TW202332996A - Positioning device, lithography device, and article production method - Google Patents
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- 230000008569 process Effects 0.000 claims description 10
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明,有關定位裝置、光刻裝置及物品製造方法。The present invention relates to a positioning device, a photolithography device and an article manufacturing method.
在曝光裝置等的光刻裝置中,要求高精度且高速地進行基板的位置控制。隨著近年來的基板的大型化、薄型化,基板所產生的形變成為無法比以往更加忽視者。基板的形變,在基板搬送時產生,在將基板載置於基板載置部之後,或者在載置後吸附基板之後亦可能殘留。如果在基板產生形變的狀態下對基板進行曝光,則曝光結果亦產生形變,重疊精度可能降低。另外,雖可考慮追加用於降低基板所產生的形變的步驟,惟如此之步驟亦會導致產距時間的增加。In photolithography apparatuses such as exposure apparatuses, it is required to control the position of the substrate with high precision and at high speed. As substrates have become larger and thinner in recent years, deformation of the substrate has become something that cannot be ignored more than ever. The deformation of the substrate occurs when the substrate is transported, and may remain after the substrate is placed on the substrate placement portion, or after the substrate is adsorbed after being placed. If the substrate is exposed while the substrate is deformed, the exposure result will also be deformed, and the overlay accuracy may be reduced. In addition, although additional steps for reducing the deformation of the substrate can be considered, such steps will also lead to an increase in the production lead time.
在專利文獻1中,已揭露在利用空氣使基板浮起的狀態下吸附支撐基板並使基板旋轉的技術(θ校正驅動)。在專利文獻2中已揭露以下技術:驅動於基板法線方向上的輻條狀的吸附保持部將基板吸附保持在基板載置部的上方並予以旋轉。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2013-221961號公報 [專利文獻2]日本特開2000-100895號公報 [Patent Document 1] Japanese Patent Application Publication No. 2013-221961 [Patent Document 2] Japanese Patent Application Publication No. 2000-100895
[發明所欲解決之課題][Problem to be solved by the invention]
然而,在以往的技術中,針對基板或基板載置部的中央一處進行吸引保持而使基板旋轉。因此,施加在吸引保持部的負荷大,在基板與吸引保持部之間可能產生偏移。However, in the conventional technology, the substrate or the center of the substrate placement portion is sucked and held to rotate the substrate. Therefore, a large load is applied to the suction and holding portion, which may cause misalignment between the substrate and the suction and holding portion.
本發明例如提供一種定位裝置,其有利於減少基板與吸引保持部之間的偏移。 [用於解決課題之手段] For example, the present invention provides a positioning device that is beneficial to reducing the deviation between the substrate and the suction holding part. [Means used to solve problems]
依本發明的第1方案時,提供一種定位裝置,具有:基板支撐部,其對基板的下表面噴出氣體而使前述基板浮起,從而以非接觸狀態支撐前述基板;複數個吸引保持部,其對被透過前述基板支撐部以非接觸狀態而支撐的前述基板的下表面進行吸引,從而限制往與基板表面平行的方向的前述基板的位移;支撐構件,其支撐前述複數個吸引保持部;以及旋轉機構,其使前述支撐構件繞與前述基板表面交叉的軸進行旋轉,從而在不使前述基板支撐部旋轉之下,經由前述複數個吸引保持部使前述基板旋轉。According to a first aspect of the present invention, there is provided a positioning device, which has: a substrate support portion that sprays gas against the lower surface of the substrate to float the substrate, thereby supporting the substrate in a non-contact state; and a plurality of suction and holding portions, It attracts the lower surface of the substrate supported in a non-contact state through the substrate support portion, thereby limiting the displacement of the substrate in a direction parallel to the substrate surface; a support member that supports the plurality of attraction and holding portions; and a rotation mechanism that rotates the support member around an axis intersecting the surface of the substrate to rotate the substrate via the plurality of suction and holding parts without rotating the substrate support part.
依本發明的第2方案時,提供一種光刻裝置,具備有關前述第1方案的定位裝置,被構成為對透過前述定位裝置進行了定位的基板轉印原版的圖案。According to a second aspect of the present invention, there is provided a photolithography apparatus, which is provided with the positioning device according to the first aspect, and is configured to transfer a pattern of a master plate to a substrate positioned by the positioning device.
依本發明的第3方案時,提供一種物品製造方法,具有:使用有關前述第2方案的光刻裝置而對基板轉印圖案的程序;以及將前述被轉印了圖案的基板進行加工的程序;從前述被進行了加工的基板製造物品。 [對照先前技術之功效] According to a third aspect of the present invention, there is provided an article manufacturing method, which includes: a process of transferring a pattern to a substrate using the photolithography apparatus of the second aspect; and a process of processing the substrate onto which the pattern has been transferred. ; Manufacturing articles from the aforementioned processed substrate. [Compare the effectiveness of previous technologies]
依本發明時,可提供一種定位裝置,其有利於減少基板與吸引保持部之間的偏移。According to the present invention, a positioning device can be provided, which is beneficial to reducing the deviation between the substrate and the suction and holding part.
以下,參照圖式詳細說明實施方式。另外,以下的實施方式非限定申請專利範圍的發明者。於實施方式雖記載複數個特徵,惟不限於此等複數個特徵的全部為發明必須者;此外,複數個特徵亦可任意進行組合。再者,圖式中,對相同或同樣的構成標注相同的參考符號,重複之說明省略。Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments do not limit the scope of the patent claims of the inventor. Although a plurality of features are described in the embodiments, it is not limited to the case where all of the features are necessary for the invention; in addition, the features may be combined arbitrarily. In addition, in the drawings, the same or identical components are denoted by the same reference symbols, and repeated explanations are omitted.
圖1為有關實施方式的曝光裝置1的示意圖。於本說明書及圖式,於使水平面為XY平面的XYZ座標系中表示方向。一般而言,是被曝光基板的基板W被以其表面與水平面(XY平面)成為平行的方式置於基板台5之上。因此,在以下,使在沿著基板W的表面之平面內彼此正交的方向為X軸及Y軸,使垂直於X軸及Y軸的方向為Z軸。此外,在以下,將分別平行於XYZ座標系中的X軸、Y軸、Z軸的方向稱為X方向、Y方向、Z方向,將繞X軸的旋轉方向、繞Y軸的旋轉方向、繞Z軸的旋轉方向分別稱為θx方向、θy方向、θz方向。FIG. 1 is a schematic diagram of the
<第1實施方式> 在實施方式中,針對基板的定位裝置被在將原版的圖案轉印到基板的光刻裝置(曝光裝置、壓印裝置等)中使用之例進行說明。壓印裝置,透過在使模具(原版)與供應到基板之上的壓印材接觸的狀態下使壓印材固化,從而在基板之上形成圖案。曝光裝置,經由是曝光遮罩的原版(倍縮光罩)對供應至基板之上的光阻進行曝光,從而在該光阻形成對應於原版的圖案之潛像。透過此等裝置處理的基板,例如可為矽晶圓,亦可為除此之外的玻璃基板、銅基板、樹脂基板、SiC基板、藍寶石基板等。以下,為了提供具體例,針對光刻裝置被構成為曝光裝置之例進行說明。 <First Embodiment> In the embodiment, an example will be described in which the positioning device of the substrate is used in a photolithography apparatus (exposure apparatus, imprint apparatus, etc.) that transfers a pattern of a master plate to a substrate. The imprint device forms a pattern on the substrate by solidifying the imprint material supplied to the substrate while the mold (original plate) is in contact with the imprint material. The exposure device exposes the photoresist supplied to the substrate through a master plate (reduction mask) that is an exposure mask, thereby forming a latent image corresponding to the pattern of the master plate on the photoresist. The substrate processed by these devices can be, for example, a silicon wafer, or other glass substrates, copper substrates, resin substrates, SiC substrates, sapphire substrates, etc. Hereinafter, in order to provide a specific example, an example in which the photolithography apparatus is configured as an exposure apparatus will be described.
(曝光裝置的構成)
圖1中,示意地示出應用本發明的定位裝置的曝光裝置1的構成。曝光裝置1為以下裝置:在是半導體裝置、液晶顯示裝置等的製程的光刻程序中,經由投影光學系統將形成於遮罩的圖案轉印到感光性的基板(例如,在表面形成有光阻層的玻璃板)。曝光裝置1,可具備光源單元L、照明光學系統2、支撐遮罩M(原版)的遮罩台3、投影光學系統4、支撐基板W的基板台5、檢測器19、控制部6。控制部6與光源單元L、遮罩台3、基板台5、檢測器19電連接,並對此等進行控制。控制部6,例如可由FPGA等的PLD、ASIC、嵌入有程式的通用電腦或者此等全部或一部分的組合而構成。例如,控制器6可包含處理器6以及記憶程式和資料的記憶體62。
(Construction of exposure device)
FIG. 1 schematically shows the structure of an
照明光學系統2使用來自光源單元L的光,對形成有轉印用的電路圖案的遮罩M進行照明。照明光學系統2可具有均勻地照明遮罩M的功能、變形照明功能。光源單元L例如使用雷射。雷射可使用波長約193nm的ArF準分子雷射、波長約248nm的KrF準分子雷射等,惟光源的種類不限於準分子雷射。例如,可使用波長約157nm的F2雷射、波長20nm以下的EUV (Extreme ultraviolet:遠紫外)光。The illumination
遮罩M例如為石英製,在其上形成應轉印的電路圖案,由遮罩台3支撐及驅動。從遮罩M發出的繞射光通過投影光學系統4,投影到基板W上。遮罩M和基板W被配置成光學上共軛的關係。透過以縮小倍率比的速度比掃描遮罩M和基板W,使得遮罩M的圖案被轉印到基板W上。The mask M is made of, for example, quartz, on which a circuit pattern to be transferred is formed, and is supported and driven by the mask table 3 . The diffracted light emitted from the mask M passes through the projection
遮罩台3透過未圖示的遮罩吸盤來支撐遮罩M,並與未圖示的移動機構連接。移動機構,被以線性馬達等構成,具有複數個自由度(例如X、Y、θz的3軸,優選上X、Y、Z、θx、θy、θz的6軸),透過驅動遮罩台3從而可使遮罩M移動。The masking table 3 supports the mask M through a mask suction cup (not shown) and is connected to a moving mechanism (not shown). The moving mechanism is composed of a linear motor or the like and has multiple degrees of freedom (for example, three axes of X, Y, and θz, preferably six axes of X, Y, Z, θx, θy, and θz), and drives the masking table 3 This allows the mask M to move.
投影光學系統4具有將來自物面的光束成像在像面上的功能,將經過形成在遮罩M上的圖案的繞射光成像在基板W上。投影光學系統4方面,可使用由複數個透鏡元件構成的光學系統、具有複數個透鏡元件和至少一枚凹面鏡的光學系統(反射折射光學系統)、具有複數個透鏡元件和至少一枚繞射結構(kinoform)等的繞射光學元件的光學系統等。The projection
基板台5具有複數個自由度(例如,X、Y、θz的3軸,優選上X、Y、Z、θx、θy、θz的6軸),使基板W移動。在本實施方式中,基板台5具備:驅動機構13,其使基板W在與基板表面平行的方向(XY方向)上移動;以及θ校正驅動機構14(旋轉機構),其進行基板W的繞與基板表面交叉的軸(例如Z軸)的旋轉(θ校正驅動)。基板台5,將基板W,在接收位置載置到基板載置部後,可一面透過驅動機構13在XY方向上予以移動至曝光開始位置,一面透過θ校正驅動機構14進行θ校正驅動。The
檢測器19檢測基板W的X、Y、θ的位置。在一例中,檢測器19可包含:對基板W的側面照射光的光照射部;以及檢測在基板W的側面反射的光的檢測部。如圖2A所示,檢測器19可配置複數個。控制部6基於各個檢測器19的檢測結果,求出基板W的X、Y、θ的位置。The
首先,說明以往的θ校正驅動的方法。以往,透過使保持了基板的基板載置部向θz方向旋轉來進行θ校正驅動。在θ校正驅動時,基板載置部透過來自氣墊的壓縮氣體的噴出而成為摩擦阻力減小的狀態或非接觸的狀態,該氣墊被構成於從下方支撐基板載置部的保持部的上表面。θ校正驅動後,將氣墊切換為吸引,基板載置部被保持部約束。以上的從θ校正驅動到基板載置部的約束為止的一連串動作,被與基板台的XY驅動以並行方式實施。First, the conventional θ correction drive method will be described. Conventionally, θ correction driving is performed by rotating the substrate mounting portion holding the substrate in the θz direction. During theta correction driving, the substrate placing portion is brought into a state of reduced frictional resistance or a non-contact state by the jet of compressed gas from an air cushion formed on the upper surface of the holding portion that supports the substrate placing portion from below. . After the θ correction drive, the air cushion is switched to suction, and the substrate placing part is restrained by the holding part. The above series of operations from the θ correction drive to the constraint of the substrate mounting portion are executed in parallel with the XY drive of the substrate stage.
然而,在基於氣墊的約束力(氣墊彼此的摩擦力)未達到透過XY驅動而產生的慣性力的狀態下基板台進行了XY驅動的情況下,由於慣性力使得基板載置部產生偏移。其結果,基板的對位精度降低,曝光性能可能降低。因此,在基板台向曝光開始位置移動後,需要等待透過了氣墊的完全約束的時間,此妨礙了產距時間的縮短。However, when the substrate stage is driven XY in a state where the binding force of the air cushion (the frictional force between the air cushions) does not reach the inertial force generated by the XY drive, the substrate mounting portion is deflected due to the inertial force. As a result, the positioning accuracy of the substrate decreases and the exposure performance may decrease. Therefore, after the substrate stage moves to the exposure start position, it is necessary to wait for the complete restraint by the air cushion, which hinders the shortening of the throughput time.
由於基板載置部的偏移是此問題的原因,因此考慮在基板載置部被保持部固定的狀態下使基板旋轉的對策。作為在基板台上對基板進行θ校正的技術,有在基板載置部的上側將基板吸附保持並予以旋轉的方法。然而,在以往的基板的θ校正的機構中,由於在中央一處吸附基板,因此施加在吸引保持部的負荷大,存在基板與吸引保持部之間產生偏移的風險。Since the deviation of the substrate placement portion is the cause of this problem, a countermeasure is considered to rotate the substrate while the substrate placement portion is fixed by the holding portion. As a technique for performing θ correction on a substrate on a substrate stage, there is a method of adsorbing and holding the substrate on the upper side of the substrate mounting portion and rotating the substrate. However, in the conventional mechanism for θ correction of the substrate, since the substrate is sucked at one central point, a large load is applied to the suction and holding part, and there is a risk of deviation between the substrate and the suction and holding part.
另外,由於以往的吸引保持部是單純地升降的機構,因此在θ校正驅動後基板載置部吸附基板時,基板會產生與吸引保持部從基板載置部突出的高度相應的形變。為了不在基板上殘留形變,需要如下步驟:基板載置部吸附基板,在使吸引保持部向基板載置部的下方驅動後,向基板整個下表面噴出壓縮氣體。然而,在實施施加壓縮氣體的步驟的期間,由於基板不受約束,因此當水平驅動基板台時,基板會跑開(沿水平方向移動)。In addition, since the conventional suction and holding part is a mechanism that simply moves up and down, when the substrate mounting part suctions the substrate after theta correction drive, the substrate will be deformed according to the height of the suction and holding part protruding from the substrate mounting part. In order to prevent deformation from remaining on the substrate, the following steps are required: the substrate mounting portion absorbs the substrate, drives the suction and holding portion downwards of the substrate mounting portion, and then blows the compressed gas to the entire lower surface of the substrate. However, since the substrate is not restrained during the step of applying the compressed gas, the substrate may run away (move in the horizontal direction) when the substrate stage is driven horizontally.
因此,在本實施方式中,使用如以下所示的機構來以並行方式實施基板台的XY驅動和基板的θ校正驅動,從而可縮短產距時間。Therefore, in this embodiment, the XY drive of the substrate stage and the θ correction drive of the substrate are implemented in parallel using a mechanism as shown below, so that the lead time can be shortened.
(θ校正驅動機構的構成)
圖2A為基板台5的平面圖(從Z方向上方觀看時的圖)。圖2B,為沿著示於圖2A的A-A線的截面圖(從X方向觀看時的截面圖),示出θ校正驅動機構14的構成。基板台5具有支撐基板W的基板支撐部7。基板支撐部7亦可以被稱為基板載置部或基板吸盤。基板支撐部7透過對基板W的下表面噴出氣體而使基板W浮起,從而能以非接觸狀態支撐基板W。基板支撐部7亦可進一步吸引基板W下方的氣體而以接觸狀態支撐基板W。控制部6可切換透過了基板支撐部7之基板W的非接觸支撐/接觸支撐。
(Construction of theta correction drive mechanism)
FIG. 2A is a plan view of the substrate stage 5 (viewed from above in the Z direction). FIG. 2B is a cross-sectional view along line A-A shown in FIG. 2A (a cross-sectional view when viewed from the X direction), showing the structure of the θ
在基板支撐部7,形成有貫穿上下表面的複數個孔28。複數個孔28與通路33連通。通路33與第1壓力調整部29連接。The
如圖2A所示,θ校正驅動機構14配置在基板支撐部7的下部。θ校正驅動機構14可包含複數個吸引保持部24。複數個吸引保持部24吸引由基板支撐部7以非接觸狀態支撐的基板W的下表面,限制基板W向與基板表面平行的方向(第1方向)(典型地為XY方向)的位移。複數個吸引保持部24由支撐構件23支撐。如後述,支撐構件23由旋轉部25支撐為可繞與基板表面交叉的軸旋轉。在圖2A、圖2B之例中,4個吸引保持部24配置在從支撐構件23的旋轉中心分離的位置。從旋轉中心分離的位置,可根據設置在基板支撐部7的中央的間隙的大小、基板的θ校正的必要驅動量等來決定。另外,吸引保持部24的數量,可相對於基板W的基板台17的XYθ驅動時的慣性力,由襯墊24g(圖3)與基板W的摩擦係數和真空源30的施加壓力來決定。在圖2A之例中,支撐構件23,可為在從上方觀看基板支撐部7時的俯視下通過基板支撐部7的中心並沿Y方向延伸的長形構件。As shown in FIG. 2A , the θ
於圖3,示出吸引保持部24的構成例。吸引保持部24具備:軸24d,其在Z方向上延伸;以及襯墊24g,其設置在軸24d的上端,為與基板W的下表面接觸的接觸構件。軸24d,為形成有用於經由襯墊24g進行基板W的真空吸引用的氣流路徑的中空構件,且為進行襯墊24g的上下移動的構件。軸24d可一邊被透過形成於保持器24f的導引部24e導引一邊在Z方向上自由地移動。軸24d(即襯墊24g)被透過致動器24a向+Z方向驅動。致動器24a可由氣缸、線性馬達、伺服馬達等構成。即使在襯墊24g被透過致動器24a驅動到可與基板W接觸的位置且襯墊24g被基板W吸附後致動器24a返回待機位置,襯墊24g亦可透過導引件24e的作用而繼續吸附在基板W上。此時,由於成為相對於基板W沒有來自吸引保持部24的按壓力的狀態,因此可在平滑度高的狀態下對基板W從θ校正驅動進行向基板支撐部7的載置、吸附。由此,襯墊24g可追隨於基板W向與基板表面交叉的方向(第2方向)(典型為Z方向)的位移而位移。FIG. 3 shows a structural example of the suction and holding
支撐複數個吸引保持部24的支撐構件23的中央,經由旋轉部25,與配置在支撐構件23的下方的固定構件18連結。透過旋轉部25,支撐構件23可相對於固定構件18在θz方向上旋轉。另外,固定構件18的端部與支撐構件23的端部經由θ驅動源15而連結。θ驅動源15向驅動方向21驅動支撐構件23,使得支撐構件23能以旋轉部25為旋轉中心而旋轉於θz方向。即,θ校正驅動,被透過θ驅動源15使支撐構件23相對於固定構件18旋轉從而進行。因此,可以理解為旋轉部25構成旋轉支撐部,由該旋轉支撐部與θ驅動源15構成旋轉部。The center of the
並且,在固定構件18的上表面配置有複數個氣墊22,在支撐構件23的下表面以與複數個氣墊22相面對的方式配置有複數個襯墊27。複數個氣墊22被構成為相對於支撐構件23的下表面(襯墊27)噴出氣體。並且,複數個氣墊22亦被構成為吸引支撐構件23之下的氣體而使氣墊22與襯墊27吸附。透過了如此之氣墊22的氣體的噴射或吸引,可透過控制部6進行切換。θ校正驅動,被在從氣墊22噴出壓縮氣體而使支撐構件23與氣墊22為非接觸狀態或者摩擦阻力減輕的狀態下進行。由於氣墊22的壓縮氣體的噴出和吸附動作,使得從固定構件18向上方構成的θ校正驅動機構14的構件在Z方向上移動,因此旋轉部25亦可被構成為可透過板簧等隨著如此之Z方向的移動而在Z方向上伸縮。由此防止了支撐構件23的變形。Furthermore, a plurality of
吸引保持部24的襯墊24g經由軸24d與真空泵等真空源30以氣體可流通的方式連接。在吸引保持部24支撐基板W時,透過真空源30進行氣體吸引(抽真空),襯墊24g可吸附於基板W的下表面。襯墊24g的上部(接觸部),優選為在與基板W接觸時仿照基板W的材質(例如樹脂)。The
第1壓力調整部29進行壓縮氣體向孔28的供應(噴出)、透過孔28與大氣空間(外部)的連接而實現的孔28的大氣壓恢復以及來自孔28的氣體的吸引中的任一者。此等動作可透過控制部6切換未圖示的電磁閥來進行。第1壓力調整部29透過吸引氣體而對基板W與基板支撐部7之間進行排氣,從而予以吸附基板W。可透過改變此時的氣體的吸引的強度,從而調整基板W的表面的平坦度。The
第2壓力調整部31進行壓縮氣體向氣墊22的供應(噴出)、透過氣墊22與大氣空間(外部)的連接而實現的氣墊22的大氣壓恢復以及來自氣墊22的氣體的吸引中的任一者。此等動作可透過控制部6切換未圖示的電磁閥來進行。The second
(關於基板的θ校正驅動方法)
針對透過了θ校正驅動機構14之基板W的θ校正驅動方法進行說明。θ校正驅動,透過控制部6執行按照圖4所示的流程圖的程式來進行。此外,圖5~圖9,分別為示出基板W的保持過程。在圖5~圖9,對與圖1、圖2A及圖2B相同的構件標注相同的符號,詳細的說明省略。
(About the theta correction driving method of the substrate)
The θ correction driving method of the substrate W having passed through the θ
在程式開始時,基板台5在基板接收位置處靜止。關於θ校正驅動機構14,襯墊24g位於基板支撐部7的上表面的下方,襯墊24g處於亦沒有吸附基板W的狀態(S101)。經由孔28向+Z方向噴出壓縮氣體(S102)。另外,氣墊22噴出壓縮氣體,為非接觸狀態或摩擦阻力減小的狀態。At the beginning of the program, the
在S103中,吸引保持部24的致動器24a將保持器24f向+Z方向推起,使得襯墊24g移動到比基板支撐部7上方。此時的襯墊24g的頂端或緣部的位置,為從孔28朝向基板W噴出的壓縮氣體的動壓發揮作用的高度,為能以來自孔28的壓縮氣體和吸引保持部24承受基板W的自重的位置。In S103, the
在S104中,在基板W被載置於襯墊24g之後,或在緊接著被載置之前,透過真空源30開始吸附襯墊24g上的基板W。由此,限制基板W向水平方向的位置偏移。圖5示出程序S104的結束時的樣子。In S104, after the substrate W is placed on the
在S105中,基板台5開始XY驅動。與此並行地,在S106中,檢測器19檢測基板W的X、Y、θ的位置。另外,在S107中,在襯墊24g吸附於基板W的狀態下,致動器24a向-Z方向驅動而移動到待機位置。此時,對基板W向+Z方向施加力,僅為來自孔28的壓縮氣體,基板W被吸附在襯墊24g上,因此不會產生水平方向的位置偏移。另外,基板W承受襯墊24g和軸24d的自重。致動器24a移動到待機位置,使得可減少從吸引保持部24受力而產生的基板W的形變。由於襯墊24g為仿照基板W的材質,襯墊24g的上部稍微伸縮,使得即使基板W在Z方向上稍微移動,仍可追隨。圖6為針對程序S107的結束時的樣子進行繪示的圖。In S105, the
在S108中,根據檢測器19的檢測結果來實施基板W的θ校正驅動。如上所述,θ校正驅動,被透過θ驅動源15在驅動方向21上驅動而以旋轉部25為中心旋轉來進行。在θ校正驅動的期間,在襯墊24g上,由於基板台5的XY驅動和θ校正驅動所引起的慣性力而可能產生水平方向的偏移。在本實施方式中,作為針對因該偏移導致θ校正精度降低的主要原因的對策,可將吸引保持部24配置在盡可能從旋轉中心分離的位置。由此,減輕了施加於旋轉部25的負荷。並且,透過將吸引保持部24配置在從旋轉中心分離的位置,θ校正驅動的分辨能力變得比旋轉中心附近高,可使因襯墊24g的變形而產生的偏移對θ校正精度造成的影響為微小或可忽略的水平。In S108, θ correction driving of the substrate W is performed based on the detection result of the
在S109中,第1壓力調整部29經由孔28而大氣開放。由此,供應到基板W的基板支撐部7的空氣經由孔28大致均勻地排出到大氣中。由此,基板W以平滑度高的狀態載置在基板支撐部7上。在基板W被載置在基板支撐部7時,基板W在-Z軸方向下降因壓縮氣體而浮起的高度。此時,吸附於基板W的襯墊24g隨著基板W的下降而一邊被導引件24e導引一邊下降。圖7示出程序S109的結束時的樣子。In S109, the first
接著,在S110中,第1壓力調整部29經由孔28開始抽真空,開始吸附基板W。在S110中,真空源30停止在襯墊24g的基板W的吸附。亦即,停止排氣動作。Next, in S110 , the first
在S111中,由於在S110中停止了排氣動作,因此襯墊24g在被導引件24e導引的同時向待機位置下降,直到襯墊24g由於襯墊24g和軸24d的自重而成為與保持器24f相同的高度。圖8示出程序S111的結束時的樣子。In S111, since the exhaust operation was stopped in S110, the
在程序S112中,利用第2壓力調整部31使襯墊22吸附於固定構件18。圖9示出程序S112的結束時的樣子。
如此般,在S108中的支撐構件23的旋轉結束後,在S110中基板支撐部7切換為接觸狀態下的基板的支撐,在S112中氣墊22切換為接觸狀態下的支撐構件23的支撐。
In step S112, the second
根據以上,基板W的θ校正驅動完畢。在S113中,利用基板台5使基板W向曝光開始位置移動。Based on the above, the θ correction drive of the substrate W is completed. In S113, the substrate W is moved to the exposure start position using the
如此般,在從旋轉中心分離的位置配置複數個吸引保持部24,在全部的吸引保持部24被一個支撐構件支撐的狀態下進行θ校正驅動。由此,即使在由基板台17的XY驅動所產生的慣性力存在作用的狀況下,仍可實現高精度的θ校正驅動。另外,可在基板上不殘留形變地執行上述的動作。In this way, the plurality of suction and holding
<第2實施方式>
於圖10,示出第2實施方式中的θ校正驅動機構14的構成。在第2實施方式的θ校正驅動機構14中,複數個吸引保持部24各自不具備致動器24a。取而代之,致動器32配置在固定構件23之上以使力作用於支撐構件23。致動器32透過使支撐構件23在Z方向上驅動而使複數個吸引保持部24分別升降。
<Second Embodiment>
FIG. 10 shows the structure of the θ
<第3實施方式>
曝光裝置1有時亦同時處理複數個基板。在該情況下,如圖11所示,基板台5亦可與各個基板相對應地具備複數個θ校正驅動機構14。
<3rd Embodiment>
The
<第4實施方式>
在圖2A中,支撐構件23示出為在從上方觀看基板支撐部7時的俯視下通過基板支撐部7的中心且沿Y方向延伸的長形構件。然而,支撐構件23延伸的方向不限定於Y方向。支撐構件23延伸的方向,例如亦可根據基板W的曝光布局、形狀來設定。
<4th Embodiment>
In FIG. 2A , the
另外,支撐構件23亦不限定於長形的矩形形狀。支撐構件23例如亦可具有放射狀、格子狀、圓形狀等的形狀。In addition, the
<其他實施方式>
亦可無第1實施方式中的致動器24a或第2實施方式中的致動器32。例如,亦可以採用如下構成:使襯墊24g的初始位置盡可能地接近基板支撐部7的上表面,透過真空源30的真空壓力使襯墊24g上升而吸附在基板W上。
<Other embodiments>
The
<物品製造方法的實施方式> 本發明的實施方式中的物品製造方法,例如適於製造半導體裝置等的微型裝置、具有微細構造的元件等的物品。本實施方式的物品製造方法,包含:使用上述的光刻裝置(曝光裝置、壓印裝置、描繪裝置等)對基板轉印原版的圖案的程序;以及將在該程序轉印了圖案的基板進行加工的程序。再者,該製造方法包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。本實施方式的物品製造方法,比起歷來的方法,有利於物品的性能、品質、生產性、生產成本中的至少一者。 <Embodiment of article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method of this embodiment includes: a process of transferring a pattern of an original plate to a substrate using the above-mentioned photolithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.); and performing a process on the substrate to which the pattern has been transferred by the process. Processing procedures. Furthermore, the manufacturing method includes other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, cutting, bonding, packaging, etc.). The article manufacturing method of this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.
發明不限於前述實施方式,在不背離發明的精神及範圍內,可進行各種的變更及變形。因此,撰寫申請專利範圍以公開發明的範圍。The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the patent application is drafted to disclose the scope of the invention.
7:基板支撐部 14:θ校正驅動機構 23:支撐構件 24:吸引保持部 25:旋轉部 7:Substrate support part 14:θ correction drive mechanism 23:Supporting members 24:Attraction and retention department 25:Rotation part
[圖1]針對曝光裝置的構成進行繪示的圖。 [圖2A]基板台的平面圖。 [圖2B]針對θ校正驅動機構的構成進行繪示的圖。 [圖3]針對吸引保持部的構成進行繪示的圖。 [圖4]針對θ校正驅動方法進行繪示的流程圖。 [圖5]針對θ校正驅動中的控制狀態進行繪示的圖。 [圖6]針對θ校正驅動中的控制狀態進行繪示的圖。 [圖7]針對θ校正驅動中的控制狀態進行繪示的圖。 [圖8]針對θ校正驅動中的控制狀態進行繪示的圖。 [圖9]針對θ校正驅動中的控制狀態進行繪示的圖。 [圖10]針對θ校正驅動機構的構成進行繪示的圖。 [圖11]針對具備複數個θ校正驅動機構的構成進行繪示的圖。 [Fig. 1] A diagram illustrating the structure of an exposure device. [Fig. 2A] Plan view of the substrate stage. [Fig. 2B] A diagram illustrating the structure of the θ correction drive mechanism. [Fig. 3] A diagram illustrating the structure of the suction and holding portion. [Fig. 4] A flowchart illustrating the θ correction driving method. [Fig. 5] A diagram illustrating the control state in theta correction drive. [Fig. 6] A diagram illustrating the control state in theta correction drive. [Fig. 7] A diagram illustrating the control state in theta correction drive. [Fig. 8] A diagram illustrating the control state in theta correction drive. [Fig. 9] A diagram illustrating the control state in theta correction drive. [Fig. 10] A diagram illustrating the structure of the θ correction drive mechanism. [Fig. 11] A diagram illustrating a structure including a plurality of θ correction drive mechanisms.
7:基板支撐部 7:Substrate support part
15:θ驅動源 15:θ drive source
18:固定構件 18: Fixed components
22:氣墊 22: Air cushion
23:支撐構件 23:Supporting members
24:吸引保持部 24:Attraction and retention department
25:旋轉部 25:Rotation part
27:襯墊 27:Padding
28:孔 28:hole
29:第1壓力調整部 29: 1st pressure adjustment section
30:真空源 30:Vacuum source
31:第2壓力調整部 31: 2nd pressure adjustment section
33:通路 33:Pathway
Claims (12)
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