TW202341509A - 具有砷化銦吸收層的焦面陣列 - Google Patents
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- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 65
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000006096 absorbing agent Substances 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 6
- 238000003491 array Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000701 chemical imaging Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum antimony Chemical compound 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本發明關於焦面陣列,該焦面陣列具有:基板晶圓;n型砷化銦層,設置於該基板晶圓頂上;阻障層,設置在該基板晶圓頂上;及摻雜的n型層,設置在該阻障層頂上。本發明進一步關於一種焦面陣列,該焦面陣列具有:基板晶圓;n型砷化銦層,設置於該基板晶圓頂上;及p型砷化銦層,定位於該n型砷化銦層之第一表面處,該第一表面與該n型砷化銦與該基板晶圓的界面表面相對。
Description
本申請案根據專利法請求2021年11月30日提交的美國臨時申請案序號63/284,285和2022年2月28日提交的美國臨時申請案序號63/314,656的優先權權益,本申請案仰賴上述臨時申請案之內文且上述臨時申請案之內文全體以參考形式併入本文。
本案揭示內容大致上關於焦面陣列,並且更特定而言,關於具有砷化銦吸收層的焦面陣列。
目前,在高光譜影像(HSI)領域,僅有基於半導體材料合金汞鎘碲(HgCdTe或MCT)的感測器能夠同時感測來自可見光譜帶(即約400nm)直至短波紅外線光譜帶(即約2,500nm)的光子且還具有足夠量子效率及暗電流以用於HSI應用。MCT陣列是基於週期表II-VI族的元素,且在處理上非常困難且昂貴。世界上只有少數半導體製造廠能夠處理此材料系統。同樣,處理本身相當昂貴,且對那些交付HSI之系統造成龐大成本負擔。
在第一實施例中,一種焦面陣列包括:基板晶圓;n型砷化銦層,設置於該基板晶圓頂上;阻障層,設置在該基板晶圓頂上;及摻雜的n型層,設置在該阻障層頂上
本案揭示內容的第二實施例可以包括第一實施例,其中該基板晶圓是鎵銻。
本案揭示內容的第三實施例可以包括第一實施例,其中該基板晶圓是砷化銦。
本案揭示內容的第四實施例可以包括第一實施例,其中該基板晶圓是砷化鎵。
本案揭示內容的第五實施例可以包括第一實施例,其中該n型砷化銦層的厚度在2微米至8微米的範圍內。
本案揭示內容的第六實施例可以包括第一實施例,其中金屬層設置在該摻雜的n型層頂上。
本案揭示內容的第七實施例可以包括第一實施例,其中該n型砷化銦層偵測400nm至3微米的範圍內的波長。
本案揭示內容的第八實施例可以包括第一實施例,其中該阻障層是III-V族化合物半導體材料。
在第九實施例中,一種焦面陣列包括:基板晶圓;n型砷化銦層,設置於該基板晶圓頂上;及p型砷化銦層,定位於該n型砷化銦層之第一表面處,該第一表面與該n型砷化銦與該基板晶圓的界面表面相對。
本案揭示內容的第十實施例可以包括第九實施例,其中該基板晶圓是鎵銻。
本案揭示內容的第十一實施例可以包括第九實施例,其中該基板晶圓是砷化銦。
本案揭示內容的第十二實施例可以包括第九實施例,其中該基板晶圓是砷化鎵。
本案揭示內容的第十三實施例可以包括第九實施例,其中該n型砷化銦層的厚度在2微米至8微米的範圍內。
本案揭示內容的第十四實施例可以包括第九實施例,其中該n型砷化銦層偵測400nm至3微米的範圍內的波長。
本案揭示內容關於焦面陣列,更特定而言,關於具有砷化銦吸收層的焦面陣列。本案揭示內容使用基於週期表III-V族的不同材料系統,而非基於週期表II-VI族元素的當前MCT陣列,當前MCT陣列在處理上非常困難且昂貴。有利的是,本案揭示內容的實施例能夠在世界上眾多製造廠以低成本容易地加工。此外,本案揭示內容的實施例會具有與當前利用的MCT技術類似的量子效率和暗電流特性。
在圖1中描繪的一個實施例中,焦面陣列100包括基板晶圓102。在多個實施例中,基板晶圓102包括鎵銻。在多個實施例中,基板晶圓102包括砷化銦。在多個實施例中,基板晶圓102包括砷化鎵。
n型砷化銦層104設置在基板晶圓102頂上。n型砷化銦層104用作焦面陣列內的吸收層。在多個實施例中,n型砷化銦層104直接設置在基板晶圓102頂上。如本文所用,「直接設置在」第二材料「頂上」的第一材料不具有設置在第一材料和第二材料之間的中間層。在多個實施例中,n型砷化銦層104可以使用本領域已知的方法形成,該等方法包括但不限於化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)和原子層沉積(ALD)。在多個實施例中,n型砷化銦層104的厚度為約2微米至約8微米。在多個實施例中,n型砷化銦層104的厚度為約3微米至約8微米。在多個實施例中,n型砷化銦層104的厚度為約4微米至約8微米。在多個實施例中,n型砷化銦層104的厚度為約5微米至約8微米。在多個實施例中,n型砷化銦層104的厚度為約6微米至約8微米。在多個實施例中,n型砷化銦層104的厚度為約7微米至約8微米。
在多個實施例中,阻障層106設置在n型砷化銦層104頂上。在多個實施例中,阻障層106直接設置在n型砷化銦層104頂上。阻障層106用於防止電流流過n型砷化銦層104而到接觸件(如下文所述)。在多個實施例中,阻障層106可使用本領域已知的方法形成,該等方法包括但不限於化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)和原子層沉積(ALD)。在多個實施例中,阻障層106是III-V族化合物半導體材料,例如但不限於鋁銻(AlSb)。
摻雜的n型層108設置在阻障層106頂上。在多個實施例中,摻雜的n型層108直接設置在阻障層106頂上。在多個實施例中,摻雜的n型層108可使用本領域已知的方法形成,該等方法包括但不限於化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)和原子層沉積(ALD)。在多個實施例中,金屬化層110(例如鉑及/或金)設置在摻雜的n型層108的表面112上。在多個實施例中,金屬化層110可以使用本領域已知的方法形成,該等方法包括但不限於化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)和原子層沉積(ALD)。金屬化層110接觸金屬接觸件114(例如銦)。
在多個實施例中,穿過金屬化層110、摻雜的n型層108和阻障層106蝕刻溝槽116,以暴露n型砷化銦層104的表面。溝槽可以使用本領域已知的方法形成,該等方法包括但不限於濕蝕刻、選擇性蝕刻和電漿蝕刻。在蝕刻溝槽116之後,金屬接觸件114電連接到讀出積體電路(未示出)。
在圖2A至圖2B所描繪的實施例中,焦面陣列100包括基板晶圓102。在多個實施例中,基板晶圓102包括鎵銻。在多個實施例中,基板晶圓102包括砷化銦。在多個實施例中,基板晶圓102包括砷化鎵。n型砷化銦層104設置在基板晶圓102頂上。n型砷化銦層104用作焦面陣列內的吸收層。在多個實施例中,n型砷化銦層104直接設置在基板晶圓102頂上。在圖2A中描繪的實施例中,p型砷化銦層118定位於n型砷化銦的第一表面120處,該第一表面120與n型砷化銦和基板晶圓102的界面表面122相對。在多個實施例中,金屬化層110(例如鉑及/或金)設置在p型砷化銦層118上。金屬化層110接觸金屬接觸件114(例如銦)。在多個實施例中,穿過金屬化層110和p型砷化銦層118蝕刻溝槽116,以暴露n型砷化銦層104的表面。在蝕刻溝槽116之後,金屬接觸件114電連接到讀出積體電路(未示出)。在多個實施例中,p型砷化銦層118佈植於n型砷化銦層104的表面中。在多個實施例中,將p型砷化銦層118佈植達約至少0.5微米的深度。在多個實施例中,將p型砷化銦層118佈植達約至少1微米的深度。在多個實施例中,金屬化層110(例如鉑及/或金)設置在佈植的p型砷化銦層118上。金屬化層110接觸金屬接觸件114(例如銦)。金屬接觸件114電連接至讀出積體電路(未示出)。
雖然本文已經揭示示範性實施例,但是熟悉此技術者將理解,在不背離所附之申請專利範圍所涵蓋的發明的範疇的情況下,可在其中進行形式與細節的各種改變。
100:焦面陣列
102:基板晶圓
104:n型砷化銦層
106:阻障層
108:摻雜的n型層
110:金屬化層
112:表面
114:金屬接觸件
116:溝槽
118:p型砷化銦層
120:第一表面
122:界面表面
前述內容會由下文的範例實施例的更特定描述變得更清楚,該等實施例如所附圖式所繪示,其中相同的元件符號在不同的視圖中是指相同的部件。圖式不必然是按比例繪製,而是將重點放在說明示例性實施例上。
圖1描繪根據本案揭示內容的實施例的具有n型砷化銦吸收層的示範性焦面陣列。
圖2A至圖2B描繪根據本案揭示內容的實施例的具有n型砷化銦吸收層的替代的示範性焦面陣列。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:焦面陣列
102:基板晶圓
104:n型砷化銦層
106:阻障層
108:摻雜的n型層
110:金屬化層
112:表面
114:金屬接觸件
116:溝槽
Claims (14)
- 一種焦面陣列,包括: 一基板晶圓; 一n型砷化銦層,設置於該基板晶圓頂上; 一阻障層,設置在該基板晶圓頂上;及 一摻雜的n型層,設置在該阻障層頂上。
- 如請求項1所述之焦面陣列,其中該基板晶圓是鎵銻。
- 如請求項1所述之焦面陣列,其中該基板晶圓是砷化銦。
- 如請求項1所述之焦面陣列,其中該基板晶圓是砷化鎵。
- 如請求項1所述之焦面陣列,其中該n型砷化銦層的厚度在2微米至8微米的範圍內。
- 如請求項1所述之焦面陣列,其中一金屬層設置在該摻雜的n型層頂上。
- 如請求項1所述之焦面陣列,其中該n型砷化銦層偵測400nm至3微米的範圍內的波長。
- 如請求項1所述之焦面陣列,其中該阻障層是一III-V族化合物半導體材料。
- 一種焦面陣列,包括: 一基板晶圓; 一n型砷化銦層,設置於該基板晶圓頂上;及 一p型砷化銦層,定位於該n型砷化銦層之一第一表面處,該第一表面與該n型砷化銦與該基板晶圓的一界面表面相對。
- 如請求項9所述之焦面陣列,其中該基板晶圓是鎵銻。
- 如請求項9所述之焦面陣列,其中該基板晶圓是砷化銦。
- 如請求項9所述之焦面陣列,其中該基板晶圓是砷化鎵。
- 如請求項9所述之焦面陣列,其中該n型砷化銦層的厚度在2微米至8微米的範圍內。
- 如請求項9所述之焦面陣列,其中該n型砷化銦層偵測400nm至3微米的範圍內的波長。
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US8217480B2 (en) * | 2010-10-22 | 2012-07-10 | California Institute Of Technology | Barrier infrared detector |
US9024296B2 (en) * | 2013-01-04 | 2015-05-05 | Mani Sundaram | Focal plane array with pixels defined by modulation of surface Fermi energy |
US9111830B1 (en) * | 2013-05-22 | 2015-08-18 | Sensors Unlimited, Inc. | Perforated blocking layer for enhanced broad band response in a focal plane array |
US10424608B1 (en) * | 2018-01-31 | 2019-09-24 | Hrl Laboratories, Llc | Fabrication of polycrystalline semiconductor infrared detector |
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