TW202336927A - 用於製作移轉壓電層用供體底材的方法和將壓電層移轉到載體底材的方法 - Google Patents

用於製作移轉壓電層用供體底材的方法和將壓電層移轉到載體底材的方法 Download PDF

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Publication number
TW202336927A
TW202336927A TW111149570A TW111149570A TW202336927A TW 202336927 A TW202336927 A TW 202336927A TW 111149570 A TW111149570 A TW 111149570A TW 111149570 A TW111149570 A TW 111149570A TW 202336927 A TW202336927 A TW 202336927A
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TW
Taiwan
Prior art keywords
substrate
piezoelectric
layer
donor
donor substrate
Prior art date
Application number
TW111149570A
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English (en)
Chinese (zh)
Inventor
阿弗雷德 塞德里克 查爾斯
摩根 洛基歐
席利 巴瞿
馬賽爾 伯克卡特
路西那 卡佩羅
Original Assignee
法商索泰克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 法商索泰克公司 filed Critical 法商索泰克公司
Publication of TW202336927A publication Critical patent/TW202336927A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
TW111149570A 2022-01-17 2022-12-22 用於製作移轉壓電層用供體底材的方法和將壓電層移轉到載體底材的方法 TW202336927A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR2200380 2022-01-17
FR2200380A FR3131979B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support

Publications (1)

Publication Number Publication Date
TW202336927A true TW202336927A (zh) 2023-09-16

Family

ID=81328055

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111149570A TW202336927A (zh) 2022-01-17 2022-12-22 用於製作移轉壓電層用供體底材的方法和將壓電層移轉到載體底材的方法

Country Status (8)

Country Link
US (1) US20250176430A1 (https=)
EP (1) EP4466729A1 (https=)
JP (1) JP2025500549A (https=)
KR (1) KR20240135830A (https=)
CN (1) CN118525353A (https=)
FR (1) FR3131979B1 (https=)
TW (1) TW202336927A (https=)
WO (1) WO2023135181A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140474B1 (fr) * 2022-09-30 2024-11-01 Soitec Silicon On Insulator Substrat donneur et Procédé de fabrication d’un substrat donneur pour être utilisé dans un procédé de transfert de couche mince piézoélectrique.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

Also Published As

Publication number Publication date
FR3131979A1 (fr) 2023-07-21
EP4466729A1 (fr) 2024-11-27
KR20240135830A (ko) 2024-09-12
WO2023135181A1 (fr) 2023-07-20
JP2025500549A (ja) 2025-01-09
FR3131979B1 (fr) 2025-03-21
US20250176430A1 (en) 2025-05-29
CN118525353A (zh) 2024-08-20

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