FR3131979B1 - Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support - Google Patents

Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support Download PDF

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Publication number
FR3131979B1
FR3131979B1 FR2200380A FR2200380A FR3131979B1 FR 3131979 B1 FR3131979 B1 FR 3131979B1 FR 2200380 A FR2200380 A FR 2200380A FR 2200380 A FR2200380 A FR 2200380A FR 3131979 B1 FR3131979 B1 FR 3131979B1
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FR
France
Prior art keywords
substrate
transferring
piezoelectric layer
piezoelectric
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2200380A
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English (en)
French (fr)
Other versions
FR3131979A1 (fr
Inventor
Marcel Broekaart
Cedric Charles-Alfred
Luciana Capello
Morgane Logiou
Thierry Barge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2200380A priority Critical patent/FR3131979B1/fr
Priority to TW111149570A priority patent/TW202336927A/zh
Priority to CN202380016873.9A priority patent/CN118525353A/zh
Priority to US18/728,998 priority patent/US20250176430A1/en
Priority to EP23700213.4A priority patent/EP4466729A1/fr
Priority to PCT/EP2023/050571 priority patent/WO2023135181A1/fr
Priority to JP2024539002A priority patent/JP2025500549A/ja
Priority to KR1020247027493A priority patent/KR20240135830A/ko
Publication of FR3131979A1 publication Critical patent/FR3131979A1/fr
Application granted granted Critical
Publication of FR3131979B1 publication Critical patent/FR3131979B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • H10P90/1916Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/08Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
FR2200380A 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support Active FR3131979B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2200380A FR3131979B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
TW111149570A TW202336927A (zh) 2022-01-17 2022-12-22 用於製作移轉壓電層用供體底材的方法和將壓電層移轉到載體底材的方法
US18/728,998 US20250176430A1 (en) 2022-01-17 2023-01-11 Method for producing a donor substrate for transferring a piezoelectric layer, and method for transferring a piezoelectric layer to a carrier substrate
EP23700213.4A EP4466729A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support
CN202380016873.9A CN118525353A (zh) 2022-01-17 2023-01-11 制造用于转移压电层的供体基板的方法和将压电层转移至支承基板的方法
PCT/EP2023/050571 WO2023135181A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support
JP2024539002A JP2025500549A (ja) 2022-01-17 2023-01-11 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス
KR1020247027493A KR20240135830A (ko) 2022-01-17 2023-01-11 압전층 전사를 위한 도너 기판의 제조 공정 및 압전층을 지지 기판 상으로 전사하는 공정

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2200380 2022-01-17
FR2200380A FR3131979B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support

Publications (2)

Publication Number Publication Date
FR3131979A1 FR3131979A1 (fr) 2023-07-21
FR3131979B1 true FR3131979B1 (fr) 2025-03-21

Family

ID=81328055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2200380A Active FR3131979B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support

Country Status (8)

Country Link
US (1) US20250176430A1 (https=)
EP (1) EP4466729A1 (https=)
JP (1) JP2025500549A (https=)
KR (1) KR20240135830A (https=)
CN (1) CN118525353A (https=)
FR (1) FR3131979B1 (https=)
TW (1) TW202336927A (https=)
WO (1) WO2023135181A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140474B1 (fr) * 2022-09-30 2024-11-01 Soitec Silicon On Insulator Substrat donneur et Procédé de fabrication d’un substrat donneur pour être utilisé dans un procédé de transfert de couche mince piézoélectrique.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

Also Published As

Publication number Publication date
FR3131979A1 (fr) 2023-07-21
TW202336927A (zh) 2023-09-16
EP4466729A1 (fr) 2024-11-27
KR20240135830A (ko) 2024-09-12
WO2023135181A1 (fr) 2023-07-20
JP2025500549A (ja) 2025-01-09
US20250176430A1 (en) 2025-05-29
CN118525353A (zh) 2024-08-20

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