CN118525353A - 制造用于转移压电层的供体基板的方法和将压电层转移至支承基板的方法 - Google Patents

制造用于转移压电层的供体基板的方法和将压电层转移至支承基板的方法 Download PDF

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Publication number
CN118525353A
CN118525353A CN202380016873.9A CN202380016873A CN118525353A CN 118525353 A CN118525353 A CN 118525353A CN 202380016873 A CN202380016873 A CN 202380016873A CN 118525353 A CN118525353 A CN 118525353A
Authority
CN
China
Prior art keywords
substrate
piezoelectric
layer
donor
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380016873.9A
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English (en)
Chinese (zh)
Inventor
M·波卡特
C·查尔斯-艾尔弗雷德
L·卡佩罗
莫尔加纳·洛吉奥
T·巴尔格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of CN118525353A publication Critical patent/CN118525353A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
CN202380016873.9A 2022-01-17 2023-01-11 制造用于转移压电层的供体基板的方法和将压电层转移至支承基板的方法 Pending CN118525353A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FRFR2200380 2022-01-17
FR2200380A FR3131979B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
PCT/EP2023/050571 WO2023135181A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support

Publications (1)

Publication Number Publication Date
CN118525353A true CN118525353A (zh) 2024-08-20

Family

ID=81328055

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380016873.9A Pending CN118525353A (zh) 2022-01-17 2023-01-11 制造用于转移压电层的供体基板的方法和将压电层转移至支承基板的方法

Country Status (8)

Country Link
US (1) US20250176430A1 (https=)
EP (1) EP4466729A1 (https=)
JP (1) JP2025500549A (https=)
KR (1) KR20240135830A (https=)
CN (1) CN118525353A (https=)
FR (1) FR3131979B1 (https=)
TW (1) TW202336927A (https=)
WO (1) WO2023135181A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140474B1 (fr) * 2022-09-30 2024-11-01 Soitec Silicon On Insulator Substrat donneur et Procédé de fabrication d’un substrat donneur pour être utilisé dans un procédé de transfert de couche mince piézoélectrique.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

Also Published As

Publication number Publication date
FR3131979A1 (fr) 2023-07-21
TW202336927A (zh) 2023-09-16
EP4466729A1 (fr) 2024-11-27
KR20240135830A (ko) 2024-09-12
WO2023135181A1 (fr) 2023-07-20
JP2025500549A (ja) 2025-01-09
FR3131979B1 (fr) 2025-03-21
US20250176430A1 (en) 2025-05-29

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