TW202335290A - Method for producing semiconductor device, and semiconductor device - Google Patents

Method for producing semiconductor device, and semiconductor device Download PDF

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TW202335290A
TW202335290A TW111138560A TW111138560A TW202335290A TW 202335290 A TW202335290 A TW 202335290A TW 111138560 A TW111138560 A TW 111138560A TW 111138560 A TW111138560 A TW 111138560A TW 202335290 A TW202335290 A TW 202335290A
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semiconductor device
adhesive
resin
manufacturing
aforementioned
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TW111138560A
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Chinese (zh)
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田耕治
中西健一
佐佐木一博
湯本敬太
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日商昭和電工股份有限公司
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Publication of TW202335290A publication Critical patent/TW202335290A/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/14Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention provides a method for producing a semiconductor device, the method using an adhesive sheet that is capable of accurately following and adhering to recesses and projections in the surface during a processing step of a semiconductor device that has recesses and projections in the surface, such as a semiconductor chip with a bump and a PCB with a bump, while being free from the generation of an outgas during a high temperature treatment or an adhesive residue on the surface of an adherend from which the adhesive sheet is removed. A method for producing a semiconductor device according to the present invention comprises: a protection step in which an adhesive sheet that has a sheet-like base material and an adhesive layer that is formed on the base material is bonded to an adherend surface of a semiconductor device, the adherend surface having a bump; a UV irradiation step in which the adhesive sheet is irradiated with UV light, thereby curing the adhesive layer; and a separation step in which the adhesive sheet is separated and removed from the adherend surface having a bump. With respect to this method for producing a semiconductor device, the adhesive layer is a cured product of an adhesive composition; the adhesive composition contains a resin (A) that is represented by general formula (1-1) and a photopolymerization initiator (B); and the resin (A) has a weight average molecular weight of 50,000 to 550,000.

Description

半導體裝置之製造方法及半導體裝置Manufacturing method of semiconductor device and semiconductor device

本發明有關半導體裝置之製造方法及半導體裝置。The present invention relates to a manufacturing method of a semiconductor device and a semiconductor device.

半導體之製造步驟中,使用各種黏著薄片。具體而言,有於半導體晶圓之背面研磨(back grind)步驟中用以保護晶圓之保護薄片,以及於自半導體晶圓切割分斷(dicing)為元件小片之步驟中使用的固定用薄片等。該等黏著薄片係貼附於被接著體的半導體晶圓上,於特定加工步驟結束後自被接著體剝離之再剝離型的黏著薄片。Various adhesive wafers are used in the manufacturing steps of semiconductors. Specifically, there are protective sheets used to protect the wafer during the back grinding step of the semiconductor wafer, and fixing sheets used in the step of dicing the semiconductor wafer into device chips. wait. These adhesive sheets are re-peelable adhesive sheets that are attached to the semiconductor wafer of the adherend and are peeled off from the adherend after a specific processing step.

近幾年來,隨著電子設備之小型化及高密度化,作為將半導體元件以最小面積安裝之方法,覆晶安裝成為主流。於覆晶安裝中,為了謀求晶片間之接合,而使用具備具有由焊料所成的前端部之突起電極(凸塊)的半導體晶片(例如,矽穿孔(Through Silicon Via)(TSV)晶片)。該附凸塊之半導體晶片係藉由加熱至焊料的熔融溫度以上的溫度(通常為200℃以上)之回焊步驟而與其他半導體晶片或基板電性接合並安裝。又,於通信用電子設備安裝半導體晶片時,有因自晶片內部產生的電磁產生通信障礙之情況。為了防止這種情況,作為於半導體晶片外周部之電磁波遮罩遮罩,亦有經過使金屬膜蒸鍍(通常為150℃以上)之濺鍍步驟之情況。於回焊步驟或濺鍍步驟中,為了保護凸塊表面而使用再剝離型之黏著薄片。In recent years, with the miniaturization and high-density of electronic equipment, flip-chip mounting has become mainstream as a method of mounting semiconductor components in the smallest area. In flip-chip mounting, semiconductor wafers (for example, Through Silicon Via (TSV) wafers) equipped with protruding electrodes (bumps) having front-end portions made of solder are used to achieve bonding between wafers. The bumped semiconductor chip is electrically bonded and mounted with other semiconductor chips or substrates through a reflow step heated to a temperature above the melting temperature of the solder (usually above 200°C). Furthermore, when a semiconductor chip is mounted on a communication electronic device, communication problems may occur due to electromagnetic radiation generated inside the chip. In order to prevent this, the electromagnetic wave shielding mask on the outer peripheral part of the semiconductor wafer may be subjected to a sputtering step of evaporating a metal film (usually at 150° C. or higher). In the reflow step or sputtering step, a releasable adhesive sheet is used to protect the bump surface.

於半導體裝置中廣泛利用附凸塊之配線電路基板(PCB)。將附凸塊之PCB固定於另一基板或框體時,有時使用黏著膠帶。於半導體晶片之安裝過程中,該附凸塊之PCB有時會經過回焊步驟或濺鍍步驟。Bumped printed circuit boards (PCBs) are widely used in semiconductor devices. When fixing a PCB with bumps to another substrate or frame, adhesive tape is sometimes used. During the installation process of semiconductor chips, the PCB with bumps sometimes undergoes a reflow step or a sputtering step.

專利文獻1中揭示一種黏著膠帶,係具有紫外線硬化型黏著劑層之黏著膠帶,該紫外線硬化型黏著劑層可藉由於貼附於附凸塊之半導體晶片後照射紫外線而使黏著劑層硬化,於高溫處理步驟後剝離之使用法而運用者,於將前述黏著劑層之硬化前的凝膠分率設為A(%),於3000mJ/cm 2的光照射後之前述黏著劑層之拉伸彈性模數設為B(MPa)時,滿足以下關係式:-5≦B-exp(A/30)。 [先前技術文獻] [專利文獻] Patent Document 1 discloses an adhesive tape that has an ultraviolet curable adhesive layer. The ultraviolet curable adhesive layer can be hardened by being attached to a semiconductor chip with bumps and then irradiated with ultraviolet rays. To use the peeling method after the high-temperature treatment step, set the gel fraction of the adhesive layer before hardening to A (%), and pull the adhesive layer after irradiation with light of 3000 mJ/cm 2 When the elastic modulus is set to B (MPa), the following relationship is satisfied: -5≦B-exp(A/30). [Prior art documents] [Patent documents]

[專利文獻1]日本特開2020-94199號公報[Patent Document 1] Japanese Patent Application Publication No. 2020-94199

附凸塊之半導體晶片及附凸塊之PCB,由於其表面具有較大的凹凸形狀,故以再剝離型之黏著薄片保護時,黏著薄片於加工步驟中必須正確跟隨其凹凸形狀予以密著。又,黏著薄片被要求在回焊步驟等之高溫處理中不產生釋氣,或於黏著薄片剝離時於半導體晶片上無殘糊,且具高耐熱性。Semiconductor wafers with bumps and PCBs with bumps have large uneven shapes on their surfaces. Therefore, when they are protected by a releasable adhesive sheet, the adhesive sheet must correctly follow the uneven shapes during the processing steps to be closely adhered. In addition, the adhesive sheet is required to have no outgassing during high-temperature processing such as reflow steps, no residue on the semiconductor wafer when the adhesive sheet is peeled off, and high heat resistance.

然而,以往的黏著薄片並非能滿足上述所有條件者。專利文獻1中,由於黏著劑層不具有可追隨凹凸之程度的柔軟,故有對薄片貼附面之凹凸的密著性不足的情況。且有起因於添加劑而於加熱步驟後產生釋氣之情況,及於黏著薄片剝離時有殘糊之情況。However, conventional adhesive sheets cannot meet all the above conditions. In Patent Document 1, since the adhesive layer is not soft enough to follow the unevenness, the adhesion to the unevenness of the sheet attachment surface may be insufficient. In addition, there may be cases where gas is released after the heating step due to additives, and there may be residue when the adhesive sheet is peeled off.

本發明係鑒於上述情況而完成者,其課題在於提供半導體裝置之製造方法,其包含使用即使於附凸塊之半導體晶片、附凸塊之PCB等之於表面具有凹凸之半導體裝置之加工步驟中,仍可正確地追隨凹凸而密著之黏著薄片,且該製造方法於高溫處理中並無釋氣發生及於黏著薄片剝離時於被接著體表面無殘糊。The present invention was made in view of the above situation, and its object is to provide a method for manufacturing a semiconductor device, which includes a processing step using a semiconductor device having unevenness on the surface, such as a semiconductor wafer with bumps, a PCB with bumps, etc. , can still accurately follow the uneven and tightly adhered adhesive sheet, and this manufacturing method does not produce outgassing during high-temperature processing, and there is no residue on the surface of the adherend when the adhesive sheet is peeled off.

又,本發明之課題在於提供藉由上述製造方法製造之半導體裝置。 [用以解決課題之手段] Furthermore, an object of the present invention is to provide a semiconductor device manufactured by the above-mentioned manufacturing method. [Means used to solve problems]

本發明人等發現藉由設置將使用黏著劑組成物形成之黏著薄片貼附於附凸塊之配接著面之保護步驟,可解決上述課題,前述黏著劑組成物含有樹脂(A)及光聚合起始劑(B)作為必要成分,該樹脂(A)係藉由使以含羧基之乙烯性不飽和單體(a)作為必要單體成分聚合而得之含羧基之樹脂(b),與含脂環式環氧基之乙烯性不飽和化合物(c)之加成反應所獲得之重量平均分子量為5萬~55萬的樹脂。The inventors of the present invention have found that the above problems can be solved by providing a protective step of attaching an adhesive sheet formed using an adhesive composition containing resin (A) and photopolymerization to the mating surface with the bumps. The initiator (B) is an essential component, and the resin (A) is a carboxyl group-containing resin (b) obtained by polymerizing a carboxyl group-containing ethylenically unsaturated monomer (a) as an essential monomer component, and The resin obtained by the addition reaction of the ethylenically unsaturated compound (c) containing an alicyclic epoxy group has a weight average molecular weight of 50,000 to 550,000.

本發明包含以下態樣。 [1] 一種半導體裝置之製造方法,其包含下述步驟: 將具有薄片狀基材與形成於前述基材上之黏著劑層之黏著薄片貼附於半導體裝置之附凸塊之被接著面之保護步驟, 對前述黏著薄片進行UV照射,使前述黏著劑層硬化之UV照射步驟,及 將前述黏著薄片自前述附凸塊之被接著面剝離去除之剝離步驟, 前述黏著劑層係黏著劑組成物之硬化物, 前述黏著劑組成物包含以下述通式(1-1)表示之樹脂(A)與光聚合起始劑(B),前述樹脂(A)之重量平均分子量為5萬~55萬, (式(1-1)中,k、l、m及n表示設為k+l+m+n=100時之莫耳組成比,k係超過0~92以下,l係0~50,m係超過0~90以下,k、l及m之合計為65~95,n為5~35,R 1~R 4為-H或-CH 3,R 5為碳原子數1~16之烷基,R 6為碳原子數3~30之脂環式烴基或碳原子數6~20之芳香族烴基,R 7為-H或-(CH 2) j-COOH(式中之j為1或2),R 8為以上述通式(1-2)或(1-3)表示之基,式(1-2)及(1-3)中,p及q係選自0、1及2之任一者,於p為0時s係0,於p為1或2時s係1,R 9為-H或-CH 3)。 [2] 如[1]之半導體裝置之製造方法,其中前述式(1-1)中之n係7~33。 [3] 如[1]或[2]之半導體裝置之製造方法,其中前述式(1-1)中之k係45~90,l係4~40,m係1~20。 [4] 如[1]至[3]中任一項之半導體裝置之製造方法,其中前述黏著劑組成物進而含有交聯劑(C)。 [5] 如[1]至[4]中任一項之半導體裝置之製造方法,其中前述樹脂(A)之玻璃轉移溫度為-80~0℃。 [6] 如[1]至[5]中任一項之半導體裝置之製造方法,其中於前述保護步驟與前述剝離步驟之間,具有150℃以上之加熱步驟。 [7] 如[1]至[6]中任一項之半導體裝置之製造方法,其中於前述保護步驟與前述剝離步驟之間,具有加工步驟。 [8] 如[1]至[5]中任一項之半導體裝置之製造方法,其中於前述保護步驟與前述UV照射步驟之間,具有150℃以上之加熱步驟。 [9] 如[1]至[6]中任一項之半導體裝置之製造方法,其中於前述保護步驟與前述UV照射步驟之間,具有加工步驟。 [10] 如[1]至[5]中任一項之半導體裝置之製造方法,其中於前述UV照射步驟與前述剝離步驟之間,具有150℃以上之加熱步驟。 [11] 如[1]至[6]中任一項之半導體裝置之製造方法,其中於前述UV照射步驟與前述剝離步驟之間,具有加工步驟。 [12] 一種半導體裝置,係由如[1]至[11]中任一項之製造方法所製造。 [發明效果] The present invention includes the following aspects. [1] A method of manufacturing a semiconductor device, which includes the following steps: attaching an adhesive sheet having a sheet-like base material and an adhesive layer formed on the base material to the bonded surface of a bump attached to the semiconductor device The protection step includes UV irradiation of the adhesive sheet to harden the adhesive layer, and a peeling step of peeling and removing the adhesive sheet from the bonded surface of the bumps. The adhesive layer is composed of an adhesive. The cured product of the object, the aforementioned adhesive composition includes a resin (A) represented by the following general formula (1-1) and a photopolymerization initiator (B), and the weight average molecular weight of the aforementioned resin (A) is 50,000 to 55 ten thousand, (In formula (1-1), k, l, m and n represent the molar composition ratio when k+l+m+n=100, k is more than 0~92 or less, l is 0~50, m It is more than 0 to less than 90, the total of k, l and m is 65 to 95, n is 5 to 35, R 1 ~ R 4 is -H or -CH 3 , R 5 is an alkyl group with 1 to 16 carbon atoms. , R 6 is an alicyclic hydrocarbon group with 3 to 30 carbon atoms or an aromatic hydrocarbon group with 6 to 20 carbon atoms, R 7 is -H or -(CH 2 ) j -COOH (j in the formula is 1 or 2 ), R 8 is a group represented by the above general formula (1-2) or (1-3). In formulas (1-2) and (1-3), p and q are selected from 0, 1 and 2. In either case, when p is 0, s represents 0, when p is 1 or 2, s represents 1, and R 9 represents -H or -CH 3 ). [2] The manufacturing method of a semiconductor device as in [1], wherein n in the aforementioned formula (1-1) is 7 to 33. [3] The manufacturing method of a semiconductor device as in [1] or [2], wherein k in the aforementioned formula (1-1) is 45 to 90, l is 4 to 40, and m is 1 to 20. [4] The method for manufacturing a semiconductor device according to any one of [1] to [3], wherein the adhesive composition further contains a cross-linking agent (C). [5] The method for manufacturing a semiconductor device according to any one of [1] to [4], wherein the glass transition temperature of the resin (A) is -80~0°C. [6] The manufacturing method of a semiconductor device according to any one of [1] to [5], wherein there is a heating step of 150°C or above between the aforementioned protecting step and the aforementioned stripping step. [7] The manufacturing method of a semiconductor device according to any one of [1] to [6], wherein there is a processing step between the aforementioned protecting step and the aforementioned stripping step. [8] The manufacturing method of a semiconductor device according to any one of [1] to [5], wherein there is a heating step of 150°C or above between the aforementioned protection step and the aforementioned UV irradiation step. [9] The manufacturing method of a semiconductor device according to any one of [1] to [6], wherein there is a processing step between the aforementioned protection step and the aforementioned UV irradiation step. [10] The method for manufacturing a semiconductor device according to any one of [1] to [5], wherein there is a heating step of 150° C. or above between the UV irradiation step and the peeling step. [11] The method for manufacturing a semiconductor device according to any one of [1] to [6], wherein there is a processing step between the UV irradiation step and the peeling step. [12] A semiconductor device manufactured by the manufacturing method according to any one of [1] to [11]. [Effects of the invention]

含有樹脂(A)與光聚合起始劑(B)之黏著劑組成物,由於樹脂(A)具有源自脂環式化合物之構造,故具有良好的耐熱性。又,由於樹脂(A)的重量平均分子量為5萬~55萬,故對黏著劑層賦予柔軟性。因此,黏著劑組成物可形成對於表面具有凹凸之附凸塊之半導體晶片、附凸塊之PCB等之電子零件具有良好密著性之黏著劑層。且,藉由樹脂(A)的重量平均分子量為5萬~55萬,可減低於高溫處理中自黏著劑層產生的釋氣。進而,包含上述黏著劑組成物的硬化物之黏著劑層的黏著力藉由照射紫外線(UV)而使樹脂(A)中的不飽和鍵形成三維交聯構造經硬化而變化。具體而言,黏著劑組成物於UV照射之前,對被接著體顯示充分的黏著力,於UV照射後黏著力降低,可獲得優異的易剝離性,並且可充分防止於剝離後對被接著體之殘糊。An adhesive composition containing a resin (A) and a photopolymerization initiator (B) has good heat resistance because the resin (A) has a structure derived from an alicyclic compound. In addition, since the weight average molecular weight of the resin (A) is 50,000 to 550,000, it imparts flexibility to the adhesive layer. Therefore, the adhesive composition can form an adhesive layer with good adhesion to electronic components such as bumped semiconductor wafers and bumped PCBs with uneven surfaces. Furthermore, the weight average molecular weight of the resin (A) is 50,000 to 550,000, which can reduce the outgassing generated from the adhesive layer during high-temperature processing. Furthermore, the adhesive force of the adhesive layer containing the cured product of the adhesive composition is changed by irradiating ultraviolet (UV) to harden the unsaturated bonds in the resin (A) to form a three-dimensional cross-linked structure. Specifically, the adhesive composition shows sufficient adhesion to the adherend before UV irradiation, and the adhesion decreases after UV irradiation, enabling excellent easy peelability, and fully preventing adhesion to the adherend after peeling. The residue is blurry.

藉由使用本發明之半導體裝置之製造方法,可製造於附凸塊之半導體晶片、附凸塊之PCB等之於表面具有凹凸的半導體裝置的加工步驟中,亦可使黏著薄片正確地追隨凹凸而密著,於高溫處理中不會產生釋氣及於黏著薄片剝離時於附凸塊之被接著面上不產生殘糊之半導體裝置。By using the manufacturing method of a semiconductor device of the present invention, it is possible to manufacture semiconductor devices with bumps and convexes on the surface, such as bumped semiconductor wafers and bumped PCBs, etc., and the adhesive sheet can accurately follow the bumps and bumps. As for the tight adhesion, there will be no outgassing during high-temperature processing and no residue residue will be generated on the bonded surface with the bumps when the adhesive sheet is peeled off.

以下,針對本發明之半導體裝置的製造方法及半導體裝置加以說明。然而,本發明不限於以下實施形態。Hereinafter, a method for manufacturing a semiconductor device and a semiconductor device according to the present invention will be described. However, the present invention is not limited to the following embodiments.

[半導體裝置之製造方法] 一實施形態之半導體裝置之製造方法,其包含下述步驟: 將具有薄片狀基材與形成於前述基材上之黏著劑層之黏著薄片貼附於半導體裝置之附凸塊之被接著面之保護步驟, 對前述黏著薄片進行UV照射,使前述黏著劑層硬化之UV照射步驟,及 將前述黏著薄片自前述附凸塊之被接著面剝離去除之剝離步驟。 [Method for manufacturing semiconductor device] A method of manufacturing a semiconductor device according to an embodiment, which includes the following steps: A protective step of attaching an adhesive sheet having a sheet-like base material and an adhesive layer formed on the base material to the bonded surface of the bump attached to the semiconductor device, UV irradiation step of irradiating the aforementioned adhesive sheet to harden the aforementioned adhesive layer, and A peeling step of peeling and removing the adhesive sheet from the adhered surface with the bumps.

[保護步驟] 保護步驟係將黏著薄片貼附於設有凸塊電極的半導體裝置之附凸塊被接著面。藉此,保護半導體裝置之附凸塊之被接著面。作為前述半導體裝置,舉例為附凸塊之半導體晶片、附凸塊之印刷配線基板(PCB)、附凸塊之FPC基板等之於表面具有凹凸之半導體裝置。該等半導體裝置於將凸塊電極連接於其他電子裝置之安裝步驟之前的製造步驟中,附加各種加工步驟。藉由前述加工步驟中保護附凹凸之被接著面,可防止附凸塊之被接著面的損壞、損壞、污染等。保護步驟亦兼作為用以進行後續加工步驟之半導體裝置的暫時固定機能。 [Protection steps] The protection step involves attaching the adhesive sheet to the bump-attached surface of the semiconductor device provided with bump electrodes. Thereby, the bump-attached surface of the semiconductor device is protected. Examples of the semiconductor device include a bumped semiconductor wafer, a bumped printed wiring board (PCB), a bumped FPC substrate, and other semiconductor devices having uneven surfaces. These semiconductor devices include various processing steps in the manufacturing step before the mounting step of connecting the bump electrodes to other electronic devices. By protecting the bonded surface with bumps in the aforementioned processing steps, damage, damage, contamination, etc. of the bonded surface with bumps can be prevented. The protection step also serves as a temporary fixation function for the semiconductor device for subsequent processing steps.

半導體裝置具有複數個附凸塊之被接著面時,於保護步驟中,將黏著薄片貼附於一部分或全部的附凸塊之被接著面。例如,進行日本特開2014-225546號公報等中揭示之半導體晶片之積層時,可於附凸塊之被接著面的安裝面以外的非安裝面貼附黏著薄片。When the semiconductor device has a plurality of bonded surfaces with bumps, in the protection step, an adhesive sheet is attached to part or all of the bonded surfaces with bumps. For example, when laminating semiconductor wafers disclosed in Japanese Patent Application Laid-Open No. 2014-225546, etc., an adhesive sheet can be attached to the non-mounting surface other than the mounting surface of the bonded surface with the bumps.

[黏著薄片] 一實施形態之黏著薄片包含薄片狀基材及形成於基材上之黏著劑層。 [Adhesive sheet] An adhesive sheet according to one embodiment includes a sheet-like base material and an adhesive layer formed on the base material.

較佳於黏著劑層之與基材相反側的表面設置剝離薄片(隔離片)。於黏著劑層上設置剝離薄片時,直至使用前可使用剝離薄片保護黏著劑層。於黏著劑層上設置剝離薄片時,將剝離薄片剝除使黏著劑層露出,可效率良好地進行將黏著劑層(貼附面)壓接至被接著體之作業。It is preferable to provide a release sheet (separator) on the surface of the adhesive layer opposite to the base material. When a release sheet is provided on the adhesive layer, the release sheet can be used to protect the adhesive layer until use. When a peeling sheet is provided on the adhesive layer, the peeling sheet is peeled off to expose the adhesive layer, and the pressure-bonding operation of the adhesive layer (adhering surface) to the adherend can be performed efficiently.

黏著薄片可作為藉由沖壓法等作成與被接著體形狀對應的形狀之黏著膠帶而使用。黏著薄片亦可藉由捲取及切斷作成捲筒形狀之膠帶而使用。The adhesive sheet can be used as an adhesive tape formed into a shape corresponding to the shape of the adherend by a stamping method or the like. The adhesive sheet can also be used by rolling and cutting the tape into a roll shape.

作為基材,可適當選擇習知薄片狀的材料而使用。作為基材,較佳使用由透明樹脂材料所成之樹脂薄片。As the base material, a conventional sheet-shaped material can be appropriately selected and used. As the base material, a resin sheet made of a transparent resin material is preferably used.

作為樹脂材料,可舉例為例如聚乙烯(PE)、聚丙烯(PP)等之聚烯烴;聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚萘二甲酸乙二酯(PEN)等之聚酯;聚氯乙烯(PVC);聚醯胺(PA);聚醯亞胺(PI);聚苯硫醚(PPS);乙烯乙酸乙烯酯(EVA);及聚四氟乙烯(PTFE)。該等樹脂材料中,為了獲得具有適度可撓性之薄片,較佳使用PE、PP或PET。樹脂材料可單獨使用,亦可混合2種以上使用。Examples of the resin material include polyolefins such as polyethylene (PE) and polypropylene (PP); polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polynaphthalene. Polyesters such as ethylene dicarboxylate (PEN); polyvinyl chloride (PVC); polyamide (PA); polyimide (PI); polyphenylene sulfide (PPS); ethylene vinyl acetate (EVA) ; and polytetrafluoroethylene (PTFE). Among these resin materials, in order to obtain a sheet with moderate flexibility, PE, PP or PET is preferably used. The resin material can be used alone, or two or more types can be mixed and used.

使用樹脂薄片作為基材時,樹脂薄片可為單層,亦可為兩層以上之多層構造(例如三層構造)。於具有多層構造的樹脂薄片中,構成各層的樹脂材料可為1種,亦可包含2種以上。When a resin sheet is used as the base material, the resin sheet can be a single layer or a multi-layer structure of two or more layers (for example, a three-layer structure). In a resin sheet having a multi-layer structure, the number of resin materials constituting each layer may be one type, or two or more types.

基材厚度可根據黏著薄片之用途、基材的材料等適當選擇。黏著薄片係於進行回焊步驟或濺鍍處理時保護附凸塊之半導體晶片或附凸塊之軟性配線電路基板(FPC)者,使用樹脂薄片作為基材時,基材厚度較佳為5~1000μm,更佳為10~300μm。基材厚度為5μm以上時,黏著薄片之剛性較高(硬挺度較強)。因此,黏著薄片貼附於半導體晶片等之被接著體上,或自被接著物剝離時,有難以於黏著薄片發生起皺或隆起之傾向。且,基材厚度為5μm以上時,貼附於被接著體上的黏著薄片很容易自被接著體上剝離,獲得良好作業性(處理性、操控性)。基材厚度為1000μm以下時,可防止黏著薄片的剛性過高(硬挺性強)而使作業性降低。The thickness of the base material can be appropriately selected according to the purpose of the adhesive sheet, the material of the base material, etc. The adhesive sheet is used to protect the semiconductor chip with bumps or the flexible printed circuit board (FPC) with bumps during the reflow step or sputtering process. When using a resin sheet as the base material, the thickness of the base material is preferably 5~ 1000μm, preferably 10~300μm. When the base material thickness is 5 μm or more, the adhesive sheet has higher rigidity (stronger stiffness). Therefore, when the adhesive sheet is attached to an adherend such as a semiconductor chip or peeled off from the adherend, there is a tendency for the adhesive sheet to become wrinkled or bulged. Moreover, when the base material thickness is 5 μm or more, the adhesive sheet attached to the adherend can be easily peeled off from the adherend, resulting in good workability (handling properties, controllability). When the thickness of the base material is 1000 μm or less, it can prevent the adhesive sheet from being too rigid (strong stiffness) and lowering the workability.

使用樹脂薄片作為基材時,可適當採用過去已知的一般薄片成形方法(例如擠出成形、T模嘴成形、吹脹成形、單軸或雙軸延伸成形等)製造基材。When a resin sheet is used as the base material, the base material can be produced by appropriately using conventionally known general sheet forming methods (such as extrusion molding, T-die molding, inflation molding, uniaxial or biaxial stretching, etc.).

於基材之與黏著劑層接觸之側的表面,亦可實施表面處理以提高基材與黏著劑層之接著性。Surface treatment can also be performed on the surface of the side of the substrate that is in contact with the adhesive layer to improve the adhesion between the substrate and the adhesive layer.

作為表面處理,可舉例為例如電暈放電處理、酸處理、紫外線照射處理、電漿處理及塗附底塗劑(底塗)。Examples of surface treatment include corona discharge treatment, acid treatment, ultraviolet irradiation treatment, plasma treatment, and application of a primer (primer).

一實施形態之黏著薄片的黏著劑層包含後述之黏著劑組成物的硬化物。The adhesive layer of the adhesive sheet according to one embodiment includes a hardened product of the adhesive composition described below.

黏著劑層的厚度較佳為1~1000μm,更佳為5~750μm,又更佳為10~500μm。黏著劑層的厚度為1μm以上時,黏著劑層厚度的均一性良好。黏著劑層的厚度為1000μm以下時,黏著劑層可以無隆起之狀態對表面之凹凸充分密著。The thickness of the adhesive layer is preferably 1~1000 μm, more preferably 5~750 μm, and more preferably 10~500 μm. When the thickness of the adhesive layer is 1 μm or more, the thickness uniformity of the adhesive layer is good. When the thickness of the adhesive layer is 1000 μm or less, the adhesive layer can fully adhere to the unevenness of the surface without any ridges.

於黏著劑層之與基材相反側的表面設置剝離薄片時,作為剝離薄片,可適當選擇使用習知薄片狀材料。作為剝離薄片,可使用與上述作為基材使用之上述樹脂薄片相同者。When a release sheet is provided on the surface of the adhesive layer on the opposite side to the base material, a conventional sheet-shaped material may be appropriately selected and used as the release sheet. As the release sheet, the same resin sheet as the above-mentioned resin sheet used as the base material can be used.

剝離薄片的厚度可根據黏著薄片之用途、剝離薄片之材料等適當選擇。使用樹脂薄片作為剝離薄片時,剝離薄片之厚度較佳為5~300μm,更佳為10~200μm,又更佳為25~100μm。The thickness of the release sheet can be appropriately selected depending on the use of the adhesive sheet, the material of the release sheet, etc. When a resin sheet is used as the release sheet, the thickness of the release sheet is preferably 5 to 300 μm, more preferably 10 to 200 μm, and still more preferably 25 to 100 μm.

剝離薄片之剝離面(與黏著劑層相接配置之面),根據需要,亦可使用矽氧系、長鏈烷基系、氟系等之以往習知之剝離劑實施剝離處理。The peeling surface of the peeling sheet (the surface arranged in contact with the adhesive layer) can be peeled off using conventionally known release agents such as silicone type, long chain alkyl type, fluorine type, etc., if necessary.

[黏著薄片之製造方法] 一實施形態之黏著薄片例如可藉由以下所示之方法製造。 [Production method of adhesive sheet] The adhesive sheet of one embodiment can be produced by the method shown below, for example.

首先,調製將後述之黏著劑組成物溶解或分散於溶劑之黏著劑溶液。上述黏著劑組成物可直接作為黏著劑溶液使用。First, an adhesive solution is prepared in which the adhesive composition described below is dissolved or dispersed in a solvent. The above adhesive composition can be used directly as an adhesive solution.

其次,將黏著劑溶液塗佈於基材上,於包含溶劑時進行加熱乾燥去除溶劑,形成黏著劑層。隨後,於黏著劑層上,根據需要貼附剝離薄片。進而,根據需要,所得薄片以烘箱養生一定時間,形成交聯構造,藉此可獲得黏著薄片。Secondly, the adhesive solution is coated on the substrate, and when it contains a solvent, it is heated and dried to remove the solvent to form an adhesive layer. Subsequently, a release sheet is attached to the adhesive layer as necessary. Furthermore, if necessary, the obtained sheet is cured in an oven for a certain period of time to form a cross-linked structure, whereby an adhesive sheet can be obtained.

作為製造黏著薄片之另一方法,舉例為於剝離薄片上塗佈上述黏著劑溶液,於包含溶劑時進行加熱乾燥去除溶劑,形成黏著劑層。然後,將具有黏著劑層之剝離薄片,以黏著劑層側之面朝向基材設置於基材上,將黏著劑層轉印(移黏)至基材上,根據需要,以烘箱養生一定時間,形成交聯構造之方法。As another method of manufacturing an adhesive sheet, for example, the above-mentioned adhesive solution is coated on a peelable sheet, and when a solvent is contained, the solution is heated and dried to remove the solvent to form an adhesive layer. Then, place the peeling sheet with the adhesive layer on the base material with the side of the adhesive layer facing the base material, transfer the adhesive layer to the base material, and cure it in an oven for a certain period of time as needed. , a method of forming a cross-linked structure.

作為將上述黏著劑溶液塗佈於基材上(或剝離薄片上)之方法,可使用習知方法。具體而言,使用慣用之塗佈器,例如凹版輥塗佈器、反向輥塗佈器、接觸輥塗佈器、浸漬輥塗佈器、棒塗佈器、刀塗佈器、噴霧塗佈器、缺角輪塗佈器、直接塗佈器等塗佈之方法。As a method of applying the adhesive solution to the base material (or the release sheet), a conventional method can be used. Specifically, a conventional coater is used, such as a gravure roll coater, a reverse roll coater, a contact roll coater, a dip roll coater, a rod coater, a knife coater, and a spray coater. Coating methods such as notch wheel applicator and direct applicator.

將上述塗佈之黏著劑溶液加熱乾燥時的條件未特別限制,但通常於25~180℃,較佳為60~150℃,通常進行1~20分鐘,較佳為1~10分鐘的加熱乾燥。藉由以上述條件進行加熱乾燥,可去除黏著劑溶液中所含的溶劑。加熱乾燥後之黏著薄片以烘箱養生一定時間的條件未特別限制,但通常於25~100℃,較佳為30~80℃下通常進行1~7天,較佳為1-3天的養生。藉由以上述條件進行養生,使樹脂(A)與交聯劑(C)交聯,可將黏著劑層的凝膠分率調整於所需範圍。The conditions for heating and drying the above-mentioned coated adhesive solution are not particularly limited, but the heating and drying is usually performed at 25 to 180°C, preferably 60 to 150°C, for 1 to 20 minutes, preferably 1 to 10 minutes. . By heating and drying under the above conditions, the solvent contained in the adhesive solution can be removed. The conditions for curing the heated and dried adhesive sheets in an oven for a certain period of time are not particularly limited, but they are usually cured at 25 to 100°C, preferably 30 to 80°C, for 1 to 7 days, preferably 1 to 3 days. By performing curing under the above conditions and cross-linking the resin (A) and the cross-linking agent (C), the gel fraction of the adhesive layer can be adjusted to a desired range.

(黏著劑組成物) 一實施形態之黏著劑組成物包含樹脂(A)與光聚合起始劑(B)。 (Adhesive composition) An adhesive composition according to one embodiment includes a resin (A) and a photopolymerization initiator (B).

<樹脂(A)> 一實施形態之黏著劑組成物中所含之樹脂(A)係以下述通式(1-1)表示之化合物。 <Resin(A)> The resin (A) contained in the adhesive composition of one embodiment is a compound represented by the following general formula (1-1).

(式(1-1)中,k、l、m及n表示設為k+l+m+n=100時之莫耳組成比,k係超過0~92以下,l係0~50,m係超過0~90以下,k、l及m之合計為65~95,n為5~35,R 1~R 4為-H或-CH 3,R 5為碳原子數1~16之烷基,R 6為碳原子數3~30之脂環式烴基或碳原子數6~20之芳香族烴基,R 7為-H或-(CH 2) j-COOH(式中之j為1或2),R 8為以上述通式(1-2)或(1-3)表示之基,式(1-2)及(1-3)中,p及q係選自0、1及2之任一者,於p為0時s係0,於p為1或2時s係1,R 9為-H或-CH 3)。 (In formula (1-1), k, l, m and n represent the molar composition ratio when k+l+m+n=100, k is more than 0~92 or less, l is 0~50, m It is more than 0 to less than 90, the total of k, l and m is 65 to 95, n is 5 to 35, R 1 ~ R 4 is -H or -CH 3 , R 5 is an alkyl group with 1 to 16 carbon atoms. , R 6 is an alicyclic hydrocarbon group with 3 to 30 carbon atoms or an aromatic hydrocarbon group with 6 to 20 carbon atoms, R 7 is -H or -(CH 2 ) j -COOH (j in the formula is 1 or 2 ), R 8 is a group represented by the above general formula (1-2) or (1-3). In formulas (1-2) and (1-3), p and q are selected from 0, 1 and 2. In either case, when p is 0, s represents 0, when p is 1 or 2, s represents 1, and R 9 represents -H or -CH 3 ).

式(1-1)中,k、l、m及n表示設為k+l+m+n=100時之莫耳組成比。k係超過0~92以下。l係0~50。m係超過0~90以下。k、l及m之合計為65~95。k、l及m之合計為65以上時,可形成於紫外線照射前對被接著體具有充分黏著性的黏著劑層。k、l及m之合計較佳為70~94,更佳為75~90。In the formula (1-1), k, l, m and n represent the molar composition ratio when k+l+m+n=100. k series exceeds 0~92 or less. l ranges from 0 to 50. m series exceeds 0~90 or less. The total of k, l and m is 65~95. When the total of k, l and m is 65 or more, an adhesive layer with sufficient adhesion to the adherend before ultraviolet irradiation can be formed. The total of k, l and m is preferably 70 to 94, more preferably 75 to 90.

式(1-1)中,以k括起來之括弧內所示之重複單元(以下亦稱「重複單元k」)為必要重複單元。重複單元k有助於UV照射前之黏著劑組成物的黏著力。重複單元k的重複數k為超過0~92以下,較佳為45~ 90,更佳為60~88。In formula (1-1), the repeating unit shown in the parentheses enclosed by k (hereinafter also referred to as "repeating unit k") is an essential repeating unit. The repeating unit k contributes to the adhesion of the adhesive composition before UV irradiation. The repeat number k of the repeating unit k is from more than 0 to 92 or less, preferably from 45 to 90, more preferably from 60 to 88.

式(1-1)中,以l括起來之括弧內所示之重複單元(以下亦稱「重複單元l」)亦可沒有。換言之,重複單元l的重複數l可為0。重複單元l有助於黏著劑組成物之耐熱性。重複單元l的重複數l為0~50,較佳為4~40,更佳為5~30。In formula (1-1), the repeating unit shown in parentheses enclosed by l (hereinafter also referred to as "repeating unit l") may not be present. In other words, the repeat number l of the repeating unit l may be 0. The repeating unit l contributes to the heat resistance of the adhesive composition. The repeat number l of the repeating unit l is 0 to 50, preferably 4 to 40, more preferably 5 to 30.

式(1-1)中,以m括起來之括弧內所示之重複單元(以下亦稱「重複單元m」)為必要重複單元。重複單元m有助於UV照射前之黏著劑組成物的黏著力及耐熱性。且黏著劑組成物包含具有與羧基反應之官能基的交聯劑時,重複單元m藉由與交聯劑反應而對黏著劑層賦予凝集力。重複單元m之重複數m為超過0~90以下,較佳為1~20,更佳為1~10。In formula (1-1), the repeating unit shown in parentheses enclosed by m (hereinafter also referred to as "repeating unit m") is an essential repeating unit. The repeating unit m contributes to the adhesion and heat resistance of the adhesive composition before UV irradiation. When the adhesive composition contains a cross-linking agent having a functional group that reacts with a carboxyl group, the repeating unit m imparts cohesive force to the adhesive layer by reacting with the cross-linking agent. The repeat number m of the repeating unit m is from more than 0 to less than 90, preferably from 1 to 20, more preferably from 1 to 10.

式(1-1)中,以n括起來之括弧內所示之重複單元(以下亦稱「重複單元n」)為必要重複單元。重複單元n有助於黏著劑組成物之耐熱性。重複單元n之重複數n為5~35,較佳為7~33,更佳為10~30。重複單元n為35以下時,樹脂(A)中的不飽和鍵藉由UV照射形成三維交聯構造而硬化,可形成黏著力降低至適當範圍之黏著劑層。n為5以上時,可獲得起因於源自脂環式化合物的構造之耐熱性提高效果。In formula (1-1), the repeating unit shown in parentheses enclosed by n (hereinafter also referred to as "repeating unit n") is an essential repeating unit. The repeating unit n contributes to the heat resistance of the adhesive composition. The repeat number n of the repeating unit n is 5 to 35, preferably 7 to 33, and more preferably 10 to 30. When the repeating unit n is 35 or less, the unsaturated bonds in the resin (A) are hardened by UV irradiation to form a three-dimensional cross-linked structure, thereby forming an adhesive layer with an adhesive force reduced to an appropriate range. When n is 5 or more, the heat resistance improvement effect due to the structure derived from the alicyclic compound can be obtained.

藉由該等重複單元所貢獻之機能的相乘效果,包含樹脂(A)之黏著劑組成物,於紫外線(UV)照射前的黏著力與UV照射後的黏著力之平衡更為良好。其結果,於UV照射前,可獲得充分之黏著力,可獲得於UV照射後獲得黏著力降低之更優異易剝離性的黏著劑組成物。而且,該黏著劑組成物即使於UV照射前自處於高溫狀態回到室溫黏著力亦不會過高,於UV照射後獲得優異的易剝離性,並且剝離後於難以於被接著物產生殘糊。Through the multiplication effect of the functions contributed by these repeating units, the adhesive composition including the resin (A) has a better balance between the adhesive force before ultraviolet (UV) irradiation and the adhesive force after UV irradiation. As a result, sufficient adhesion can be obtained before UV irradiation, and an adhesive composition can be obtained that has excellent peelability with reduced adhesion after UV irradiation. Moreover, even if the adhesive composition returns to room temperature from a high temperature state before UV irradiation, the adhesive force will not be too high, and it can obtain excellent peelability after UV irradiation, and it is difficult to produce residue on the adherend after peeling off. paste.

重複單元k中,R 1為-H或-CH 3,較佳為-H。R 5為碳原子數1~16之烷基,較佳為碳原子數1~8之烷基,特佳為碳原子數2、4或8之烷基。 In the repeating unit k, R 1 is -H or -CH 3 , preferably -H. R 5 is an alkyl group having 1 to 16 carbon atoms, preferably an alkyl group having 1 to 8 carbon atoms, particularly preferably an alkyl group having 2, 4 or 8 carbon atoms.

重複單元k可為R 1及/或R 5不同之複數種重複單元。重複單元k包含複數個重複單元時,重複單元k的重複數k表示複數個重複單元的重複數合計。例如,重複單元k包括R 1及/或R 5不同之重複單元A及B,包含2個重複單元A及包含3個重複單元B時,重複數k係將A的數與B的數合計成為「5」。 The repeating unit k may be a plurality of repeating units with different R 1 and/or R 5 . When the repeating unit k includes a plurality of repeating units, the repeating number k of the repeating unit k represents the total repeating number of the plurality of repeating units. For example, when the repeating unit k includes repeating units A and B with different R 1 and/or R 5 , including 2 repeating units A and 3 repeating units B, the repeating number k is the sum of the number of A and the number of B. 「5」.

重複單元l中,R 2為-H或-CH 3,較佳為-H。R 6為碳原子數3~30之脂環式烴基或碳原子數6~20之芳香族烴基,較佳為碳原子數6~20之脂環式烴基或碳原子數6~12之芳香族烴基。 In the repeating unit 1, R 2 is -H or -CH 3 , preferably -H. R 6 is an alicyclic hydrocarbon group with 3 to 30 carbon atoms or an aromatic hydrocarbon group with 6 to 20 carbon atoms, preferably an alicyclic hydrocarbon group with 6 to 20 carbon atoms or an aromatic group with 6 to 12 carbon atoms. hydrocarbyl.

重複單元l可為R 2及/或R 6不同之複數種重複單元。重複單元l包含複數種重複單元時,重複單元l的重複數l表示複數種重複單元的重複數之合計。 The repeating unit 1 can be a plurality of repeating units with different R 2 and/or R 6 . When the repeating unit 1 includes a plurality of repeating units, the repeating number l of the repeating unit 1 represents the total repeating number of the plurality of repeating units.

重複單元m中,R 3為-H或-CH 3,較佳為-H。R 7為-H或-(CH 2) j-COOH(式中之j為1或2),較佳為-H。 In the repeating unit m, R 3 is -H or -CH 3 , preferably -H. R 7 is -H or -(CH 2 ) j -COOH (j in the formula is 1 or 2), preferably -H.

重複單元m可為R 3及/或R 7不同之複數種重複單元。重複單元m包含複數種重複單元時,重複單元m之重複數m表示複數種重複單元的重複數之合計。 The repeating unit m may be a plurality of repeating units with different R 3 and/or R 7 . When the repeating unit m includes a plurality of repeating units, the repeat number m of the repeating unit m represents the total repeat number of the plurality of repeating units.

重複單元n中,R 4為-H或-CH 3,較佳為-H。R 8係以式(1-2)或(1-3)表示之基。以式(1-2)或(1-3)表示之基均包含源自脂環式化合物之構造,具有提高黏著劑組成物之耐熱性的機能。式(1-2)或(1-3)中,p及q係選自0、1及2之任一者。p為0時s係0,p為1或2時s為1。R 9為-H或-CH 3In the repeating unit n, R 4 is -H or -CH 3 , preferably -H. R 8 is a group represented by formula (1-2) or (1-3). The group represented by formula (1-2) or (1-3) contains a structure derived from an alicyclic compound and has the function of improving the heat resistance of the adhesive composition. In formula (1-2) or (1-3), p and q are selected from any one of 0, 1 and 2. When p is 0, s is 0, and when p is 1 or 2, s is 1. R 9 is -H or -CH 3 .

重複單元n可為R 4及/或R 8不同之複數種重複單元。重複單元n包含複數種重複單元時,重複單元n之重複數n表示複數種重複單元的重複數之合計。 The repeating unit n may be a plurality of repeating units with different R 4 and/or R 8 . When the repeating unit n includes a plurality of repeating units, the repeat number n of the repeating unit n represents the total number of repeats of the plurality of repeating units.

以式(1-1)表示之樹脂(A)可為由重複單元k、重複單元l、重複單元m及重複單元n所成之無規共聚物、嵌段共聚物、交替共聚物之任一者。以式(1-1)表示之樹脂(A)可不包含重複單元l,而由重複單元k、重複單元m及重複單元n所成之無規共聚物、嵌段共聚物、交替共聚物之任一者。The resin (A) represented by formula (1-1) may be any of a random copolymer, a block copolymer, and an alternating copolymer composed of repeating units k, repeating units l, repeating units m, and repeating units n. By. The resin (A) represented by the formula (1-1) may not include the repeating unit l, but may be any random copolymer, block copolymer, or alternating copolymer composed of the repeating unit k, the repeating unit m, and the repeating unit n. One.

樹脂(A)的重量平均分子量為5萬~55萬,較佳為10萬~50萬,更佳為26萬~45萬。樹脂(A)的重量平均分子量為5萬以上時,於具有包含黏著劑組成物的硬化物之黏著劑層的黏著薄片貼附於被接著體後剝離時,黏著劑層更難以殘留於被接著體上。樹脂(A)的重量平均分子量為55萬以下時,黏著劑層對於凸塊等之表面凹凸以無間隙地充分密著。樹脂(A)的重量平均分子量係以實施例中記載的方法測定之值。The weight average molecular weight of the resin (A) is 50,000 to 550,000, preferably 100,000 to 500,000, more preferably 260,000 to 450,000. When the weight average molecular weight of the resin (A) is 50,000 or more, it is more difficult for the adhesive layer to remain on the adherend when the adhesive sheet having an adhesive layer containing a hardened substance of the adhesive composition is attached to the adherend and then peeled off. physically. When the weight average molecular weight of the resin (A) is 550,000 or less, the adhesive layer is fully adhered to the surface irregularities of bumps and the like without gaps. The weight average molecular weight of the resin (A) is a value measured by the method described in the Examples.

樹脂(A)的玻璃轉移溫度(Tg)較佳為-80~0℃,更佳為-60~-10℃,又更佳為-50~-10℃。樹脂(A)的玻璃轉移溫度在-80℃~0℃之範圍內時,UV照射前之黏著劑組成物的黏著力良好。樹脂(A)的Tg係以實施例中記載的方法測定之值。The glass transition temperature (Tg) of the resin (A) is preferably -80~0°C, more preferably -60~-10°C, still more preferably -50~-10°C. When the glass transition temperature of resin (A) is in the range of -80°C to 0°C, the adhesive composition before UV irradiation has good adhesion. The Tg of the resin (A) is a value measured by the method described in the Examples.

樹脂(A)的酸價較佳為超過0~25mgKOH/g,更佳為3~20mg KOH/g。樹脂(A)的酸價為超過0~25mgKOH/g範圍內時,可減低加熱後之被接著體污染(殘糊)。黏著劑組成物包含交聯劑時,樹脂(A)的酸價在上述範圍內時,樹脂(A)與交聯劑反應而可有效提高黏著劑組成物的凝集力,藉此可降低加熱後的被接著體污染(殘糊)。樹脂(A)的酸價係以實施例中記載之方法測定之值。The acid value of the resin (A) is preferably over 0 to 25 mg KOH/g, more preferably 3 to 20 mg KOH/g. When the acid value of the resin (A) exceeds the range of 0~25mgKOH/g, it can reduce the contamination (residual paste) of the adherend after heating. When the adhesive composition contains a cross-linking agent and the acid value of the resin (A) is within the above range, the resin (A) reacts with the cross-linking agent to effectively increase the cohesive force of the adhesive composition, thereby reducing the The adherend is contaminated (residual paste). The acid value of the resin (A) is a value measured by the method described in the Examples.

(樹脂(A)之製造方法) 樹脂(A)例如可藉由以下所示方法製造。 (Manufacturing method of resin (A)) Resin (A) can be produced by the method shown below, for example.

首先,使包含含羧基之乙烯性不飽和單體(a)與乙烯性不飽和單體(d)的原料單體聚合,製造含羧基之樹脂(b)。乙烯性不飽和單體(d)亦可包含於聚合後形成重複單元k的單體,包含形成重複單元l骨架之單體。First, raw material monomers including a carboxyl group-containing ethylenically unsaturated monomer (a) and an ethylenically unsaturated monomer (d) are polymerized to produce a carboxyl group-containing resin (b). The ethylenically unsaturated monomer (d) may also include monomers that form the repeating unit k after polymerization, including monomers that form the skeleton of the repeating unit l.

其次,藉由使含羧基之樹脂(b)與特定之含脂環式環氧基之乙烯性基不飽和化合物(c)之加成反應,可製造樹脂(A)。Next, the resin (A) can be produced by the addition reaction of the carboxyl group-containing resin (b) and the specific alicyclic epoxy group-containing ethylenically unsaturated compound (c).

(含羧基之乙烯性不飽和單體(a)) 製造含羧基之樹脂(b)時所使用之含羧基之乙烯性不飽和單體(a)係藉由聚合形成重複單元m骨架之單體。含羧基之乙烯性不飽和單體(a)具有1個羧基。 (Carboxyl group-containing ethylenically unsaturated monomer (a)) The carboxyl group-containing ethylenically unsaturated monomer (a) used in producing the carboxyl group-containing resin (b) is a monomer that forms the skeleton of the repeating unit m by polymerization. The carboxyl group-containing ethylenically unsaturated monomer (a) has one carboxyl group.

作為含羧基之乙烯性不飽和單體(a),可舉例為例如(甲基)丙烯酸、(甲基)丙烯酸羧基甲酯及(甲基)丙烯酸β-羧基乙酯。Examples of the carboxyl group-containing ethylenically unsaturated monomer (a) include (meth)acrylic acid, carboxymethyl (meth)acrylate, and β-carboxyethyl (meth)acrylate.

該等中,作為含羧基之乙烯性不飽和單體(a),就反應性之觀點,較佳使用(甲基)丙烯酸及/或(甲基)丙烯酸β-羧基乙酯。Among these, (meth)acrylic acid and/or (meth)acrylic acid β-carboxyethyl ester is preferably used as the carboxyl group-containing ethylenically unsaturated monomer (a) from the viewpoint of reactivity.

本揭示中,所謂(甲基)丙烯酸係指「丙烯酸」或「甲基丙烯酸」。所謂(甲基)丙烯酸酯係指「丙烯酸酯」或「甲基丙烯酸酯」。所謂(甲基)丙烯醯基係指「丙烯醯基」或「甲基丙烯醯基」。In this disclosure, (meth)acrylic acid refers to “acrylic acid” or “methacrylic acid”. (Meth)acrylate refers to "acrylate" or "methacrylate". The so-called (meth)acrylyl group refers to "acrylyl group" or "methacrylyl group".

(含羧基之樹脂(b)) 含羧基之樹脂(b)係使至少包含含羧基之乙烯性不飽和單體(a)與可與含羧基之乙烯性不飽和單體(a)可共聚之乙烯性不飽和單體(d)之原料單體共聚合者。 (Carboxyl-containing resin (b)) The carboxyl group-containing resin (b) contains at least a carboxyl group-containing ethylenically unsaturated monomer (a) and an ethylenically unsaturated monomer (d) copolymerizable with the carboxyl group-containing ethylenically unsaturated monomer (a). The raw material monomers are copolymerized.

含羧基之樹脂(b)係成為以式(1-1)表示之樹脂(A)的骨架的成分。重複單元k、重複單元l及重複單元m均係源自含羧基之樹脂(b)的重複單元。The carboxyl group-containing resin (b) is a component that forms the skeleton of the resin (A) represented by the formula (1-1). The repeating unit k, the repeating unit 1 and the repeating unit m are all repeating units derived from the carboxyl group-containing resin (b).

作為乙烯性不飽和單體(d),使用1種以上之藉由聚合形成重複單元k的骨架之單體。作為乙烯性不飽和單體(d),亦可與藉由聚合形成重複單元k之骨架的單體一起,使用1種以上之藉由聚合形成重複單元l的骨架之單體。As the ethylenically unsaturated monomer (d), one or more monomers that form the skeleton of the repeating unit k by polymerization are used. As the ethylenically unsaturated monomer (d), one or more monomers that form the skeleton of the repeating unit k by polymerization may be used together with the monomer that forms the skeleton of the repeating unit k by polymerization.

藉由聚合形成重複單元k的骨架之乙烯性不飽和單體(d),為(甲基)丙烯酸之碳原子數1~16之烷基酯,基於調整黏著劑組成物的剝離強度之觀點,較佳包含(甲基)丙烯酸之碳原子數2~16之烷基酯,更佳包含(甲基)丙烯酸之碳原子數4~12之烷基酯。作為(甲基)丙烯酸之碳原子數1~16之烷基酯,具體舉例為(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸異辛酯及(甲基)丙烯酸月桂酯。該等中,較佳為(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯及(甲基)丙烯酸異辛酯。本揭示中,關於(甲基)丙烯酸酯所用之碳原子數係指(甲基)丙烯醯氧基除外之殘基的碳原子數。The ethylenically unsaturated monomer (d) that forms the skeleton of the repeating unit k by polymerization is an alkyl ester of (meth)acrylic acid having 1 to 16 carbon atoms. From the perspective of adjusting the peel strength of the adhesive composition, Preferably, it contains an alkyl ester of (meth)acrylic acid having 2 to 16 carbon atoms, and more preferably, it contains an alkyl ester of (meth)acrylic acid having 4 to 12 carbon atoms. Specific examples of alkyl esters of (meth)acrylic acid having 1 to 16 carbon atoms include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, and (meth)acrylate. n-Butyl acrylate, tert-butyl (meth)acrylate, isobutyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isodecyl (meth)acrylate, (meth)acrylic acid n-Hexyl ester, isooctyl (meth)acrylate and lauryl (meth)acrylate. Among these, preferred are methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and iso(meth)acrylate. Octyl ester. In this disclosure, the number of carbon atoms used with respect to (meth)acrylate refers to the number of carbon atoms of the residue excluding the (meth)acryloxy group.

作為藉由聚合形成重複單元l的骨架之乙烯性不飽和單體(d),舉例為例如含碳原子數3~30之環狀烷基之(甲基)丙烯酸酯及含碳原子數6~20之芳香族基之(甲基)丙烯酸酯。Examples of the ethylenically unsaturated monomer (d) that forms the skeleton of the repeating unit l by polymerization include (meth)acrylate containing a cyclic alkyl group having 3 to 30 carbon atoms, and (meth)acrylate containing a cyclic alkyl group having 6 to 30 carbon atoms. 20 Aromatic (meth)acrylate.

作為藉由聚合形成重複單元l骨架之乙烯性不飽和單體(d)所使用之含有碳原子數3~30之環狀烷基的(甲基)丙烯酸酯,可舉例為例如(甲基)丙烯酸環己酯、(甲基)丙烯酸降冰片酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環烯氧基乙酯、(甲基)丙烯酸二環戊酯及(甲基)丙烯酸二環戊氧基乙酯。該等中,特佳使用(甲基)丙烯酸異冰片酯。含羧基之樹脂(b)的原料單體中包含含環狀烷基之(甲基)丙烯酸酯時,可提高含有使用含羧基之樹脂(b)製造的樹脂(A)之黏著劑組成物的耐熱性。Examples of the (meth)acrylate containing a cyclic alkyl group having 3 to 30 carbon atoms used as the ethylenically unsaturated monomer (d) used to form the skeleton of the repeating unit 1 by polymerization include (methyl) Cyclohexyl acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicycloalkenyloxyethyl (meth)acrylate, (meth)acrylate ) dicyclopentyl acrylate and dicyclopentyloxyethyl (meth)acrylate. Among these, isobornyl (meth)acrylate is particularly preferably used. When the raw material monomer of the carboxyl group-containing resin (b) contains a cyclic alkyl group-containing (meth)acrylate, the adhesive composition containing the resin (A) produced using the carboxyl group-containing resin (b) can be improved. Heat resistance.

作為藉由聚合形成重複單元l骨架之乙烯性不飽和單體(d)所使用之含碳原子數6~20之芳香族基的(甲基)丙烯酸酯,可舉例為例如(甲基)丙烯酸苄酯、(甲基)丙烯酸苯氧基乙酯、苯氧基聚乙二醇(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基丙酯及苯氧基聚丙二醇(甲基)丙烯酸酯。該等中,特佳使用(甲基)丙烯酸苄酯。含羧基之樹脂(b)的原料單體中含有含芳香族基的(甲基)丙烯酸酯時,可提高含有使用含羧基之樹脂(b)製造的樹脂(A)之黏著劑組成物的耐熱性。Examples of the (meth)acrylate containing an aromatic group having 6 to 20 carbon atoms used as the ethylenically unsaturated monomer (d) that forms the skeleton of the repeating unit 1 by polymerization include (meth)acrylic acid. Benzyl ester, phenoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, phenoxypropyl (meth)acrylate and phenoxypolypropylene glycol (meth)acrylate . Among these, benzyl (meth)acrylate is particularly preferably used. When the raw material monomer of the carboxyl group-containing resin (b) contains an aromatic group-containing (meth)acrylate, the heat resistance of the adhesive composition containing the resin (A) produced using the carboxyl group-containing resin (b) can be improved. sex.

含羧基之樹脂(b)的原料單體中,不僅是上述之含羧基之乙烯性不飽和單體(a)及上述乙烯性不飽和單體(d),亦可含有上述乙烯性不飽和單體(d)以外之可與含羧基之乙烯性不飽和單體(a)共聚之單體。The raw material monomers of the carboxyl group-containing resin (b) may include not only the above-mentioned carboxyl group-containing ethylenically unsaturated monomer (a) and the above-mentioned ethylenically unsaturated monomer (d), but also the above-mentioned ethylenically unsaturated monomer. Monomers other than monomer (d) that can be copolymerized with the carboxyl group-containing ethylenically unsaturated monomer (a).

作為上述乙烯性不飽和單體(d)以外之可與含羧基之乙烯性不飽和單體(a)共聚之乙烯性不飽和單體,可舉例為例如(甲基)丙烯酸烷氧基烷酯、烷氧基(聚)烷二醇(甲基)丙烯酸酯、含羥基之(甲基)丙烯酸酯、(甲基)丙烯酸氟化烷酯、(甲基)丙烯酸二烷胺基烷酯及(甲基)丙烯醯胺化合物。Examples of the ethylenically unsaturated monomer other than the above-mentioned ethylenically unsaturated monomer (d) that can be copolymerized with the carboxyl group-containing ethylenically unsaturated monomer (a) include (meth)acrylic acid alkoxyalkyl ester. , alkoxy (poly)alkylene glycol (meth)acrylate, hydroxyl-containing (meth)acrylate, fluorinated alkyl (meth)acrylate, dialkylaminoalkyl (meth)acrylate and ( Meth)acrylamide compound.

作為(甲基)丙烯酸烷氧基烷酯,可舉例為例如(甲基)丙烯酸乙氧基乙酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸丁氧基乙酯、(甲基)丙烯酸2-甲氧基乙氧基乙酯及(甲基)丙烯酸2-乙氧基乙氧基乙基酯。Examples of the alkoxyalkyl (meth)acrylate include ethoxyethyl (meth)acrylate, methoxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, 2-methoxyethoxyethyl methacrylate and 2-ethoxyethoxyethyl (meth)acrylate.

作為烷氧基(聚)烷二醇(甲基)丙烯酸酯,可舉例為例如甲氧基二乙二醇(甲基)丙烯酸酯、乙氧基二乙二醇(甲基)丙烯酸酯及甲氧基二丙二醇(甲基)丙烯酸酯。Examples of the alkoxy (poly)alkylene glycol (meth)acrylate include methoxy diethylene glycol (meth)acrylate, ethoxy diethylene glycol (meth)acrylate, and methoxy diethylene glycol (meth)acrylate. Oxydipropylene glycol (meth)acrylate.

作為含羥基之(甲基)丙烯酸酯,可舉例為例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥丙基酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸1,3-丁二醇酯、(甲基)丙烯酸1,4-丁二醇酯、(甲基)丙烯酸1,6-己二醇酯及(甲基)丙烯酸3-甲基戊二醇酯。Examples of the hydroxyl-containing (meth)acrylate include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 1,3-butanediol (meth)acrylate, 1,4-butanediol (meth)acrylate, 1,6-hexanediol (meth)acrylate and 3-methyl (meth)acrylate Pentylene glycol ester.

作為(甲基)丙烯酸氟化烷酯,可舉例為例如(甲基)丙烯酸八氟戊酯。Examples of the fluorinated alkyl (meth)acrylate include octafluoropentyl (meth)acrylate.

作為(甲基)丙烯酸二烷胺基烷酯,可舉例為例如(甲基)丙烯酸N,N-二甲基胺基乙酯及(甲基)丙烯酸N,N-二乙基胺基乙酯。Examples of the dialkylaminoalkyl (meth)acrylate include N,N-dimethylaminoethyl (meth)acrylate and N,N-diethylaminoethyl (meth)acrylate. .

作為(甲基)丙烯醯胺化合物,可舉例為例如(甲基)丙烯醯胺、N-甲基(甲基)丙烯醯胺、N-乙基(甲基)丙烯醯胺、N-丙基(甲基)丙烯醯胺、N-異丙基(甲基)丙烯醯胺、N-己基(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N,N-二乙基(甲基)丙烯醯胺、(甲基)丙烯醯基嗎啉及二丙酮丙烯醯胺。Examples of the (meth)acrylamide compound include (meth)acrylamide, N-methyl(meth)acrylamide, N-ethyl(meth)acrylamide, and N-propyl (meth)acrylamide, N-isopropyl(meth)acrylamide, N-hexyl(meth)acrylamide, N,N-dimethyl(meth)acrylamide, N,N -Diethyl(meth)acrylamide, (meth)acrylamide and diacetoneacrylamide.

作為乙烯性不飽和單體(d)以外之可與含羧基之乙烯性不飽和單體(a)共聚之單體的上述以外之具體例,可舉例為丙烯腈、甲基丙烯腈、苯乙烯、α-甲基苯乙烯、乙酸乙烯酯、丙酸乙烯酯、硬脂酸乙烯酯、氯乙烯、偏氯乙烯、烷基乙烯基醚、乙烯基甲苯、N-乙烯基吡啶、N-乙烯基吡咯烷酮、衣康酸二烷酯、富馬酸二烷酯、烯丙醇、羥丁基乙烯基醚、羥乙基乙烯基醚、4-羥基甲基環己基甲基乙烯基醚、三乙二醇單乙烯基醚、二乙二醇單乙烯基醚、甲基乙烯基酮、氯化烯丙基三甲基銨及二甲基烯丙基乙烯基酮。Specific examples of monomers other than the ethylenically unsaturated monomer (d) that can be copolymerized with the carboxyl group-containing ethylenically unsaturated monomer (a) other than the above include acrylonitrile, methacrylonitrile, and styrene. , α-methylstyrene, vinyl acetate, vinyl propionate, vinyl stearate, vinyl chloride, vinylidene chloride, alkyl vinyl ether, vinyl toluene, N-vinylpyridine, N-vinyl Pyrrolidone, dialkyl itaconate, dialkyl fumarate, allyl alcohol, hydroxybutyl vinyl ether, hydroxyethyl vinyl ether, 4-hydroxymethylcyclohexylmethyl vinyl ether, triethylene glycol Alcohol monovinyl ether, diethylene glycol monovinyl ether, methyl vinyl ketone, allyltrimethylammonium chloride and dimethylallyl vinyl ketone.

作為製造含羧基之樹脂(b)的方法未特別限制。例如,藉由使包含成為含羧基之樹脂(b)的構成成分的含羧基之乙烯性不飽和單體(a)與乙烯性不飽和單體(d)的原料單體,藉由習知聚合方法共聚合,可獲得含羧基之樹脂(b)。具體而言,作為聚合方法,可使用溶液聚合法、乳液聚合法、塊狀聚合法、懸浮聚合法、交替共聚合法等。該等聚合方法中,考慮到聚合後所得之含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)之加成反應,就反應容易性之觀點較佳使用溶液聚合法。The method for producing the carboxyl group-containing resin (b) is not particularly limited. For example, by polymerizing the raw material monomers including the carboxyl group-containing ethylenically unsaturated monomer (a) and the ethylenically unsaturated monomer (d) that constitute the carboxyl group-containing resin (b), by conventional polymerization. Through copolymerization, carboxyl-containing resin (b) can be obtained. Specifically, as the polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, alternating copolymerization, etc. can be used. Among these polymerization methods, considering the addition reaction between the carboxyl group-containing resin (b) obtained after polymerization and the alicyclic epoxy group-containing ethylenically unsaturated compound (c), it is preferably used from the viewpoint of ease of reaction. solution polymerization method.

藉由溶液聚合法製造含羧基之樹脂(b)時,根據需要,可使用自由基聚合起始劑及/或溶劑。When producing the carboxyl group-containing resin (b) by solution polymerization, a radical polymerization initiator and/or a solvent may be used as necessary.

作為自由基聚合起始劑未特別限制,可自習知者中適當選擇使用。The radical polymerization initiator is not particularly limited and can be appropriately selected and used by those skilled in the art.

作為自由基聚合起始劑,可舉例為例如2,2’-偶氮雙(異丁腈)、2,2’-偶氮雙(4-甲氧基-2,4-二甲基戊腈)、2,2’-偶氮雙(2,4-二甲基戊腈)、2,2’-偶氮雙(2-甲基丁腈)、1,1’-偶氮雙(環己烷-1-甲腈)、2,2’-偶氮雙(2,4,4-三甲基戊烷)、2,2’-偶氮雙(2-甲基丙酸)二甲酯等之偶氮系聚合起始劑;及過氧化苯甲醯、第三丁基過氧化氫、過氧化二-第三丁基、過氧苯甲酸第三丁酯、過氧化二異丙苯基、1,1-雙(第三丁基過氧基)-3,3,5-三甲基環己烷、1,1-雙(第三丁基過氧基)環十二烷等之過氧化物系聚合起始劑等之油溶性聚合起始劑。Examples of the radical polymerization initiator include 2,2'-azobis(isobutyronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile) ), 2,2'-Azobis(2,4-dimethylvaleronitrile), 2,2'-Azobis(2-methylbutyronitrile), 1,1'-Azobis(cyclohexane) alkane-1-carbonitrile), 2,2'-azobis(2,4,4-trimethylpentane), 2,2'-azobis(2-methylpropionate)dimethyl ester, etc. azo polymerization initiator; and benzoyl peroxide, tert-butyl hydroperoxide, di-tert-butyl peroxide, tert-butyl peroxybenzoate, dicumyl peroxide, Peroxidation of 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(tert-butylperoxy)cyclododecane, etc. It is an oil-soluble polymerization initiator such as polymerization initiator.

該等自由基聚合起始劑可單獨使用,亦可組合2種以上使用。These radical polymerization initiators may be used alone or in combination of two or more.

自由基聚合起始劑之使用量,相對於含羧基之樹脂(b)的原料單體之合計100質量份,較佳為0.01~5質量份,更佳為0.02~4質量份,又更佳為0.03~3質量份。The usage amount of the radical polymerization initiator is preferably 0.01 to 5 parts by mass, more preferably 0.02 to 4 parts by mass, and still more preferably 100 parts by mass of the raw material monomers of the carboxyl group-containing resin (b). It is 0.03~3 parts by mass.

作為製造含羧基之樹脂(b)時使用之聚合用溶劑,可使用一般之各種溶劑。作為溶劑,可舉例為例如乙酸乙酯、乙酸正丙酯、乙酸正丁酯等之酯;甲苯、二甲苯、苯等之芳香族烴;正己烷、正庚烷等之脂肪族烴;環己烷、甲基環己烷等之脂環式烴;甲基乙基酮、甲基異丁基酮等之酮;乙二醇、丙二醇、二丙二醇等之二醇;甲基溶纖劑、丙二醇單甲醚、二丙二醇單甲醚等之二醇醚;及乙二醇二乙酸酯、丙二醇單甲醚乙酸酯等之二醇酯。As the polymerization solvent used when producing the carboxyl group-containing resin (b), various general solvents can be used. Examples of the solvent include esters such as ethyl acetate, n-propyl acetate, and n-butyl acetate; aromatic hydrocarbons such as toluene, xylene, and benzene; aliphatic hydrocarbons such as n-hexane and n-heptane; and cyclohexane. Alicyclic hydrocarbons such as alkanes and methylcyclohexane; ketones such as methyl ethyl ketone and methyl isobutyl ketone; glycols such as ethylene glycol, propylene glycol and dipropylene glycol; methyl cellosolve, propylene glycol Glycol ethers such as monomethyl ether and dipropylene glycol monomethyl ether; and glycol esters such as ethylene glycol diacetate and propylene glycol monomethyl ether acetate.

該等溶劑可單獨使用,亦可組合2種以上使用。These solvents can be used alone or in combination of two or more.

製造含羧基之樹脂(b)時,包含含羧基之乙烯性不飽和單體(a)、乙烯性不飽和單體(d)與根據需要含有之其他單體的原料單體中所含之含羧基之乙烯性不飽和單體(a)的含量較佳為5~40質量%,更佳為7~30質量%,又更佳為10~25質量%。藉由使原料單體中含羧基之乙烯性不飽和單體(a)的含量為上述範圍,可自含有使含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)之加成反應製造之樹脂(A)的黏著劑組成物所得之黏著劑層的UV照射前的黏著力良好。When producing the carboxyl group-containing resin (b), the content contained in the raw material monomers including the carboxyl group-containing ethylenically unsaturated monomer (a), the ethylenically unsaturated monomer (d), and other monomers if necessary The content of the carboxyl ethylenically unsaturated monomer (a) is preferably 5 to 40 mass %, more preferably 7 to 30 mass %, and still more preferably 10 to 25 mass %. By setting the content of the carboxyl group-containing ethylenically unsaturated monomer (a) in the raw material monomer to the above range, it is possible to obtain the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound from the content of the carboxyl group-containing resin (b). The adhesive layer obtained from the adhesive composition of resin (A) produced by the addition reaction of (c) has good adhesion before UV irradiation.

(含脂環式環氧基之乙烯性不飽和化合物(c)) 含脂環式環氧基之乙烯性不飽和化合物(c)係具有脂環式環氧基之含乙烯性不飽和基的化合物,係提供通式(1-2)或通式(1-3)之構造的化合物。本揭示之脂環式環氧基係指於脂環式烴化合物之環上相鄰之2個碳原子上鍵結1個氧而形成之環氧基。 (Ethylenically unsaturated compound (c) containing alicyclic epoxy group) The ethylenically unsaturated compound (c) containing an alicyclic epoxy group is an ethylenically unsaturated compound having an alicyclic epoxy group, and is provided with the general formula (1-2) or the general formula (1-3 ) of the structure of the compound. The alicyclic epoxy group in this disclosure refers to an epoxy group formed by bonding one oxygen to two adjacent carbon atoms on the ring of an alicyclic hydrocarbon compound.

含脂環式環氧基之乙烯性不飽和化合物(c)係為了附加以式(1-1)表示之樹脂(A)的重複單元n中之下述部分構造式(1-2’)或(1-3’)而使用。式(1-1)中之重複單元n中之部分構造式(1-2’)或(1-3’)係源自含脂環式環氧基之乙烯性不飽和化合物(c)之基。The alicyclic epoxy group-containing ethylenically unsaturated compound (c) is for adding the following partial structural formula (1-2') to the repeating unit n of the resin (A) represented by the formula (1-1) or (1-3') and use. Part of the structural formula (1-2') or (1-3') in the repeating unit n in the formula (1-1) is a group derived from the ethylenically unsaturated compound (c) containing an alicyclic epoxy group .

(式(1-2’)及(1-3’)中,q係選自0、1及2之任一者。R 9為-H或-CH 3)。 (In formulas (1-2') and (1-3'), q is selected from any one of 0, 1 and 2. R 9 is -H or -CH 3 ).

作為含脂環式環氧基之乙烯性不飽和化合物(c),舉例為例如以下述式(1)或(2)表示之化合物。Examples of the alicyclic epoxy group-containing ethylenically unsaturated compound (c) include compounds represented by the following formula (1) or (2).

(式(1)中,R 9為-H或-CH 3。q係選自0、1及2之任一者)。 (式(2)中,R 9為-H或-CH 3。q係選自0、1及2之任一者)。 (In formula (1), R 9 is -H or -CH 3 . q is selected from any one of 0, 1 and 2). (In formula (2), R 9 is -H or -CH 3 . q is selected from any one of 0, 1 and 2).

式(1)中,R 9為-H或-CH 3。q係選自0、1及2之任一者,較佳q為1。 In formula (1), R 9 is -H or -CH 3 . q is selected from any one of 0, 1 and 2, preferably q is 1.

式(2)中,R 9為-H或-CH 3。q係選自0、1及2之任一者,較佳q為1。 In formula (2), R 9 is -H or -CH 3 . q is selected from any one of 0, 1 and 2, preferably q is 1.

含脂環式環氧基之乙烯性不飽和化合物(c)較佳係以式(1)表示之化合物,特佳為(甲基)丙烯酸3,4-環氧環氧環己基甲酯。The alicyclic epoxy group-containing ethylenically unsaturated compound (c) is preferably a compound represented by formula (1), and particularly preferably 3,4-epoxyepoxycyclohexylmethyl (meth)acrylate.

含脂環式環氧基之乙烯性不飽和化合物(c)可單獨使用,亦可組合2種以上使用。The alicyclic epoxy group-containing ethylenically unsaturated compound (c) can be used alone or in combination of two or more kinds.

樹脂(A)可藉由對含羧基之樹脂(b)的羧基加成反應含脂環式環氧基之乙烯性不飽和化合物(c)的脂環式環氧基而製造。The resin (A) can be produced by adding the alicyclic epoxy group of the alicyclic epoxy group-containing ethylenically unsaturated compound (c) to the carboxyl group of the carboxyl group-containing resin (b).

樹脂(A)較佳藉由對於含羧基之樹脂(b)的羧基1mol附加反應0.2~0.99mol,更佳為0.3~0.95mol,又更佳為0.6~0.95mol之含脂環式環氧基的乙烯性不飽和化合物(c)而製造。包含以上述比例使用含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)所得之樹脂(A)的黏著劑組成物,於UV照射前對被接著體顯示充分之黏著性,於UV照射後,黏著性降低可獲得更優異之易剝離性。而且,該黏著劑組成物,於UV照射前即使自高溫狀態返回到室溫黏著力亦不易變高,於UV照射後獲得優異的易剝離性,同時可有效防止剝離後對被接著體的殘糊。The resin (A) is preferably an alicyclic epoxy group-containing epoxy group by additionally reacting 0.2 to 0.99 mol for 1 mol of the carboxyl group of the carboxyl group-containing resin (b), more preferably 0.3 to 0.95 mol, and even more preferably 0.6 to 0.95 mol. Manufactured from ethylenically unsaturated compound (c). The adhesive composition containing the resin (A) obtained by using the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound (c) in the above ratio shows the adherend before UV irradiation. Sufficient adhesion, after UV irradiation, the adhesion is reduced to obtain better peelability. Moreover, the adhesive composition does not easily become high even if it returns from a high temperature state to room temperature before UV irradiation, and obtains excellent peelability after UV irradiation, and can effectively prevent residues on the adherend after peeling. paste.

製造樹脂(A)時之加成反應的溫度較佳為80~130℃,特佳為90~120℃。加成反應之溫度為80℃以上時,可獲得充分的反應速度。加成反應之溫度為130℃以下時,可防止藉由因熱之自由基聚合使雙鍵部交聯而產生凝膠化物。The temperature of the addition reaction when producing the resin (A) is preferably 80 to 130°C, particularly preferably 90 to 120°C. When the temperature of the addition reaction is above 80°C, sufficient reaction speed can be obtained. When the temperature of the addition reaction is 130°C or lower, it is possible to prevent the double bond portion from being cross-linked by thermal radical polymerization to produce a gel.

製造樹脂(A)時之附加反應中,根據需要,可使用習知觸媒。作為觸媒,可舉例為例如正丁基胺、正己基胺、苄基胺等之1級胺;三乙基胺、三丁基胺、二甲基苄基胺、1,8-二氮雜雙環[5.4.0]十一碳-7-烯、1,5-二氮雜雙環[4.3.0]壬-5-烯、1,4-二氮雜雙環[2.2.2]辛烷等之3級胺;苯胺、甲苯胺、苯二胺、1,8-二胺基萘等之芳香族胺;吡啶、2,6-二甲基吡啶、4-N,N-二甲基胺基吡啶等之吡啶化合物;氯化四甲基銨、溴化四甲基銨、溴化四丁基銨等之4級銨鹽;四甲基脲等之烷基脲;四甲基胍等之烷基胍;及三苯基膦、二甲基苯基膦、三環己基膦、三丁基膦、三(4-甲基苯基)膦、三(4-甲氧基苯基)膦、三(2,6-二甲基苯基)膦、三(2,6-二甲氧基苯基)膦、三(2,4,6-三甲基苯基)膦、三(2,4,6-三甲氧基苯基)膦等之膦化合物。In the additional reaction when producing the resin (A), a conventional catalyst can be used if necessary. Examples of the catalyst include primary amines such as n-butylamine, n-hexylamine, and benzylamine; triethylamine, tributylamine, dimethylbenzylamine, and 1,8-diaza Bicyclo[5.4.0]undec-7-ene, 1,5-diazabicyclo[4.3.0]non-5-ene, 1,4-diazabicyclo[2.2.2]octane, etc. 3rd grade amines; aromatic amines such as aniline, toluidine, phenylenediamine, 1,8-diaminonaphthalene, etc.; pyridine, 2,6-dimethylpyridine, 4-N,N-dimethylaminopyridine Pyridine compounds such as tetramethylammonium chloride, tetramethylammonium bromide, tetrabutylammonium bromide, etc.; 4-grade ammonium salts such as tetramethylurea; alkyl ureas such as tetramethylurea; tetramethylguanidine, etc. Guanidine; and triphenylphosphine, dimethylphenylphosphine, tricyclohexylphosphine, tributylphosphine, tris(4-methylphenyl)phosphine, tris(4-methoxyphenyl)phosphine, tris( 2,6-dimethylphenyl)phosphine, tris(2,6-dimethoxyphenyl)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tris(2,4,6 -Phosphine compounds such as trimethoxyphenyl)phosphine.

作為加成反應之觸媒,上述中,就反應性而言,較佳使用3級胺、吡啶化合物或膦化合物。As a catalyst for the addition reaction, among the above, a tertiary amine, a pyridine compound or a phosphine compound is preferably used in terms of reactivity.

加成反應中之觸媒使用量,相對於含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)的合計100質量份,較佳為0.01~20質量份,更佳為0.05~10質量份,最佳為0.1~5質量份。The amount of catalyst used in the addition reaction is preferably 0.01 to 20 parts by mass relative to a total of 100 parts by mass of the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound (c) , more preferably 0.05~10 parts by mass, and most preferably 0.1~5 parts by mass.

進而,加成反應時,亦可於反應系中導入具有聚合抑制效果之氣體,或可添加聚合抑制劑。藉由於反應系中導入具有聚合抑制效果之氣體,或添加聚合抑制劑,可防止加成反應時之凝膠化。Furthermore, during the addition reaction, a gas having a polymerization inhibitory effect may be introduced into the reaction system, or a polymerization inhibitor may be added. By introducing a gas with a polymerization inhibitory effect into the reaction system or adding a polymerization inhibitor, gelation during the addition reaction can be prevented.

作為具有聚合抑制效果之氣體,舉例為含有不落入系內物質爆炸範圍之程度的氧的氣體,例如空氣等。An example of a gas having a polymerization inhibitory effect is a gas containing oxygen to an extent that does not fall within the explosion range of the substances contained in the system, such as air.

作為聚合抑制劑,可使用習知者,未特別限制,可舉例為例如4-甲氧基苯酚、對苯二酚、甲氧基對苯二酚、2,6-二第三丁基苯酚、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚)及吩噻嗪。該等聚合抑制劑可單獨使用,亦可組合2種以上使用。As the polymerization inhibitor, those known in the art can be used without particular limitation. Examples include 4-methoxyphenol, hydroquinone, methoxyhydroquinone, 2,6-di-tert-butylphenol, 2,2'-methylenebis(4-methyl-6-tert-butylphenol) and phenothiazine. These polymerization inhibitors may be used alone or in combination of two or more types.

聚合抑制劑之使用量,相對於含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)的合計100質量份,較佳為0.005~5質量份,更佳為0.03~3質量份,最佳為0.05~1.5質量份。聚合抑制劑的量過少時,有聚合抑制效果不足之情況。另一方面,聚合抑制劑的量過多時,UV照射時之樹脂(A)的曝光感度有降低之虞。The usage amount of the polymerization inhibitor is preferably 0.005 to 5 parts by mass, more preferably 0.005 to 5 parts by mass, based on 100 parts by mass of the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound (c). It is 0.03~3 parts by mass, and the optimum is 0.05~1.5 parts by mass. When the amount of the polymerization inhibitor is too small, the polymerization inhibitory effect may be insufficient. On the other hand, when the amount of the polymerization inhibitor is too large, the exposure sensitivity of the resin (A) during UV irradiation may decrease.

併用具有聚合抑制作用的氣體與聚合抑制劑時,由於可減低所使用的聚合抑制劑的量,或可提高聚合抑制效果故而更佳。When a gas having a polymerization inhibitory effect and a polymerization inhibitor are used in combination, it is more preferable because the amount of the polymerization inhibitor used can be reduced or the polymerization inhibitory effect can be improved.

<光聚合起始劑(B)> 作為黏著劑組成物中所含之光聚合起始劑(B),可舉例為例如二苯甲酮、聯苯醯、苯偶因、ω-溴苯乙酮、氯丙酮、苯乙酮、2,2-二乙氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、對-二甲胺基苯乙酮、對-二甲胺基苯丙酮、2-氯二苯甲酮、4,4’-二氯二苯甲酮、4,4’-雙二乙胺基二苯甲酮,米氏酮、苯偶因甲醚、苯偶因異丁醚、苯偶因正丁醚、苄基甲基縮酮、1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、1-(4-異丙基苯基)-2-羥基-2-甲基丙烷-1-酮、甲基苯甲醯基甲酸酯、2,2-二乙氧基苯乙酮、4-N,N’-二甲基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-媽啉基丙烷-1-酮等之羰基系光聚合起始劑。 <Photopolymerization initiator (B)> Examples of the photopolymerization initiator (B) contained in the adhesive composition include benzophenone, biphenyl, benzoin, ω-bromoacetophenone, chloroacetone, acetophenone, 2 ,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, p-dimethylaminoacetophenone, p-dimethylaminoacetophenone, 2-chloro Benzophenone, 4,4'-dichlorobenzophenone, 4,4'-bisdiethylaminobenzophenone, Michler's ketone, benzoin methyl ether, benzoin isobutyl ether, benzene Coin n-butyl ether, benzyl methyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 1-(4-isopropyl Phenyl)-2-hydroxy-2-methylpropan-1-one, methylbenzoylcarboxylate, 2,2-diethoxyacetophenone, 4-N,N'-dimethyl Carbonyl-based photopolymerization initiators such as acetophenone and 2-methyl-1-[4-(methylthio)phenyl]-2-malinylpropan-1-one.

作為光聚合起始劑(B),亦可使用二苯基二硫化物、二苄基二硫化物、四乙基秋蘭姆二硫化物、四甲基銨單硫化物等之硫化物系光聚合起始劑;2,4,6-三甲基苯甲醯基二苯基氧化膦、2,4,6-三甲基苯甲醯基苯基乙氧基氧化膦等之醯基氧化膦;苯醌、蒽醌等之醌系光聚合起始劑;磺醯氯系光聚合起始劑;或噻噸酮、2-氯噻噸酮、2-甲基噻噸酮等之噻噸酮系光聚合起始劑。As the photopolymerization initiator (B), sulfide photopolymers such as diphenyl disulfide, dibenzyl disulfide, tetraethylthiuram disulfide, and tetramethylammonium monosulfide can also be used. Polymerization initiator; 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 2,4,6-trimethylbenzoylphenylethoxyphosphine oxide, etc. ; Quinone photopolymerization initiators such as benzoquinone and anthraquinone; sulfonyl chloride photopolymerization initiators; or thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, etc. It is a photopolymerization initiator.

該等光聚合起始劑(B)中,基於對黏著劑組成物之溶解性之觀點,較佳使用1-羥基環己基苯基酮及/或2,4,6-三甲基苯甲醯基二苯基氧化膦。Among these photopolymerization initiators (B), based on the solubility of the adhesive composition, 1-hydroxycyclohexyl phenyl ketone and/or 2,4,6-trimethylbenzoyl ketone are preferably used. diphenylphosphine oxide.

該等光聚合起始劑(B)可單獨使用,亦可組合2種以上使用。These photopolymerization initiators (B) can be used alone or in combination of two or more types.

黏著劑組成物中所含之光聚合起始劑(B),相對於樹脂(A)100質量份,較佳為0.1~5.0質量份,更佳為0.5~2.0質量份。相對於樹脂(A)100質量份的光聚合起始劑(B)之含量為0.1質量份以上時,可藉由UV照射以充分快速的硬化速度使黏著劑組成物硬化,藉此使UV照射後之黏著劑組成物的黏著力充分減小。相對於樹脂(A)100質量份之光聚合起始劑(B)的含量為5.0質量份以下時,具有包含黏著劑組成物之黏著劑層的黏著薄片,於貼粘於被接著體上後剝離時,黏著劑層不易殘留於被接著體上。相對於樹脂(A)100質量份之光聚合起始劑(B)的含量即使超過5.0質量份,由於未見到與光聚合起始劑(B)的含量相符的效果,故藉由將該含量設為5.0質量份以下,可經濟地製造黏著劑組成物。The photopolymerization initiator (B) contained in the adhesive composition is preferably 0.1 to 5.0 parts by mass, and more preferably 0.5 to 2.0 parts by mass relative to 100 parts by mass of the resin (A). When the content of the photopolymerization initiator (B) is 0.1 parts by mass or more based on 100 parts by mass of the resin (A), the adhesive composition can be hardened by UV irradiation at a sufficiently rapid curing speed, thereby allowing the UV irradiation to Afterwards, the adhesive force of the adhesive composition is sufficiently reduced. When the content of the photopolymerization initiator (B) is 5.0 parts by mass or less based on 100 parts by mass of the resin (A), the adhesive sheet having an adhesive layer containing the adhesive composition is adhered to the adherend. When peeling off, the adhesive layer will not easily remain on the adherend. Even if the content of the photopolymerization initiator (B) exceeds 5.0 parts by mass relative to 100 parts by mass of the resin (A), an effect consistent with the content of the photopolymerization initiator (B) is not seen, so by adding this When the content is 5.0 parts by mass or less, the adhesive composition can be produced economically.

<交聯劑(C)> 黏著劑組成物不僅含有樹脂(A)與光聚合起始劑(B),亦可含有交聯劑(C)。藉由含有交聯劑(C),可獲得於UV照射前之黏著力與UV照射後之黏著力的均衡更良好之黏著劑組成物。 <Cross-linking agent (C)> The adhesive composition not only contains resin (A) and photopolymerization initiator (B), but may also contain a cross-linking agent (C). By containing the cross-linking agent (C), an adhesive composition with a better balance between the adhesive force before UV irradiation and the adhesive force after UV irradiation can be obtained.

作為交聯劑(C)未特別限制,但較佳為具有2個以上對於重複單元n的羥基或重複單元n的羥基及重複單元m的羧基具有反應性之官能基的化合物。The cross-linking agent (C) is not particularly limited, but is preferably a compound having two or more functional groups reactive with the hydroxyl group of the repeating unit n or the hydroxyl group of the repeating unit n and the carboxyl group of the repeating unit m.

作為交聯劑(C),可舉例為例如2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、氫化甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4-二異氰酸酯、異佛爾酮二異氰酸酯、1,3-雙(異氰酸酯基甲基)環己烷、六亞甲基二異氰酸酯之異氰尿酸酯體、四甲基二甲苯二異氰酸酯、1,5-萘二異氰酸酯、三羥甲基丙烷之甲苯二異氰酸酯加成物、三羥甲基丙烷之二甲苯二異氰酸酯加成物、三苯基甲烷三異氰酸酯、亞甲基雙(4-苯基甲烷)三異氰酸酯等之異氰酸酯系化合物;1,3-雙(N,N’-二縮水甘油基胺基甲基)環己烷、雙酚A·表氯醇型之環氧樹脂、N,N’-[1,3-伸苯基雙(亞甲基)]雙[雙(環氧乙烷-2-基甲基)胺]、乙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、甘油二縮水甘油醚、甘油三縮水甘油醚、1,6-己二醇二縮水甘油醚、三羥甲基丙烷三縮水甘油醚、山梨醇聚縮水甘油醚、聚甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、二甘油聚縮水甘油醚等之環氧系化合物;四羥甲基甲烷-三-β-吖丙啶基丙酸酯、三羥甲基丙烷-三-β-吖丙啶基丙酸酯、N,N’-二苯基甲烷-4,4’-雙(1-吖丙啶基羧醯胺)、N,N’-六亞甲基-1,6-雙(1-吖丙啶基羧醯胺)等之吖丙啶系化合物;及六甲氧基甲基三聚氰胺、六乙氧基甲基三聚氰胺、六丙氧基甲基三聚氰胺、六丁氧基甲基三聚氰胺、六戊氧基甲基三聚氰胺、六己氧基甲基三聚氰胺等之三聚氰胺系化合物。Examples of the cross-linking agent (C) include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, hydrogenated toluene diisocyanate, 1,3-xylene diisocyanate, and 1,4-xylene diisocyanate. , diphenylmethane-4,4-diisocyanate, isophorone diisocyanate, 1,3-bis(isocyanatomethyl)cyclohexane, isocyanurate body of hexamethylene diisocyanate, tetra Methyl xylene diisocyanate, 1,5-naphthalene diisocyanate, toluene diisocyanate adduct of trimethylolpropane, xylene diisocyanate adduct of trimethylolpropane, triphenylmethane triisocyanate, Isocyanate compounds such as methyl bis(4-phenylmethane)triisocyanate; 1,3-bis(N,N'-diglycidylaminomethyl)cyclohexane, bisphenol A epichlorohydrin type Epoxy resin, N,N'-[1,3-phenylenebis(methylene)]bis[bis(ethylene oxide-2-ylmethyl)amine], ethylene glycol diglycidyl ether , polyethylene glycol diglycidyl ether, glycerol diglycidyl ether, glycerol triglycidyl ether, 1,6-hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, sorbitol polyglycidyl ether , polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether and other epoxy compounds; tetramethylolmethane-tri-β-aziridinyl propionate, trimethylolpropane -Tri-β-ethylenepropionylpropionate, N,N'-diphenylmethane-4,4'-bis(1-ethylenepropinylcarboxamide), N,N'-hexamethylene -Eminedine compounds such as 1,6-bis(1-ethylenecarboxamide); and hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, hexapropoxymethylmelamine, Melamine compounds such as butoxymethylmelamine, hexapentyloxymethylmelamine, and hexahexyloxymethylmelamine.

該等交聯劑(C)中,基於與樹脂(A)的反應性良好,較佳使用環氧系化合物及/或異氰酸酯系化合物。Among these cross-linking agents (C), epoxy compounds and/or isocyanate compounds are preferably used because of their good reactivity with the resin (A).

該等交聯劑(C)可單獨使用,亦可組合2種以上使用。These cross-linking agents (C) can be used alone or in combination of two or more kinds.

黏著劑組成物中所含之交聯劑(C),相對於樹脂(A)100質量份,較佳為0.05~10質量份,更佳為0.1~5質量份,又更佳為0.1~1.0質量份。相對於樹脂(A)100質量份之交聯劑(C)含量為0.05質量份以上時,於黏著劑組成物充分形成三維交聯構造。其結果,UV照射後之黏著劑組成物的黏著力可充分減小。相對於樹脂(A)100質量份之交聯劑(C)含量為10質量份以下時,UV照射前之黏著劑組成物的黏著力良好。The cross-linking agent (C) contained in the adhesive composition is preferably 0.05 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and still more preferably 0.1 to 1.0 parts by mass relative to 100 parts by mass of the resin (A). parts by mass. When the content of the cross-linking agent (C) is 0.05 parts by mass or more relative to 100 parts by mass of the resin (A), a three-dimensional cross-linked structure is fully formed in the adhesive composition. As a result, the adhesive force of the adhesive composition after UV irradiation can be sufficiently reduced. When the content of the cross-linking agent (C) is 10 parts by mass or less based on 100 parts by mass of the resin (A), the adhesive force of the adhesive composition before UV irradiation is good.

<其他成分> 黏著劑組成物根據需要,可含有上述樹脂(A)、光聚合起始劑(B)及交聯劑(C)以外的其他成分。作為其他成分可舉例為例如黏著賦予劑、溶劑及各種添加劑。 <Other ingredients> If necessary, the adhesive composition may contain other components besides the above-mentioned resin (A), photopolymerization initiator (B), and cross-linking agent (C). Examples of other components include tackifiers, solvents, and various additives.

(黏著賦予劑) 黏著賦予劑可無特別限制地使用習知者。作為黏著賦予劑可舉例為例如萜烯系黏著賦予樹脂、酚系黏著賦予樹脂、松香系黏著賦予樹脂、脂肪族系石油樹脂、芳香族系石油樹脂、共聚物系石油樹脂、脂環族系石油樹脂、二甲苯樹脂、環氧系黏著賦予樹脂、聚醯胺系黏著賦予樹脂、酮系黏著賦予樹脂及彈性體系黏著賦予樹脂。該等黏著賦予劑可單獨使用,亦可組合2種以上使用。 (Tackiness imparting agent) The adhesive imparting agent can be used by those known in the art without particular restrictions. Examples of the tackifier include terpene-based tackifier resin, phenol-based tackifier resin, rosin-based tackifier resin, aliphatic petroleum resin, aromatic petroleum resin, copolymer petroleum resin, and alicyclic petroleum resin. Resin, xylene resin, epoxy adhesive resin, polyamide adhesive resin, ketone adhesive resin and elastic system adhesive resin. These adhesive imparting agents can be used alone or in combination of two or more types.

黏著劑組成物包含黏著賦予劑時,其含量相對於樹脂(A)100質量份較佳為30質量份以下,更佳為5~20質量份。When the adhesive composition contains an adhesive imparting agent, its content is preferably 30 parts by mass or less, more preferably 5 to 20 parts by mass based on 100 parts by mass of the resin (A).

(溶劑) 溶劑在塗佈黏著劑組成物時,可基於調整黏著劑組成物的黏度之目的,為了稀釋黏著劑組成物而使用。 (solvent) When applying the adhesive composition, the solvent can be used to dilute the adhesive composition for the purpose of adjusting the viscosity of the adhesive composition.

作為溶劑可使用例如甲基乙基酮、甲基異丁基酮、丙酮、乙酸乙酯、乙酸正丙酯、四氫呋喃、二噁烷、環己酮、正己烷、甲苯、二甲苯、正丙醇、異丙醇等之有機溶劑。該等溶劑可單獨使用,亦可混合2種以上而使用。Examples of solvents that can be used include methyl ethyl ketone, methyl isobutyl ketone, acetone, ethyl acetate, n-propyl acetate, tetrahydrofuran, dioxane, cyclohexanone, n-hexane, toluene, xylene, and n-propanol. , isopropyl alcohol and other organic solvents. These solvents can be used individually or in mixture of 2 or more types.

(添加劑) 作為添加劑,可舉例為例如可塑劑、表面潤滑劑、調平劑、軟化劑、抗氧化劑、抗老化劑、光穩定劑、紫外線吸收劑、聚合抑制劑、苯并三唑等之光穩定劑、磷酸酯系及其他難燃劑、界面活性劑及抗靜電劑。 (additive) Examples of additives include plasticizers, surface lubricants, leveling agents, softeners, antioxidants, anti-aging agents, light stabilizers, ultraviolet absorbers, polymerization inhibitors, benzotriazole and other light stabilizers, Phosphate esters and other flame retardants, surfactants and antistatic agents.

[黏著劑組成物之製造方法] 黏著劑組成物可藉由以往習知之方法製造。 [Production method of adhesive composition] The adhesive composition can be produced by conventionally known methods.

例如,藉由將上述樹脂(A)及光聚合起始劑(B)、根據需要含有之交聯劑(C)、黏著賦予劑、溶劑、各種添加劑等之其他成分,使用以往習知方法予以混合、攪拌而製造。For example, the above-mentioned resin (A), photopolymerization initiator (B), cross-linking agent (C) if necessary, adhesion-imparting agent, solvent, various additives and other other components can be prepared by using conventional methods. Made by mixing and stirring.

一實施形態之黏著劑組成物適合作為形成黏著薄片之黏著劑層的材料,特佳作為形成再剝離型黏著薄片之黏著劑層的材料。The adhesive composition of one embodiment is suitable as a material for forming an adhesive layer of an adhesive sheet, and particularly preferably as a material for forming an adhesive layer of a releasable adhesive sheet.

一實施形態之黏著劑組成物由於包含以式(1-1)表示之樹脂(A)與光聚合起始劑(B),故藉由使用作為形成黏著薄片之黏著劑層的材料,可獲得對被接著體具有充分黏著力的黏著薄片。而且,該黏著薄片於貼附有黏著薄片之被接著體自處於高溫狀態返回到室溫而剝離,於UV照射後亦可獲得優異易剝離性,不易發生殘糊。Since the adhesive composition of one embodiment contains the resin (A) represented by the formula (1-1) and the photopolymerization initiator (B), it can be obtained by using the material as the adhesive layer forming the adhesive sheet. An adhesive sheet with sufficient adhesion to the adherend. Moreover, the adhesive sheet can be peeled off when the adherend to which the adhesive sheet is attached returns from a high-temperature state to room temperature. It can also obtain excellent peelability after UV irradiation and is less likely to cause residue.

[加工步驟] 半導體裝置之製造方法於前述保護步驟與後述之剝離步驟之間可具有加工步驟。 [Processing steps] The manufacturing method of a semiconductor device may have a processing step between the above-mentioned protection step and the later-described stripping step.

作為加工步驟,可無特別限制地適用以往習知之半導體裝置的製造所用之加工步驟。例如,使用保護步驟所用之黏著薄片作為晶圓的切割膠帶時,藉由保護步驟將黏著薄片貼附於形成有複數零件之晶圓後,實施作為加工步驟之切斷晶圓,切斷為各單零件(切割),成為元件小片(晶片)之切割步驟。實施半導體晶片之積層步驟作為加工步驟時,於保護步驟中僅保護附凸塊之被接著面之非安裝面,一面使未貼附黏著薄片之安裝面彼此接觸而積層,一面進行電性連接。As the processing steps, conventionally known processing steps used for manufacturing semiconductor devices can be applied without particular limitation. For example, when the adhesive sheet used in the protection step is used as a wafer dicing tape, after the adhesive sheet is attached to the wafer with multiple parts formed in the protection step, the wafer is cut as a processing step, and the wafer is cut into individual parts. A single part (cutting) becomes a cutting step for component chips (wafers). When the lamination step of semiconductor wafers is implemented as a processing step, only the non-mounting surface of the bonded surface with the bump is protected in the protection step, and the mounting surfaces without the adhesive sheet are brought into contact with each other for lamination, while electrical connection is made.

[加熱步驟] 半導體裝置之製造方法於前述保護步驟與後述之剝離步驟之間可具有加熱步驟。半導體裝置之製造方法於保護步驟後具有加工步驟時,前述加工步驟與加熱步驟之順序不受限制,但基於黏著薄片之保護機能及暫時固定機能,即最大限度發揮密著性能之觀點,較佳加工步驟與加熱步驟同時進行,或在加熱步驟之前實施加工步驟。 [Heating step] The manufacturing method of a semiconductor device may include a heating step between the above-mentioned protection step and the later-described stripping step. When the manufacturing method of a semiconductor device has a processing step after the protection step, the order of the aforementioned processing steps and heating steps is not limited, but it is preferable based on the protective function and temporary fixing function of the adhesive sheet, that is, from the perspective of maximizing the adhesion performance. The processing step may be performed simultaneously with the heating step, or may be performed before the heating step.

作為加熱步驟,可無特別限制地適用以往習知之半導體裝置的製造所用之加熱步驟。作為加熱步驟舉例為例如附凸塊之PCB的後硬化步驟、半導體晶片的濺鍍步驟及半導體晶片積層後之回焊步驟。As the heating step, a conventionally known heating step used in the production of semiconductor devices can be applied without particular limitation. Examples of the heating step include a post-hardening step for a PCB with bumps, a sputtering step for a semiconductor wafer, and a reflow step after stacking the semiconductor wafer.

加熱步驟之條件未特別限制。藉由在加熱步驟之前實施前述保護步驟,即使進行例如於150℃以上、180℃以上或200℃以上之高溫處理時,亦可良好地保護附凸塊之被接著面。加熱步驟之上限溫度未特別限制,但基於黏著薄片的耐熱性之觀點,較佳為300℃以下,更佳為270℃以下。加熱時間未特別限制,但可為例如1分鐘~180分鐘,較佳為1分鐘~120分鐘,更佳為1分鐘~60分鐘。The conditions of the heating step are not particularly limited. By performing the aforementioned protection step before the heating step, the bonded surface with the bumps can be well protected even when a high temperature treatment is performed, for example, above 150°C, above 180°C, or above 200°C. The upper limit temperature of the heating step is not particularly limited, but from the viewpoint of heat resistance of the adhesive sheet, it is preferably 300°C or lower, more preferably 270°C or lower. The heating time is not particularly limited, but may be, for example, 1 minute to 180 minutes, preferably 1 minute to 120 minutes, more preferably 1 minute to 60 minutes.

[UV照射步驟] UV照射步驟中,通常自黏著薄片之基材側照射UV。於被接著體具有透光性時,可自被接著體側向黏著薄片照射UV。藉由UV照射可使黏著劑層交聯硬化,提高黏著薄片之耐熱性,或可對黏著薄片賦予輕剝離性能。UV照射步驟於前述保護步驟與後述剝離步驟之間進行即可,前述加工步驟與前述加熱步驟之順序不受限制。 [UV irradiation step] In the UV irradiation step, UV is usually irradiated from the base material side of the adhesive sheet. When the adherend is translucent, UV can be irradiated from the side of the adherend to the adhesive sheet. UV irradiation can cross-link and harden the adhesive layer, improve the heat resistance of the adhesive sheet, or impart light peeling properties to the adhesive sheet. The UV irradiation step may be performed between the aforementioned protection step and the subsequent peeling step, and the order of the aforementioned processing step and the aforementioned heating step is not limited.

對貼附於被接著體之剝離前的黏著薄片進行UV照射時所使用之光源,可舉例為例如LED燈、高壓汞燈、超高壓汞燈、碳弧燈、氙氣燈、金屬鹵素燈、化學燈及黑光燈。UV照射較佳使用LED燈、高壓汞燈或金屬鹵素燈。Examples of light sources used for UV irradiation of the adhesive sheet attached to the adherend before peeling off include LED lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, carbon arc lamps, xenon lamps, metal halide lamps, chemical lamps and black lights. It is better to use LED lamps, high-pressure mercury lamps or metal halide lamps for UV irradiation.

照射至黏著薄片之UV照射量較佳為50~3000mJ/cm 2,更佳為100~600mJ/cm 2。照射至黏著薄片之UV照射量若為50mJ/cm 2以上,則可藉由UV照射以充分快的硬化速度使黏著劑層硬化,藉此可使UV照射後之黏著劑層的黏著力充分減小。照射至黏著薄片之UV照射量即使超過3000mJ/cm 2,由於未獲得相應的效果,故藉由將照射至黏著薄片的UV照射量設為3000mJ/cm 2以下,可減輕UV照射對被接著體之影響,同時可經濟地剝離黏著薄片。 The amount of UV irradiation irradiated to the adhesive sheet is preferably 50~3000mJ/cm 2 , more preferably 100~600mJ/cm 2 . If the amount of UV irradiation irradiated to the adhesive sheet is 50mJ/cm2 or more , the adhesive layer can be hardened by UV irradiation at a sufficiently fast curing speed, thereby fully reducing the adhesive force of the adhesive layer after UV irradiation. Small. Even if the UV irradiation dose to the adhesive sheet exceeds 3000mJ/cm 2 , corresponding effects are not obtained. Therefore, by setting the UV irradiation dose to the adhesive sheet to 3000mJ/cm 2 or less, the impact of UV irradiation on the adherend can be reduced. The impact of the adhesive film can be peeled off economically.

[剝離步驟] 剝離步驟係進行UV照射使黏著劑層硬化後,自附凸塊之被接著面剝離去除前述黏著薄片。藉由UV照射,使黏著劑中之不飽和鍵形成三維交聯構造而硬化。其結果,使黏著劑層之黏著力降低。隨後,自半導體裝置剝離黏著薄片。 [Peel-off step] In the peeling step, UV irradiation is performed to harden the adhesive layer, and then the adhesive sheet is peeled off from the bonded surface of the attached bump. Through UV irradiation, the unsaturated bonds in the adhesive form a three-dimensional cross-linked structure and harden. As a result, the adhesive force of the adhesive layer is reduced. Subsequently, the adhesive sheet is peeled off from the semiconductor device.

前述加工步驟可於前述保護步驟與前述UV照射步驟之間進行,亦可於前述UV照射步驟與前述剝離步驟之間進行。前述加熱步驟可於前述保護步驟與前述UV照射步驟之間進行,亦可於前述UV照射步驟與前述剝離步驟之間進行。The aforementioned processing step may be performed between the aforementioned protection step and the aforementioned UV irradiation step, or may be performed between the aforementioned UV irradiation step and the aforementioned peeling step. The aforementioned heating step may be performed between the aforementioned protecting step and the aforementioned UV irradiation step, or may be performed between the aforementioned UV irradiation step and the aforementioned peeling step.

依據一實施形態之半導體裝置之製造方法,即便在實施加熱步驟之情況下,亦不產生釋氣,而以附凸塊之被接著體表面上無殘糊之狀態獲得半導體裝置,故可毫無問題地對所得半導體裝置進行後續安裝步驟。 [實施例] According to the method of manufacturing a semiconductor device according to one embodiment, even when the heating step is performed, outgassing is not generated, and the semiconductor device is obtained in a state where there is no residue on the surface of the body to which the bumps are attached, so that it can be achieved without any problem. The resulting semiconductor device is then subjected to subsequent mounting steps. [Example]

以下,藉由實施例及比較例更具體說明本發明。又本發明並非僅限於以下實施例。Hereinafter, the present invention will be explained more specifically through Examples and Comparative Examples. In addition, the present invention is not limited to the following examples.

[製造例1:樹脂(A)之製造] <第1混合溶液之調製> 調製第1混合溶液,其如表1所示,含有:原料單體,該原料單體含有含羧基之乙烯性不飽和單體(a)的丙烯酸23.9質量份、作為可與上述(a)共聚合之乙烯性不飽和單體(d)的丙烯酸正丁酯71.8質量份及丙烯酸2-乙基己酯143.6質量份;及相對於含羧基之樹脂(b)的原料單體之合計100質量份為2.39質量份之聚合起始劑的2,2’-偶氮雙(異丁腈)。 [Manufacture Example 1: Production of Resin (A)] <Preparation of the first mixed solution> A first mixed solution was prepared, as shown in Table 1, containing: raw material monomers containing 23.9 parts by mass of acrylic acid of the carboxyl group-containing ethylenically unsaturated monomer (a) as a component that can be combined with the above (a) The polymerized ethylenically unsaturated monomer (d) is 71.8 parts by mass of n-butyl acrylate and 143.6 parts by mass of 2-ethylhexyl acrylate; and a total of 100 parts by mass of the raw material monomers of the carboxyl group-containing resin (b) It was 2.39 parts by mass of 2,2'-azobis(isobutyronitrile) as the polymerization initiator.

<第2混合溶液之調製> 調製第2混合溶液,其如表1所示,含有:含脂環式環氧基之乙烯性不飽和化合物(c)的甲基丙烯酸3,4-環氧環己基甲酯59.8質量份、相對於使用第1混合溶液所得之含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)之合計100質量份為1.5質量份之作為觸媒的三(4-甲基苯基)膦(TPTP)、及作為溶劑之乙酸正丁酯100.0質量份及甲苯91.1質量份。 <Preparation of the second mixed solution> A second mixed solution was prepared, as shown in Table 1, containing: 59.8 parts by mass of 3,4-epoxycyclohexylmethyl methacrylate of the alicyclic epoxy group-containing ethylenically unsaturated compound (c), relative to A total of 100 parts by mass of the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound (c) obtained by using the first mixed solution was 1.5 parts by mass of tris(4-) as a catalyst. Methylphenyl)phosphine (TPTP), 100.0 parts by mass of n-butyl acetate and 91.1 parts by mass of toluene as solvents.

於具備攪拌機、滴加漏管、冷卻管及氮氣導入管之四頸燒瓶中,饋入作為溶劑之乙酸正丁酯175.6質量份,於氮氣環境下升溫至80℃。接著,邊將反應溫度保持於80℃±2℃,邊將上述第1混合溶液歷時4小時均一滴加於上述四頸燒瓶中,滴加完成後,於80℃±2℃之溫度繼續攪拌6小時進行聚合,獲得含羧基之樹脂(b)。隨後,於該反應系中,添加相對於含羧基之樹脂(b)與含脂環式環氧基之乙烯性不飽和化合物(c)之合計100質量份為0.15質量份之作為聚合抑制劑之4-甲氧基苯酚。In a four-necked flask equipped with a stirrer, a dropping pipe, a cooling pipe and a nitrogen introduction pipe, 175.6 parts by mass of n-butyl acetate as a solvent was fed, and the temperature was raised to 80°C in a nitrogen atmosphere. Then, while maintaining the reaction temperature at 80°C ± 2°C, the above-mentioned first mixed solution was evenly added dropwise into the above-mentioned four-necked flask over 4 hours. After the dropwise addition was completed, stirring was continued for 6 hours at a temperature of 80°C ± 2°C. The polymerization is carried out for 1 hour to obtain carboxyl group-containing resin (b). Subsequently, to the reaction system, 0.15 parts by mass of a polymerization inhibitor was added to the total of 100 parts by mass of the carboxyl group-containing resin (b) and the alicyclic epoxy group-containing ethylenically unsaturated compound (c). 4-Methoxyphenol.

將經添加4-甲氧基苯酚之反應系升溫至100℃,歷時0.5小時滴加上述第2混合溶液後,於100℃之溫度繼續攪拌8小時,合成樹脂(A-1),冷卻至室溫(23℃)。The temperature of the reaction system after adding 4-methoxyphenol was raised to 100°C, and the above-mentioned second mixed solution was added dropwise over 0.5 hours, and then stirred at a temperature of 100°C for 8 hours to synthesize resin (A-1) and cool to room temperature. temperature (23℃).

樹脂(A-1)藉由核磁共振法(NMR法)鑑定之結果,為以通式(2-1)表示之化合物。以通式(2-1)表示之化合物的重複單元k係R 5不同之2種重複單元(k-1,k-2)。 The resin (A-1) was identified by the nuclear magnetic resonance method (NMR method) and was found to be a compound represented by the general formula (2-1). The repeating unit k of the compound represented by the general formula (2-1) is two types of repeating units (k-1, k-2) with different R 5 .

(式(2-1)中,k-1為33.6,k-2為46.6,m為1.6,k-1、k-2及m之合計為81.8。n為18.2)。 (In formula (2-1), k-1 is 33.6, k-2 is 46.6, m is 1.6, and the total of k-1, k-2 and m is 81.8. n is 18.2).

對於樹脂(A-1),藉由以下所示之方法調查重量平均分子量與玻璃轉移溫度。樹脂(A-1)的酸價係依據JIS K 0070:1992年測定。Regarding the resin (A-1), the weight average molecular weight and glass transition temperature were investigated by the method shown below. The acid value of the resin (A-1) was measured in accordance with JIS K 0070: 1992.

<重量平均分子量(Mw)> 使用凝膠滲透層析儀(昭和電工股份有限公司製,Shodex(註冊商標)GPC-101),於室溫下藉以下條件測定,進行聚苯乙烯換算而算出。 管柱:昭和電工股份有限公司製造,Shodex(註冊商標)LF-804 管柱溫度:40℃ 試料:樹脂(A)之0.2質量%四氫呋喃溶液 流量:1mL/分鐘 溶離液:四氫呋喃 檢測器:RI檢測器 <Weight average molecular weight (Mw)> Using a gel permeation chromatography (Shodex (registered trademark) GPC-101, manufactured by Showa Denko Co., Ltd.), it was measured under the following conditions at room temperature and calculated in terms of polystyrene. Pipe string: Manufactured by Showa Denko Co., Ltd., Shodex (registered trademark) LF-804 Tube string temperature: 40℃ Sample: 0.2 mass% tetrahydrofuran solution of resin (A) Flow: 1mL/min Eluate: Tetrahydrofuran Detector: RI detector

<玻璃轉移溫度(Tg)> 自樹脂(A-1)採取10mg的試料。使用示差掃描熱量計(DSC),使試料溫度以10℃/分鐘之升溫速度自-100℃變化至200℃進行示差掃描熱量測定,將因觀察到之玻璃轉移所致之吸熱起始溫度設為Tg。觀察到2個以上的吸熱起始溫度時,Tg為2個以上的吸熱起始溫度的簡單平均值。 <Glass transition temperature (Tg)> A 10 mg sample was collected from the resin (A-1). Using a differential scanning calorimeter (DSC), the sample temperature was changed from -100°C to 200°C at a heating rate of 10°C/min for differential scanning calorimetry. The starting temperature of the endotherm caused by the observed glass transfer was set to Tg. When more than 2 endothermic onset temperatures are observed, Tg is the simple average of the 2 or more endothermic onset temperatures.

[製造例2~12] 除了以表1所示之含量(質量份),使用含羧基之乙烯性不飽和單體(a)與乙烯性不飽和單體(d)、及聚合起始劑以外,與製造例1同樣調製第1混合溶液。 [Manufacturing Examples 2~12] It was prepared in the same manner as in Production Example 1, except that the carboxyl group-containing ethylenically unsaturated monomer (a), the ethylenically unsaturated monomer (d), and the polymerization initiator were used in the contents (parts by mass) shown in Table 1. 1st mixed solution.

除了以表1所示之含量(質量份),使用含脂環式環氧基之乙烯性不飽和化合物(c)與觸媒以外,與製造例1同樣調製第2混合溶液。A second mixed solution was prepared in the same manner as in Production Example 1, except that the alicyclic epoxy group-containing ethylenically unsaturated compound (c) and the catalyst were used in the contents (parts by mass) shown in Table 1.

除了使用上述第1混合溶液及上述第2混合溶液以外,與製造例1同樣獲得樹脂(A-2)~(A-12)。Resins (A-2) to (A-12) were obtained in the same manner as in Production Example 1, except that the above-mentioned first mixed solution and the above-mentioned second mixed solution were used.

與製造例1同樣分別鑑定樹脂(A-2)~(A-12)的結果,係以通式(2-2)~(2-12)表示的化合物。以通式(2-2)~(2-7)及(2-10)表示之化合物的重複單元k係R 5不同或R 1與R 5兩者不同之2種重複單元(k-1,k-2)。 Resins (A-2) to (A-12) were individually identified in the same manner as in Production Example 1 and found to be compounds represented by general formulas (2-2) to (2-12). The repeating unit k of the compound represented by the general formulas (2-2) to ( 2-7 ) and ( 2-10 ) is two types of repeating units (k-1, k-2).

樹脂(A-2)係以下述通式(2-2)表示之化合物。Resin (A-2) is a compound represented by the following general formula (2-2).

樹脂(A-3)係以下述通式(2-3)表示之化合物。Resin (A-3) is a compound represented by the following general formula (2-3).

樹脂(A-4)係以下述通式(2-4)表示之化合物。Resin (A-4) is a compound represented by the following general formula (2-4).

樹脂(A-5)係以下述通式(2-5)表示之化合物。Resin (A-5) is a compound represented by the following general formula (2-5).

樹脂(A-6)係以下述通式(2-6)表示之化合物。Resin (A-6) is a compound represented by the following general formula (2-6).

樹脂(A-7)係以下述通式(2-7)表示之化合物。Resin (A-7) is a compound represented by the following general formula (2-7).

樹脂(A-8)係以下述通式(2-8)表示之化合物。Resin (A-8) is a compound represented by the following general formula (2-8).

樹脂(A-9)係以下述通式(2-9)表示之化合物。Resin (A-9) is a compound represented by the following general formula (2-9).

樹脂(A-10)係以下述通式(2-10)表示之化合物。Resin (A-10) is a compound represented by the following general formula (2-10).

樹脂(A-11)係以下述通式(2-11)表示之化合物。Resin (A-11) is a compound represented by the following general formula (2-11).

樹脂(A-12)係以下述通式(2-12)表示之化合物。Resin (A-12) is a compound represented by the following general formula (2-12).

(式(2-2)中,k-1為31.9,k-2為47.6,m為1.8,k-1、k-2及m之合計為81.3。n為18.7)。 (In formula (2-2), k-1 is 31.9, k-2 is 47.6, m is 1.8, and the total of k-1, k-2 and m is 81.3. n is 18.7).

(式(2-3)中,k-1為69.7,k-2為16.0,m為1.2,k-1、k-2及m之合計為86.9。n為13.1)。 (In formula (2-3), k-1 is 69.7, k-2 is 16.0, m is 1.2, and the total of k-1, k-2 and m is 86.9. n is 13.1).

(式(2-4)中,k-1為52.3,k-2為34.1,m為2.9,k-1、k-2及m之合計為89.3。n為10.7)。 (In formula (2-4), k-1 is 52.3, k-2 is 34.1, m is 2.9, and the total of k-1, k-2 and m is 89.3. n is 10.7).

(式(2-5)中,k-1為10.6,k-2為51.7,m為4.4,k-1、k-2及m之合計為66.7,n為33.3)。 (In formula (2-5), k-1 is 10.6, k-2 is 51.7, m is 4.4, the total of k-1, k-2 and m is 66.7, and n is 33.3).

(式(2-6)中,k-1為56.4,k-2為23.6,m為0.2,k-1、k-2及m之合計為80.2。n為19.8)。 (In formula (2-6), k-1 is 56.4, k-2 is 23.6, m is 0.2, and the total of k-1, k-2 and m is 80.2. n is 19.8).

(式(2-7)中,k-1為14.4,k-2為72.2,m為1.1,k-1、k-2及m之合計為87.7。n為12.3)。 (In formula (2-7), k-1 is 14.4, k-2 is 72.2, m is 1.1, and the total of k-1, k-2 and m is 87.7. n is 12.3).

(式(2-8)中,k為76.4,m為3.5,k及m之合計為79.9。n為20.1)。 (In formula (2-8), k is 76.4, m is 3.5, and the total of k and m is 79.9. n is 20.1).

(式(2-9)中,k為79.9,m為11.5,k及m之合計為91.4。n為8.6)。 (In formula (2-9), k is 79.9, m is 11.5, and the total of k and m is 91.4. n is 8.6).

(式(2-10)中,k-1為33.5,k-2為46.6,m為4.4,k-1、k-2及m之合計為84.5。n為15.5)。 (In formula (2-10), k-1 is 33.5, k-2 is 46.6, m is 4.4, and the total of k-1, k-2 and m is 84.5. n is 15.5).

(式(2-11)中,k為65.9,l為11.7,m為1.8,k、l及m之合計為79.4。n為20.6)。 (In formula (2-11), k is 65.9, l is 11.7, m is 1.8, and the total of k, l and m is 79.4. n is 20.6).

(式(2-12)中,k為55.5,l為23.0,m為1.7,k、l及m之合計為80.2。n為19.8)。 (In formula (2-12), k is 55.5, l is 23.0, m is 1.7, and the total of k, l and m is 80.2. n is 19.8).

對於樹脂(A-2)~(A-12),分別與樹脂(A-1)同樣調查重量平均分子量、玻璃轉移溫度及酸價。結果示於表2。Regarding the resins (A-2) to (A-12), the weight average molecular weight, glass transition temperature, and acid value were investigated in the same manner as the resin (A-1). The results are shown in Table 2.

表1中分別顯示製造樹脂(A-1)~(A-12)所用之含羧基之乙烯性不飽和單體(a)、可與上述(a)共聚合之乙烯性不飽和單體(d)、聚合起始劑、含脂環式環氧基之乙烯性不飽和化合物(c)、觸媒、聚合抑制劑及溶劑的種類及使用量(質量份)。Table 1 shows the carboxyl group-containing ethylenically unsaturated monomer (a) used to produce resins (A-1) to (A-12) and the ethylenically unsaturated monomer (d) copolymerizable with the above (a). ), polymerization initiator, alicyclic epoxy group-containing ethylenically unsaturated compound (c), catalyst, polymerization inhibitor and solvent type and usage amount (mass parts).

[實施例1~11、比較例1~6] 於製造例1~12合成之樹脂(A-1)~(A-12)的反應溶液中,添加稀釋溶劑的乙酸乙酯,分別調整為樹脂(A-1)~(A-12)的含量為30質量%。使用樹脂(A-1)~(A-12)之含量為30質量%之樹脂(A-1)~(A-12)溶液,藉由以下所示之方法獲得黏著劑組成物。 [Examples 1 to 11, Comparative Examples 1 to 6] To the reaction solutions of the resins (A-1) to (A-12) synthesized in Production Examples 1 to 12, add ethyl acetate as a diluting solvent, and adjust the contents of the resins (A-1) to (A-12) respectively. is 30% by mass. Using a resin (A-1) ~ (A-12) solution containing 30% by mass of resin (A-1) ~ (A-12), an adhesive composition was obtained by the method shown below.

於活性線經阻斷之室內於塑膠容器中,分別以表3及表4所示之含量(質量份)添加表3及表4所示之樹脂(A)與光聚合起始劑(B)及交聯劑(C)並攪拌,獲得實施例1~11、比較例1~6之黏著劑組成物。In a plastic container in a room where active lines are blocked, add the resin (A) and photopolymerization initiator (B) shown in Table 3 and Table 4 at the contents (parts by mass) shown in Table 3 and Table 4 respectively. and cross-linking agent (C) and stirred to obtain the adhesive compositions of Examples 1 to 11 and Comparative Examples 1 to 6.

表3及表4中的樹脂(A-1)~(A-12)的數值係樹脂(A-1)~(A-12)的含量為30質量%之樹脂(A-1)~(A-12)溶液的固形分,即樹脂(A-1)~(A-12)的使用量(質量份)。光聚合起始劑(B)的數值係相對於樹脂(A)100質量份之光聚合起始劑(B)的使用量(質量份)。交聯劑(C)的數值係相對於樹脂(A)100質量份之交聯劑(C)的使用量(質量份)。The numerical values of resins (A-1) to (A-12) in Table 3 and Table 4 are resins (A-1) to (A) in which the content of resin (A-1) to (A-12) is 30% by mass. -12) The solid content of the solution, that is, the amount of resin (A-1) ~ (A-12) used (parts by mass). The numerical value of the photopolymerization initiator (B) is the usage amount (parts by mass) of the photopolymerization initiator (B) relative to 100 parts by mass of the resin (A). The numerical value of the cross-linking agent (C) is the usage amount (parts by mass) of the cross-linking agent (C) relative to 100 parts by mass of the resin (A).

表3及表4中之「TETRAD-C」、「TETRAD-X」、「HX」及「TPO」分別表示如下。 「TETRAD-C」:1,3-雙(N,N’-二縮水甘油胺基甲基)環己烷(三菱氣體化學股份有限公司製,商品名:TETRAD-C) 「TETRAD-X」:N,N’-[1,3-伸苯基雙(亞甲基)]雙[雙(環氧乙烷-2-基甲基)胺](三菱氣體化學股份有限公司製,商品名:TETRAD-X) 「HX」:六亞甲基二異氰酸酯之異氰尿酸酯體(TOSOH股份有限公司製,商品名:CORONATE(註冊商標)HX) 「TPO」:2,4,6-三甲基苯甲醯基二苯基氧化膦(BASF公司製,商品名:L-TPO) "TETRAD-C", "TETRAD-X", "HX" and "TPO" in Table 3 and Table 4 are respectively represented as follows. “TETRAD-C”: 1,3-bis(N,N’-diglycidylaminomethyl)cyclohexane (manufactured by Mitsubishi Gas Chemical Co., Ltd., trade name: TETRAD-C) "TETRAD-X": N,N'-[1,3-phenylenebis(methylene)]bis[bis(oxirane-2-ylmethyl)amine] (Mitsubishi Gas Chemical Co., Ltd. Made, trade name: TETRAD-X) "HX": Isocyanurate body of hexamethylene diisocyanate (manufactured by TOSOH Co., Ltd., trade name: CORONATE (registered trademark) HX) "TPO": 2,4,6-trimethylbenzyldiphenylphosphine oxide (manufactured by BASF, trade name: L-TPO)

[黏著力測定用黏著薄片之製造] 將實施例1~11及比較例1~6之黏著劑組成物直接以乾燥後的膜厚為20μm之方式塗佈於基材上,於100℃加熱乾燥2分鐘形成黏著劑層。隨後,藉由在黏著劑層上貼合剝離薄片,獲得實施例1~11及比較例1~6之黏著薄片。作為基材,使用厚度25μm之聚醯胺(PA)薄膜。作為剝離薄片,使用厚度25μm之聚對苯二甲酸乙二酯(PET)薄膜。 [Manufacturing of adhesive sheets for measuring adhesive force] The adhesive compositions of Examples 1 to 11 and Comparative Examples 1 to 6 were directly coated on the substrate such that the dried film thickness was 20 μm, and heated and dried at 100° C. for 2 minutes to form an adhesive layer. Subsequently, by laminating the release sheet on the adhesive layer, the adhesive sheets of Examples 1 to 11 and Comparative Examples 1 to 6 were obtained. As the base material, a polyamide (PA) film with a thickness of 25 μm was used. As the release sheet, a polyethylene terephthalate (PET) film with a thickness of 25 μm was used.

[凸塊保護用黏著薄片之製造] 將實施例1~11及比較例1~6之黏著劑組成物直接以乾燥後之膜厚為100μm之方式塗佈於基材上,在100℃加熱乾燥2分鐘形成黏著劑層。隨後,將剝離薄片貼合於黏著劑層上,於40℃下以烘箱養生3天,使黏著劑層交聯硬化,藉此獲得實施例1~11及比較例1~6之黏著薄片。作為基材,使用厚度25μm之聚醯胺(PA)薄膜。作為剝離薄片,使用厚度25μm之聚對苯二甲酸乙二酯(PET)薄膜。 [Manufacturing of adhesive sheets for bump protection] The adhesive compositions of Examples 1 to 11 and Comparative Examples 1 to 6 were directly coated on the substrate such that the film thickness after drying was 100 μm, and heated and dried at 100° C. for 2 minutes to form an adhesive layer. Subsequently, the peeled sheet was attached to the adhesive layer and cured in an oven at 40° C. for 3 days to cross-link and harden the adhesive layer, thereby obtaining the adhesive sheets of Examples 1 to 11 and Comparative Examples 1 to 6. As the base material, a polyamide (PA) film with a thickness of 25 μm was used. As the release sheet, a polyethylene terephthalate (PET) film with a thickness of 25 μm was used.

針對如此所得之實施例1~11及比較例1~6之黏著薄片,藉以下所示之方法進行以下所示項目之評價。結果示於表3及表4。The adhesive sheets of Examples 1 to 11 and Comparative Examples 1 to 6 thus obtained were evaluated for the following items by the method shown below. The results are shown in Table 3 and Table 4.

[UV照射前剝離強度] 將黏著力測定用黏著薄片切取出長25mm,寬100mm的大小,剝離剝離薄片使黏著劑層露出。其次,以使露出之黏著劑層(測定面)與玻璃板接觸之方式,將黏著薄片貼附於玻璃板,以2kg橡膠輥(寬:約50mm)往返1次,獲得UV照射前剝離強度之測定用樣品。 [Peel strength before UV irradiation] Cut out the adhesive sheet for measuring adhesion into a size of 25mm long and 100mm wide, and peel off the peeling sheet to expose the adhesive layer. Next, attach the adhesive sheet to the glass plate in such a way that the exposed adhesive layer (measurement surface) is in contact with the glass plate, and use a 2kg rubber roller (width: about 50mm) to go back and forth once to obtain the peel strength before UV irradiation. Samples for measurement.

所得測定用樣品,於溫度23℃、濕度50%的環境下放置24小時。隨後,根據JIS Z 0237:2009,以300mm/分鐘的剝離速度進行180°方向之拉伸試驗,測定黏著薄片對玻璃板的剝離強度(N/25mm)。The obtained sample for measurement was placed in an environment with a temperature of 23°C and a humidity of 50% for 24 hours. Subsequently, according to JIS Z 0237:2009, a tensile test in the 180° direction was performed at a peeling speed of 300mm/min to measure the peeling strength of the adhesive sheet to the glass plate (N/25mm).

[UV照射後剝離強度] 製作與UV照射前剝離強度的測定樣品相同者,以照射量1000mJ/cm 2的條件自黏著薄片側之面照射紫外線(UV),獲得UV照射後剝離強度的測定用樣品。UV照射係使用輸送機型紫外線照射裝置(EYE GRAPHIC公司製,2KW燈,80W/cm)。 [Peel strength after UV irradiation] Prepare the same sample for measuring the peel strength before UV irradiation, and irradiate ultraviolet (UV) from the adhesive sheet side at an irradiation dose of 1000 mJ/cm 2 to obtain the peel strength after UV irradiation. Sample. For the UV irradiation system, a conveyor type ultraviolet irradiation device (manufactured by EYE GRAPHIC, 2KW lamp, 80W/cm) was used.

針對所得測定樣品,與「UV照射前剝離強度」同樣,測定黏著薄片對玻璃板之剝離強度(N/25mm)。For the obtained measurement sample, the peeling strength (N/25mm) of the adhesive sheet to the glass plate was measured in the same manner as the "peeling strength before UV irradiation".

[加熱試驗後之殘糊] 剝離凸塊保護用黏著薄片之剝離薄片使黏著劑層露出。其次,將露出的黏著劑層與附凸塊之PCB(凸塊直徑φ=20μm,凸塊間距離30μm,凸塊高度45μm),使用安裝器(Hugle電子公司製HS7800),於40℃處理10分鐘進行貼附。其次,於200℃進行2小時熱處理,放冷後自黏著薄片之基材側以照射量1000mJ/cm 2之條件照射紫外線(UV)。UV照射係使用輸送機型紫外線照射裝置(EYE GRAPHIC公司製,2KW燈,80W/cm)。隨後,剝離黏著薄片,以光學顯微鏡觀察附凸塊之PCB,殘糊面積為附凸塊之PCB全體的5%以下時,殘糊評價為「A」,大於5%且未達20%時評價為「B」,為20%以上時評價為「C」。 [Residue after heating test] Peel off the bump protection adhesive sheet to expose the adhesive layer. Next, the exposed adhesive layer and the PCB with bumps (bump diameter φ = 20 μm, distance between bumps 30 μm, bump height 45 μm) were processed using a mounter (HS7800 manufactured by Hugle Electronics Co., Ltd.) at 40°C for 10 minutes to attach. Next, heat treatment is performed at 200°C for 2 hours, and after cooling, ultraviolet (UV) is irradiated from the base material side of the adhesive sheet at an irradiation dose of 1000 mJ/cm 2 . For the UV irradiation system, a conveyor type ultraviolet irradiation device (manufactured by EYE GRAPHIC, 2KW lamp, 80W/cm) was used. Then, peel off the adhesive sheet and observe the PCB with bumps using an optical microscope. If the residual paste area is less than 5% of the entire PCB with bumps, the residual paste is evaluated as "A". If it is greater than 5% and less than 20%, the evaluation is "A". It is "B", and when it is 20% or more, it is evaluated as "C".

[階差埋入性1] 剝離凸塊保護用黏著薄片的剝離薄片使黏著劑層露出。其次,將露出的黏著劑層與附凸塊之PCB(凸塊徑φ=20μm,凸塊間距離30μm,凸塊高度45μm),使用安裝器(Hugle電子公司製HS7800),於40℃處理5分鐘進行貼附。自凸塊保護黏著薄片側以光學顯微鏡觀察,氣泡混入之面積為附凸塊之PCB全體的1%以下時,階差埋入性1評價為「A」,大於1%且未達10%時評價為「B」,為10%以上時評價為「C」。 [Step embeddability 1] The peeling sheet of the bump protecting adhesive sheet exposes the adhesive layer. Next, the exposed adhesive layer and the PCB with bumps (bump diameter φ = 20 μm, distance between bumps 30 μm, bump height 45 μm) were processed using a mounter (HS7800 manufactured by Hugle Electronics Co., Ltd.) at 40°C for 5 minutes to attach. When observed with an optical microscope from the side of the bump protection adhesive sheet, if the area where air bubbles are mixed is less than 1% of the entire PCB with bumps, the step embedding property 1 is evaluated as "A"; if it is greater than 1% and less than 10% The evaluation is "B", and when it is 10% or more, the evaluation is "C".

[階差埋入性2] 對於藉由階差埋入性1之操作所得之貼附有凸塊保護用黏著薄片之附凸塊之PCB,以刀片(東京精密公司製「SDC200 R100NMR」,曲線幅度:0.3mm,刀片轉速:28000rpm,切削速度:30mm/sec,切入深度:100μm)進行切割。以光學顯微鏡自凸塊保護用黏著薄片側觀察藉由切割而小片化之附凸塊之PCB,於氣泡混入之面積為附凸塊之PCB全體的1%以下時,階差埋入性2評價為「A」,大於1%且未達10%時評價為「B」,為10%以上時評價為「C」。 [Step embeddability 2] For the PCB with bumps and the adhesive sheet for bump protection that is obtained by the operation of step embedability 1, use a blade ("SDC200 R100NMR" manufactured by Tokyo Seiko Co., Ltd., curve width: 0.3mm, blade rotation speed: 28000rpm, cutting speed: 30mm/sec, cutting depth: 100μm) for cutting. The bump-attached PCB cut into small pieces was observed with an optical microscope from the bump protection adhesive sheet side. When the area where air bubbles are mixed is less than 1% of the entire bump-attached PCB, the step embedding property 2 is evaluated. It is "A", when it is greater than 1% and less than 10%, it is evaluated as "B", and when it is 10% or more, it is evaluated as "C".

[階差埋入性3] 對於藉由階差埋入性2之操作而經小片化之貼附有凸塊保護用黏著薄片之附凸塊之PCB,於200℃進行2小時的熱處理。將附凸塊之PCB放冷後,以光學顯微鏡自凸塊保護用黏著薄片側進行觀察,氣泡混入之面積為附凸塊之PCB全體的1%以下時,階差埋入性3評價為「A」,大於1%且未達10%時評價為「B」,為10%以上時評價為「C」。 [Step embeddability 3] The PCB with bumps and the adhesive sheet for bump protection that has been cut into small pieces by the operation of step embedding property 2 is heat treated at 200°C for 2 hours. After the PCB with bumps is allowed to cool, observe it with an optical microscope from the bump protection adhesive sheet side. If the area where bubbles are mixed is less than 1% of the entire PCB with bumps, the step embedding property is evaluated as "3" A", when it is greater than 1% and less than 10%, it is evaluated as "B", and when it is more than 10%, it is evaluated as "C".

如表3所示,實施例1~11之黏著薄片之「加熱試驗後的殘糊」均為A或B。且,該等黏著薄片於「階差埋入性1」、「階差埋入性2」、「階差埋入性3」之任一評價中均為A,對附凸塊之PCB的密著性良好。As shown in Table 3, the "residual paste after heating test" of the adhesive sheets of Examples 1 to 11 are all A or B. Moreover, these adhesive sheets were rated A in any of the evaluations of "Step Embedding Properties 1", "Step Embedding Properties 2", and "Step Difference Embedding Properties 3", and the sealing of the PCB with bumps was Good adhesion.

相對於此,如表4所示,樹脂(A)的分子量超過55萬的比較例1~6之黏著薄片,於「加熱試驗後之殘糊」雖均為A,但於「階差埋入性1」、「階差埋入性2」、「階差埋入性3」為B或C,對附凸塊之PCB的密著性不足。On the other hand, as shown in Table 4, for the adhesive sheets of Comparative Examples 1 to 6 in which the molecular weight of the resin (A) exceeds 550,000, the "residual paste after the heating test" is all A, but the "step difference embedding" is "Property 1", "Step Embedding Property 2", and "Step Embedding Property 3" are B or C, indicating insufficient adhesion to PCBs with bumps.

Claims (12)

一種半導體裝置之製造方法,其包含下述步驟: 將具有薄片狀基材與形成於前述基材上之黏著劑層之黏著薄片貼附於半導體裝置之附凸塊之被接著面之保護步驟, 對前述黏著薄片進行UV照射,使前述黏著劑層硬化之UV照射步驟,及 將前述黏著薄片自前述附凸塊之被接著面剝離去除之剝離步驟, 前述黏著劑層係黏著劑組成物之硬化物, 前述黏著劑組成物包含以下述通式(1-1)表示之樹脂(A)與光聚合起始劑(B),前述樹脂(A)之重量平均分子量為5萬~55萬, (式(1-1)中,k、l、m及n表示設為k+l+m+n=100時之莫耳組成比,k係超過0~92以下,l係0~50,m係超過0~90以下,k、l及m之合計為65~95,n為5~35,R 1~R 4為-H或-CH 3,R 5為碳原子數1~16之烷基,R 6為碳原子數3~30之脂環式烴基或碳原子數6~20之芳香族烴基,R 7為-H或-(CH 2) j-COOH(式中之j為1或2),R 8為以上述通式(1-2)或(1-3)表示之基,式(1-2)及(1-3)中,p及q係選自0、1及2之任一者,於p為0時s係0,於p為1或2時s係1,R 9為-H或-CH 3)。 A manufacturing method of a semiconductor device, which includes the following steps: a step of protecting an adhesive sheet having a sheet-like base material and an adhesive layer formed on the base material on the bonded surface of the bump attached to the semiconductor device, UV irradiation of the adhesive sheet to harden the adhesive layer, and a peeling step of peeling and removing the adhesive sheet from the bonded surface with the bumps. The adhesive layer is the hardening of the adhesive composition. The aforementioned adhesive composition includes a resin (A) represented by the following general formula (1-1) and a photopolymerization initiator (B). The weight average molecular weight of the aforementioned resin (A) is 50,000 to 550,000. (In formula (1-1), k, l, m and n represent the molar composition ratio when k+l+m+n=100, k is more than 0~92 or less, l is 0~50, m It is more than 0 to less than 90, the total of k, l and m is 65 to 95, n is 5 to 35, R 1 ~ R 4 is -H or -CH 3 , R 5 is an alkyl group with 1 to 16 carbon atoms. , R 6 is an alicyclic hydrocarbon group with 3 to 30 carbon atoms or an aromatic hydrocarbon group with 6 to 20 carbon atoms, R 7 is -H or -(CH 2 ) j -COOH (j in the formula is 1 or 2 ), R 8 is a group represented by the above general formula (1-2) or (1-3). In formulas (1-2) and (1-3), p and q are selected from 0, 1 and 2. In either case, when p is 0, s represents 0, when p is 1 or 2, s represents 1, and R 9 represents -H or -CH 3 ). 如請求項1之半導體裝置之製造方法,其中前述式(1-1)中之n係7~33。For example, the manufacturing method of a semiconductor device according to claim 1, wherein n in the aforementioned formula (1-1) is 7 to 33. 如請求項1或2之半導體裝置之製造方法,其中前述式(1-1)中之k係45~90,l係4~40,m係1~20。For example, the manufacturing method of a semiconductor device according to claim 1 or 2, wherein k in the aforementioned formula (1-1) is 45 to 90, l is 4 to 40, and m is 1 to 20. 如請求項1或2之半導體裝置之製造方法,其中前述黏著劑組成物進而含有交聯劑(C)。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the adhesive composition further contains a cross-linking agent (C). 如請求項1或2之半導體裝置之製造方法,其中前述樹脂(A)之玻璃轉移溫度為-80~0℃。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the glass transition temperature of the resin (A) is -80~0°C. 如請求項1或2之半導體裝置之製造方法,其中於前述保護步驟與前述剝離步驟之間,具有150℃以上之加熱步驟。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein there is a heating step of 150° C. or above between the protection step and the stripping step. 如請求項1或2之半導體裝置之製造方法,其中於前述保護步驟與前述剝離步驟之間,具有加工步驟。The manufacturing method of a semiconductor device as claimed in claim 1 or 2, wherein there is a processing step between the aforementioned protection step and the aforementioned stripping step. 如請求項1或2之半導體裝置之製造方法,其中於前述保護步驟與前述UV照射步驟之間,具有150℃以上之加熱步驟。The manufacturing method of a semiconductor device according to claim 1 or 2, wherein there is a heating step of 150°C or above between the aforementioned protection step and the aforementioned UV irradiation step. 如請求項1或2之半導體裝置之製造方法,其中於前述保護步驟與前述UV照射步驟之間,具有加工步驟。The manufacturing method of a semiconductor device according to claim 1 or 2, wherein there is a processing step between the aforementioned protection step and the aforementioned UV irradiation step. 如請求項1或2之半導體裝置之製造方法,其中於前述UV照射步驟與前述剝離步驟之間,具有150℃以上之加熱步驟。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein there is a heating step of 150° C. or above between the UV irradiation step and the peeling step. 如請求項1或2之半導體裝置之製造方法,其中於前述UV照射步驟與前述剝離步驟之間,具有加工步驟。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein there is a processing step between the UV irradiation step and the peeling step. 一種半導體裝置,係由如請求項1至11中任一項之半導體裝置之製造方法所製造。A semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 11.
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