中， 該表層區域之質量比O/N為大於該母材區域之質量比O/N的值。
  6. 如請求項5之半導體製造裝置用構件，其中， 該表層區域之質量比O/N為該母材區域之質量比O/N的2.2倍以上。
  7. 如請求項1或2之半導體製造裝置用構件，其中， 該表層區域之質量比Al/N為大於該母材區域之質量比Al/N的值。
  8. 如請求項1或2之半導體製造裝置用構件，其中， 該AlN陶瓷基體中未設該突起之部分具有該表層區域與該母材區域。
TW112111847A 2022-03-30 2023-03-29 半導體製造裝置用構件 TWI839171B (zh)

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